8 results on '"Voelskow, M."'
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2. Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields
3. The influence of the implantation sequence on the (SiC)1−x(AlN)xformation
4. Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements
5. A novel (SiC)~1~-~x(AIN)~x compound synthesized using ion beams
6. Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi~2
7. Ion beam synthesis by tungsten-implantation into 6H-silicon carbide
8. Radiation damage and annealing behaviour of Ge^+-implanted SiC
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