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The SEE susceptibility on 28 nm Xilinx Zynq-7020 All Programmable SoC was investigated at heavy ion microbeam facilities in Institute of Modern Physics (IMP). The sensitive SEE spots distribution in entire PS area was obtained by running the on chip memory (OCM) test program. The extracted chip bottom modules layout information indicated that the SEE sensitive events occurred in the OCM area, central data processing area, and interfaces controlling buffer registers elements area, accounting for 19.6%, 32.6% and 47.8%, respectively. The results showed it was possible that the SEE events in other areas appeared more serious than in the target block located area. Meanwhile, the partial cross section was gotten in the test and it was (5.75 ± 0.85) × 10−5 cm2. [ABSTRACT FROM AUTHOR]

Abstract: Single Event Effects (SEEs) triggered by energetic heavy ions traversing a sensitive parts of electric devices have been studied using high-energy heavy ion microbeams connected with Transient Ion Beam Induced Current (TIBIC) measuring system at the Japan Atomic Energy Agency (JAEA) Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In the TIBIC system, SEE for semiconductor device, that is fast charge collection, has been observed in timescales of the order of picoseconds. In this paper, we show successful demonstration of the performance of the system, in which clear images of TIBIC map have been observed for Si pin photodiodes irradiated by 260MeV 20Ne7+ and also by 520MeV 40Ar14+ microbeams. [Copyright &y& Elsevier]