Search

This paper presents the measurement of the spatial and temporal resolutions of a Resistive Silicon Detector (RSD) pixel matrix read out by the FAST2 ASIC, a 16-channel fully custom amplifier developed by INFN Torino using a 110 nm CMOS technology. The test was performed at the DESY test beam facility with a 5 GeV/c electron beam. The RSD matrix is composed of seven 450 μ m pitch pixels with cross-shaped electrodes for a total area of about 1.5 mm 2. The position resolution reached is σ x = 14 ± 1 μ m , approximately 3.5% of the pitch, and the temporal resolution is σ t = 49 ± 6 ps. The work demonstrates that RSD sensors with cross-shaped electrodes achieve 100% fill factor and homogeneous resolutions over the whole matrix surface, making them a suitable choice for 4D tracking applications. [ABSTRACT FROM AUTHOR]

This paper summarizes the beam test results obtained with a Resistive Silicon Detector (RSD) (also called AC-Low Gain Avalanche Diode, AC-LGAD) pixel array tested at the DESY beam test facility with a 5 GeV/c electron beam. Furthermore, it describes in detail the simulation results of DC-RSD, an evolution of the RSD design. The simulations campaign described in this paper has been instrumental in the definition of the structures implemented in the Fondazione Bruno Kessler FBK first DC-RSD production. The RSD matrix used in this study is part of the second FBK RSD production, RSD2. The best position resolution reached in this test is σ x = 15 μ m, about 3.4% of the pitch. DC-RSD LGAD, are an evolution of the AC-coupled design, eliminating the dielectric and using a DC-coupling to the electronics. The concept of DC-RSD has been finalized using full 3D Technology-CAD simulations of the sensor behavior. TCAD simulations are an excellent tool for designing this innovative class of detectors, enabling the evaluation of different technology options (e.g., the resistivity of the n + layer, contact materials) and geometrical layouts (shape and distance of the read-out pads). [ABSTRACT FROM AUTHOR]

Abstract The combination of precision space and time information in particle tracking, the so called 4D tracking, is being considered in the upgrade of the ATLAS, CMS and LHCb experiments at the High-Luminosity LHC, set to start data taking in 2024–2025. Regardless of the type of solution chosen, space–time tracking brings benefits to the performance of the detectors by reducing the background and sharpening the resolution; it improves tracking performances and simplifies tracks combinatorics. Space–time tracking also allows investigating new physics channels, for example it opens up the possibilities of new searches in long-living particles by measuring accurately the time of flight between the production and the decay vertexes. The foreseen applications of 4D tracking in experiments with very high acquisition rates, for example at HL-LHC, add one more dimension to the problem, increasing dramatically the complexity of the read-out system and that of the whole detector design: we call 5D tracking the application of 4D tracking in high rate environments. [ABSTRACT FROM AUTHOR]

Abstract Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 μ m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of ϕ ∼ 1015 n e q /cm 2. In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production. [ABSTRACT FROM AUTHOR]

Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors. [ABSTRACT FROM AUTHOR]

The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentation. Albeit introduced for a different reason, to compensate for charge trapping in irradiated silicon sensors, LGAD found fertile ground in the design of silicon-based timing detectors. Spurred by this design innovation, solid-state-based timing detectors for charged particles are going through an intense phase of R&D, and hybrid and monolithic sensors, with or without internal gain, are being explored. This contribution offers a review of this booming field. [ABSTRACT FROM AUTHOR]

Several future high-energy physics facilities are currently being planned. The proposed projects include high energy e + e − circular and linear colliders, hadron colliders, and muon colliders, while the Electron–Ion Collider (EIC) is expected to construct at the Brookhaven National Laboratory in the future. Each proposal has its advantages and disadvantages in terms of readiness, cost, schedule, and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances necessary for future silicon tracking systems at the various new facilities. Then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog read-out are exploited to meet these new demands. [ABSTRACT FROM AUTHOR]

In the past few years, there has been growing interest in the development of silicon sensors able to simultaneously measure accurately the time of passage and the position of impinging charged particles. In this contribution, a review of the progresses in the design of UFSD (Ultra-Fast Silicon Detectors) sensors, manufactured at the FBK (Fondazione Bruno Kessler) Foundry, aiming at tracking charged particles in 4 dimensions, is presented. The state-of-the-art UFSD sensors, with excellent timing capability, are planned to be used in both ATLAS and CMS experiments detector upgrade, in order to reduce the background due to the presence of overlapping events in the same bunch crossing. The latest results on sensors characterization including time resolution, radiation resistance and uniformity of the response are here summarized, pointing out the interplay between the design of the gain layer and the UFSD performances. The research is now focusing on the maximization of the sensor fill factor, to be able to reduce the pixel size, exploring the implementation of shallow trenches for the pixel isolation and the development of resistive AC-coupled UFSD sensors. In conclusion, a brief review on research paths tailored for detection of low energy X-rays or for low material budget applications is given. [ABSTRACT FROM AUTHOR]