1. Characterization of thin p-on-p radiation detectors with active edges.
- Author
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Peltola, T., Wu, X., Kalliopuska, J., Granja, C., Jakubek, J., Jakubek, M., Härkönen, J., and Gädda, A.
- Subjects
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NUCLEAR counters , *PARTICLE scattering functions , *DETECTION alarms , *NUCLEAR energy , *NUCLEAR physics , *PHYSICS instruments - Abstract
Active edge p-on-p silicon pixel detectors with thickness of 100 μ m were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 μ m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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