1. A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion.
- Author
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Ratti, L., Comotti, D., Fabris, L., Grassi, M., Lodola, L., Malcovati, P., Manghisoni, M., Re, V., Traversi, G., Vacchi, C., Rizzo, G., Batignani, G., Bettarini, S., Casarosa, G., Forti, F., Giorgi, M., Morsani, F., Paladino, A., Paoloni, E., and Pancheri, L.
- Subjects
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X-ray imaging , *PIXELS , *SIGNAL processing , *X-ray diffraction , *COMPLEMENTARY metal oxide semiconductors , *SIGNAL-to-noise ratio - Abstract
A readout channel for applications to X-ray diffraction imaging at free electron lasers has been developed in a 65 nm CMOS technology. The analog front-end circuit can achieve an input dynamic range of 100 dB by leveraging a novel signal compression technique based on the non-linear features of MOS capacitors. Trapezoidal shaping is accomplished through a transconductor and a switched capacitor circuit, performing gated integration and correlated double sampling. A small area, low power 10 bit successive approximation register (SAR) ADC, operated in a time-interleaved fashion, is used for numerical conversion of the amplitude measurement. Operation at 5 MHz of the analog channel including the shaper was demonstrated. Also, the channel was found to be compliant with single 1 keV photon resolution at 1.25 MHz. The ADC provides a signal-to-noise ratio (SNR) of 56 dB, corresponding to an equivalent number of bits (ENOB) of 9 bits, and a differential non linearity DNL < 1 LSB at a sampling rate slightly larger than 1.8 MHz. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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