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Start Over Author "Yu, Zhihao" Journal nature communications
6 results on '"Yu, Zhihao"'

1. Low-defect-density WS2 by hydroxide vapor phase deposition

Author

Wan, Yi, Li, En, Yu, Zhihao, Huang, Jing-Kai, Li, Ming-Yang, Chou, Ang-Sheng, Lee, Yi-Te, Lee, Chien-Ju, Hsu, Hung-Chang, Zhan, Qin, Aljarb, Areej, Fu, Jui-Han, Chiu, Shao-Pin, Wang, Xinran, Lin, Juhn-Jong, Chiu, Ya-Ping, Chang, Wen-Hao, Wang, Han, Shi, Yumeng, Lin, Nian, Cheng, Yingchun, Tung, Vincent, and Li, Lain-Jong

Published
2022
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2. Sub-thermionic, ultra-high-gain organic transistors and circuits

Author

Luo, Zhongzhong, Peng, Boyu, Zeng, Junpeng, Yu, Zhihao, Zhao, Ying, Xie, Jun, Lan, Rongfang, Ma, Zhong, Pan, Lijia, Cao, Ke, Lu, Yang, He, Daowei, Ning, Hongkai, Meng, Wanqing, Yang, Yang, Chen, Xiaoqing, Li, Weisheng, Wang, Jiawei, Pan, Danfeng, Tu, Xuecou, Huo, Wenxing, Huang, Xian, Shi, Dongquan, Li, Ling, Liu, Ming, Shi, Yi, Feng, Xue, Chan, Paddy K. L., and Wang, Xinran

Published
2021
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3. Low-defect-density WS2 by hydroxide vapor phase deposition.

Author

Wan, Yi, Li, En, Yu, Zhihao, Huang, Jing-Kai, Li, Ming-Yang, Chou, Ang-Sheng, Lee, Yi-Te, Lee, Chien-Ju, Hsu, Hung-Chang, Zhan, Qin, Aljarb, Areej, Fu, Jui-Han, Chiu, Shao-Pin, Wang, Xinran, Lin, Juhn-Jong, Chiu, Ya-Ping, Chang, Wen-Hao, Wang, Han, Shi, Yumeng, and Lin, Nian

Subjects
VAPOR-plating, CHEMICAL vapor deposition, MOORE'S law, HYDROXIDES, ELECTRON mobility, SEMICONDUCTOR defects
Abstract

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS2 with reduced defect density and electrical properties comparable to those of exfoliated flakes. [ABSTRACT FROM AUTHOR]

Published
2022
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4. Author Correction: Ultrafast probes of electron–hole transitions between two atomic layers

Author

Wen, Xiewen, primary, Chen, Hailong, additional, Wu, Tianmin, additional, Yu, Zhihao, additional, Yang, Qirong, additional, Deng, Jingwen, additional, Liu, Zhengtang, additional, Guo, Xin, additional, Guan, Jianxin, additional, Zhang, Xiang, additional, Gong, Yongji, additional, Yuan, Jiangtan, additional, Zhang, Zhuhua, additional, Yi, Chongyue, additional, Guo, Xuefeng, additional, Ajayan, Pulickel M., additional, Zhuang, Wei, additional, Liu, Zhirong, additional, Lou, Jun, additional, and Zheng, Junrong, additional

Published
2018
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5. Ultrafast probes of electron–hole transitions between two atomic layers

Author

Wen, Xiewen, primary, Chen, Hailong, additional, Wu, Tianmin, additional, Yu, Zhihao, additional, Yang, Qirong, additional, Deng, Jingwen, additional, Liu, Zhengtang, additional, Guo, Xin, additional, Guan, Jianxin, additional, Zhang, Xiang, additional, Gong, Yongji, additional, Yuan, Jiangtan, additional, Zhang, Zhuhua, additional, Yi, Chongyue, additional, Guo, Xuefeng, additional, Ajayan, Pulickel M., additional, Zhuang, Wei, additional, Liu, Zhirong, additional, Lou, Jun, additional, and Zheng, Junrong, additional

Published
2018
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6. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Author

Yu, Zhihao, primary, Pan, Yiming, additional, Shen, Yuting, additional, Wang, Zilu, additional, Ong, Zhun-Yong, additional, Xu, Tao, additional, Xin, Run, additional, Pan, Lijia, additional, Wang, Baigeng, additional, Sun, Litao, additional, Wang, Jinlan, additional, Zhang, Gang, additional, Zhang, Yong Wei, additional, Shi, Yi, additional, and Wang, Xinran, additional

Published
2014
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