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In recent years, spin-orbit effects have been widely used to produce and detect spin currents in spintronic devices. The peculiar symmetry of the spin Hall effect allows creation of a spin accumulation at the interface between a metal with strong spin-orbit interaction and a magnetic insulator, which can lead to a net pure spin current flowing from the metal into the insulator. This spin current applies a torque on the magnetization, which can eventually be driven into steady motion. Tailoring this experiment on extended films has proven to be elusive, probably due to mode competition. This requires the reduction of both the thickness and lateral size to reach full damping compensation. Here we show clear evidence of coherent spin-orbit torque-induced auto-oscillation in micron-sized yttrium iron garnet discs of thickness 20 nm. Our results emphasize the key role of quasi-degenerate spin-wave modes, which increase the threshold current.

Repeatable magnetization reversal under purely electrical control remains the outstanding goal in magnetoelectrics. Here we use magnetic force microscopy to study a commercially manufactured multilayer capacitor that displays strain-mediated coupling between magnetostrictive Ni electrodes and piezoelectric BaTiO(3)-based dielectric layers. In an electrode exposed by polishing approximately normal to the layers, we find a perpendicularly magnetized feature that exhibits non-volatile electrically driven repeatable magnetization reversal with no applied magnetic field. Using micromagnetic modelling, we interpret this nominally full magnetization reversal in terms of a dynamic precession that is triggered by strain from voltage-driven ferroelectric switching that is fast and reversible. The anisotropy field responsible for the perpendicular magnetization is reversed by the electrically driven magnetic switching, which is, therefore, repeatable. Our demonstration of non-volatile magnetic switching via volatile ferroelectric switching may inspire the design of fatigue-free devices for electric-write magnetic-read data storage.

Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6-2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes.