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Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density., Main Text (4 Figures), Supplementary notes (4 Figures)

Electrons in conventional metals become less mobile under the influence of electron correlation. Contrary to this empirical knowledge, we report here that electrons with the highest mobility ever found in known bulk oxide semiconductors emerge in the strong-correlation regime of the Dirac semimetal of perovskite CaIrO3. The transport measurements reveal that the high mobility exceeding 60,000 cm2V−1s−1 originates from the proximity of the Fermi energy to the Dirac node (ΔE, Electron correlation normally makes electrons less mobile, but it is still not clear when correlation becomes very strong in Dirac semimetals. Here, Fujioka et al. report a very high electron mobility exceeding 60,000 cm2V−1s−1 in correlated Dirac semimetal of perovskite CaIrO3, due to the enhanced electron correlation nearby the Mott transition.

The helical Dirac fermions on the surface of topological insulators host novel relativistic quantum phenomena in solids. Manipulating spins of topological surface state (TSS) represents an essential step towards exploring the theoretically predicted exotic states related to time reversal symmetry (TRS) breaking via magnetism or magnetic field. Understanding Zeeman effect of TSS and determining its g-factor are pivotal for such manipulations in the latter form of TRS breaking. Here, we report those direct experimental observations in Bi2Se3 and Sb2Te2Se by spectroscopic imaging scanning tunneling microscopy. The Zeeman shifting of zero mode Landau level is identified unambiguously by judiciously excluding the extrinsic influences associated with the non-linearity in the TSS band dispersion and the spatially varying potential. The g-factors of TSS in Bi2Se3 and Sb2Te2Se are determined to be 18 and -6, respectively. This remarkable material dependence opens a new route to control the spins in the TSS., main text: 17 pages, 4 figures; supplementary: 15 pages, 7 figures