Search

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler–Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.Layered thio- and seleno-phosphate ferroelectrics show promise for next-generation memory but have thermal stability issues. Using the electric field-driven phase transition in antiferroelectric CuCrP2S6, the authors introduce a robust memristor, emphasizing the potential of van der Waals antiferroelectrics in advanced neuromorphic computing. [ABSTRACT FROM AUTHOR]

Correction to: I Nature Communications i https://doi.org/10.1038/s41467-022-34062-6, published online 25 October 2022 In this article the affiliation 'Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore'. for Jie Yin should be removed. The affiliation 'Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, Singapore' for Kui Yao should read "Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore". [Extracted from the article]