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Crosstalk has become an urgent issue for single-photon avalanche diode arrays. In previous work, trenches were introduced between pixels to block the crosstalk optical path in planar InGaAs/InP single-photon avalanche diode arrays, since the optical crosstalk was considered as the main crosstalk mechanism. However, the crosstalk suppression effect of this solution is not satisfactory. Here, we demonstrate a carrier extraction structure to efficiently reduce crosstalk by electrically guiding photogenerated crosstalk holes in the non-pixel region to the surface, since we find that the optical-electrical crosstalk is the dominant crosstalk mechanism. Experimental measurements show that a narrow carrier extraction structure makes a 91.52% (96.22%) crosstalk reduction between the nearest neighbor pixels in arrays with 100 (50) μm pixel pitch, and it does not cause any etching damage. These results reveal the primary source of crosstalk in InGaAs/InP single-photon avalanche diode arrays and provide a practical route to fabricate low-crosstalk, high-pixel-density arrays for use in high-resolution three-dimensional imaging and quantum technologies.Opticalelectrical crosstalk, rather than optical crosstalk, is the primary issue in InGaAs/InP single-photon avalanche diode arrays. Here, Tang et al. propose a carrier-extraction structures to replace the trenching method, effectively reducing crosstalk and maintaining device reliability. [ABSTRACT FROM AUTHOR]

Image sensors capable of capturing individual photons have made tremendous progress in recent years. However, this technology faces a major limitation. Because they capture scene information at the individual photon level, the raw data is sparse and noisy. Here we propose CASPI: Collaborative Photon Processing for Active Single-Photon Imaging, a technology-agnostic, application-agnostic, and training-free photon processing pipeline for emerging high-resolution single-photon cameras. By collaboratively exploiting both local and non-local correlations in the spatio-temporal photon data cubes, CASPI estimates scene properties reliably even under very challenging lighting conditions. We demonstrate the versatility of CASPI with two applications: LiDAR imaging over a wide range of photon flux levels, from a sub-photon to high ambient regimes, and live-cell autofluorescence FLIM in low photon count regimes. We envision CASPI as a basic building block of general-purpose photon processing units that will be implemented on-chip in future single-photon cameras. The sparse, noisy, and distorted raw photon data captured by single-photon cameras make it difficult to estimate scene properties under challenging illumination conditions. Here, the authors present Collaborative photon processing for Active Single-Photon Imaging (CASPI), a technology-agnostic, application-agnostic, and training-free photon processing pipeline for high-resolution single-photon cameras. [ABSTRACT FROM AUTHOR]

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al2O3/Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes. The limited recovery speed of the single-photon avalanche diodes due to the passive resistor in series strongly reduces the detector's frequency response. Here Zheng et al., overcome this problem by using an adaptive resistive switch and reaching an avalanche pulse width as small as 30 ns. [ABSTRACT FROM AUTHOR]

Soft bioelectronic devices provide new opportunities for next-generation implantable devices owing to their soft mechanical nature that leads to minimal tissue damages and immune responses. However, a soft form of the implantable optoelectronic device for optical sensing and retinal stimulation has not been developed yet because of the bulkiness and rigidity of conventional imaging modules and their composing materials. Here, we describe a highdensity and hemispherically curved image sensor array that leverages the atomically thin MoS2-graphene heterostructure and strain-releasing device designs. The hemispherically curved image sensor array exhibits infrared blindness and successfully acquires pixelated optical signals. We corroborate the validity of the proposed soft materials and ultrathin device designs through theoretical modeling and finite element analysis. Then, we propose the ultrathin hemispherically curved image sensor array as a promising imaging element in the soft retinal implant. The CurvIS array is applied as a human eye-inspired soft implantable optoelectronic device that can detect optical signals and apply programmed electrical stimulation to optic nerves with minimum mechanical side effects to the retina. [ABSTRACT FROM AUTHOR]

Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5- fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range. [ABSTRACT FROM AUTHOR]

Electrically driven molecular light emitters are considered to be one of the promising candidates as single-photon sources. However, it is yet to be demonstrated that electrically driven single-photon emission can indeed be generated from an isolated single molecule notwithstanding fluorescence quenching and technical challenges. Here, we report such electrically driven single-photon emission from a well-defined single molecule located inside a precisely controlled nanocavity in a scanning tunneling microscope. The effective quenching suppression and nanocavity plasmonic enhancement allow us to achieve intense and stable single-molecule electroluminescence. Second-order photon correlation measurements reveal an evident photon antibunching dip with the single-photon purity down to g(2)(0) = 0.09, unambiguously confirming the single-photon emission nature of the single-molecule electroluminescence. Furthermore, we demonstrate an ultrahigh-density array of identical single-photon emitters. [ABSTRACT FROM AUTHOR]

Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications. By incorporating germanium, single-photon avalanche diode detectors using silicon-based platforms are applied to infrared light detection. Here, a cost-effective planar detector geometry is presented yielding high detection efficiency suitable for applications such as sparse photon imaging or LIDAR. [ABSTRACT FROM AUTHOR]

Despite advances in low-light-level detection, single-photon methods such as photon correlation have rarely been used in the context of imaging. The few demonstrations, for example of subdiffraction-limited imaging utilizing quantum statistics of photons, have remained in the realm of proof-of-principle demonstrations. This is primarily due to a combination of low values of fill factors, quantum efficiencies, frame rates and signal-to-noise characteristic of most available single-photon sensitive imaging detectors. Here we describe an imaging device based on a fibre bundle coupled to single-photon avalanche detectors that combines a large fill factor, a high quantum efficiency, a low noise and scalable architecture. Our device enables localization-based super-resolution microscopy in a non-sparse non-stationary scene, utilizing information on the number of active emitters, as gathered from non-classical photon statistics. [ABSTRACT FROM AUTHOR]