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Biotite, an iron-rich mineral belonging to the trioctahedral mica group, is a naturally abundant layered material (LM) exhibiting attractive electronic properties for application in nanodevices. Biotite stands out as a non-degradable LM under ambient conditions, featuring high-quality basal cleavage—a significant advantage for van der Waals heterostructure (vdWH) applications. In this work, we present the micro-mechanical exfoliation of biotite down to monolayers (1Ls), yielding ultrathin flakes with large areas and atomically flat surfaces. To identify and characterize the mineral, we conducted a multi-elemental analysis of biotite using energy-dispersive spectroscopy mapping. Additionally, synchrotron x-ray fluorescence and infrared nano-spectroscopy were employed to probe its iron content and vibrational signature in few-layer form, respectively, with sensitivity to the layer number. We have also observed good morphological and structural stability in time (up to 12 months) and no important changes in their physical properties after thermal annealing processes in ultrathin biotite flakes. Conductive atomic force microscopy evaluated its electrical capacity, revealing an electrical breakdown strength of approximately 1 V nm−1. Finally, we explore the use of biotite as a substrate and encapsulating LM in vdWH applications. We have performed optical and magneto-optical measurements at low temperatures. We find that ultrathin biotite flakes work as a good substrate for 1L-MoSe2, comparable to hexagonal boron nitride flakes, but it induces a small change of the 1L-MoSe2 g -factor values, most likely due to natural impurities on its crystal structure. Furthermore, our results show that biotite flakes are useful systems to protect sensitive LMs such as black phosphorus from degradation for up to 60 days in ambient air. Our study introduces biotite as a promising, cost-effective LM for the advancement of future ultrathin nanotechnologies. [ABSTRACT FROM AUTHOR]

Strain built-in electronic and optoelectronic devices can influence their properties and lifetime. This effect is particularly significant at the interface between two-dimensional materials and substrates. One such material is epitaxial hexagonal boron nitride (h-BN), which is grown at temperatures often exceeding 1000 °C. Due to the high growth temperature, h-BN based devices operating at room temperature can be strongly affected by strain generated during cooling due to the differences in lattice thermal expansion of h-BN and the substrate. Here, we present results of temperature-dependent Raman studies of the in-plane E2ghigh phonon mode in the temperature range of 300–1100 K measured for h-BN grown by metalorganic vapor phase epitaxy. We observe a change, by an order of magnitude, in the rate of the temperature-induced frequency shift for temperatures below 900 K, indicating a strong reduction of the effective h-BN/substrate interaction. We attribute this behavior to the creation of h-BN wrinkles which results in strain relaxation. This interpretation is supported by the observation that no change of layer/substrate interaction and no wrinkles are observed for delaminated h-BN films transferred onto silicon. Our findings demonstrate that wrinkle formation is an inherent process for two-dimensional materials on foreign substrates that has to be understood to allow for the successful engineering of devices based on epitaxially grown van der Waals heterostructures. [ABSTRACT FROM AUTHOR]

The growing demand for self-powered systems and the slow progress in energy storage devices have led to the emergence of piezoelectric materials as a promising solution for energy harvesting. This study aims to investigate the effects of chirality, length, and strain rate on the piezoelectric potential of boron nitride nanotubes (BNNTs) through molecular dynamics simulation. Accurate data and guidance are provided to explain the piezoelectricity of chiral nanotubes, as the piezoelectric potentials of these nanotubes have previously remained unclear. The present study focuses on calculating the effect of these parameters based on the atomic model. The observed results stem from the frequencies and internal deformations, as the axial frequencies and deformations exhibit more substantial modifications compared to transverse directions. The piezoelectricity was found to depend on chirality, with the order of BNNT piezoelectricity sufficiency being in the sequence of zigzag > chirality > armchair configurations. The length of the BNNTs was also found to influence piezoelectricity, while the strain rate had no effect. The results also indicate that BNNTs can generate power in the milliwatts range, which is adequate for low-power electronic devices and Internet of Things applications. This research provides valuable insights into the piezoelectricity of chiral nanotubes and offers guidance for designing efficient energy harvesting devices. [ABSTRACT FROM AUTHOR]

Nanomaterials can provide unique solutions for the problems experienced in tissue engineering by improving a scaffold's physico-bio-chemical properties. With its piezoelectric property, bone is an active tissue with easy adaptation and remodeling through complicated mechanisms of electromechanical operations. Although poly(ε -caprolactone) (PCL) is an excellent polymer for bone tissue engineering, it is lack of conductivity. In this study, piezoelectric barium titanates (BaTiO3) and boron nitride nanotubes (BNNTs) are used as ultrasound (US) stimulated piezoelectric components in PCL to mimic piezoelectric nature of bone tissue. Electric-responsive Human Osteoblast cells on the scaffolds were stimulated by applying low-frequency US during cell growth. Biocompatibility, cell adhesion, alkaline phosphatase activities and mineralization of osteoblast cells on piezo-composite scaffolds were investigated. BaTiO3 or BNNTs as reinforcement agents improved physical and mechanical properties of PCL scaffolds. In vitro studies show that the use of BaTiO3 or BNNTs as additives in non-conductive scaffolds significantly induces and increases the osteogenic activities even without US stimulation. Although BaTiO3 is one of the best piezoelectric materials, the improvement is more dramatic in the case of BNNTs with the increased mineralization, and excellent chemical and mechanical properties. [ABSTRACT FROM AUTHOR]

Reliable and controllable growth of two-dimensional (2D) hexagonal boron nitride (h-BN) is essential for its wide range of applications. Substrate engineering is one of the critical factors that influence the growth of the epitaxial h-BN films. Here, we report the growth of monolayer h-BN on Ni (111) substrates incorporated with oxygen atoms via molecular beam epitaxy. It was found that the increase of incorporated oxygen concentration in the Ni substrate through a pretreatment process prior to the h-BN growth step would have an adverse effect on the morphology and growth rate of 2D h-BN. Under the same growth condition, h-BN monolayer coverage decreases exponentially as the amount of oxygen incorporated into Ni (111) increases. Density functional theory calculations and climbing image nudged elastic band (CI-NEB) method reveal that the substitutional oxygen atoms can increase the diffusion energy barrier of B and N atoms on Ni (111) thereby inhibiting the growth of h-BN films. As-grown large-area h-BN monolayer films and fabricated Al/h-BN/Ni (MIM) nanodevices were comprehensively characterized to evaluate the structural, optical and electrical properties of high-quality monolayers. Direct tunneling mechanism and high breakdown strength of ∼11.2 MV cm−1 are demonstrated for the h-BN monolayers grown on oxygen-incorporated Ni (111) substrates, indicating that these films have high quality. This study provides a unique example that heterogeneous catalysis principles can be applied to the epitaxy of 2D crystals in solid state field. Similar strategies can be used to grow other 2D crystalline materials, and are expected to facilitate the development of next generation devices based on 2D crystals. [ABSTRACT FROM AUTHOR]

Large-area epitaxial growth of III–V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 × 109 cm−2 is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO2/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm−2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III–V thin films on van der Waals substrates. [ABSTRACT FROM AUTHOR]

In this work, we report on the growth of hexagonal boron nitride (hBN) crystals from an iron flux at atmospheric pressure and high temperature and demonstrate that (i) the entire sheet of hBN crystals can be detached from the metal in a single step using hydrochloric acid and that (ii) these hBN crystals allow to fabricate high carrier mobility graphene-hBN devices. By combining spatially-resolved confocal Raman spectroscopy and electrical transport measurements, we confirm the excellent quality of these crystals for high-performance hBN-graphene-based van der Waals heterostructures. The full width at half maximum of the graphene Raman 2D peak is as low as 16 cm−1, and the room temperature charge carrier mobilitiy is around 80 000 cm2/(Vs) at a carrier density 1 × 1012 cm−12. This is fully comparable with devices of similar dimensions fabricated using crystalline hBN synthesized by the high pressure and high temperature method. Finally, we show that for exfoliated high-quality hBN flakes with a thickness between 20 and 40 nm the line width of the hBN Raman peak, in contrast to the graphene 2D line width, is not useful for benchmarking hBN in high mobility graphene devices. [ABSTRACT FROM AUTHOR]

The growth of two dimensional sp2-bonded boron nitride (2D-BN) was studied in a plasma-assisted molecular beam epitaxy set-up, using independent boron and nitrogen sources. We studied the growth conditions on polycrystalline Ni foils: B and N respective fluxes, growth temperature and time, which are influencing the surface morphology, stoichiometry and the 2D-BN domain size. Using a B/N precursor flux ratio ≫1 yields films with incorporated boron largely in excess and intermixed with 2D-BN. On the contrary, precursor flux ratios from moderately B-rich to moderately N-rich leads to stoichiometric 2D-BN. The optimum growth temperature is found to be 900 °C, a temperature for which the crystallographic quality is improved compared to lower temperatures thanks to the increased adatom surface mobility although a partial sublimation of BN occurs. Increasing the growth time under the optimized settings shows that the growth does not occur in a layer-by-layer mode, but rather by stacking BN domains on top of each other with a rather slow lateral extension of the domains. [ABSTRACT FROM AUTHOR]

Graphene and other two-dimensional materials (2DMs) have been shown to be promising candidates for the development of flexible and highly-sensitive strain sensors. However, the successful implementation of 2DMs in practical applications is slowed down by complex processing and still low sensitivity. Here, we report on a novel development of strain sensors based on Marangoni self-assemblies of graphene and of its hybrids with other 2DMs that can both withstand very large deformation and exhibit highly sensitive piezoresistive behaviour. By exploiting the Marangoni effect, reference films of self-assembled reduced graphene oxide (RGO) are first optimized, and the electromechanical behaviour has been assessed after deposition onto different elastomers demonstrating the potential of producing strain sensors suitable for different fields of application. Hybrid networks have been then prepared by adding hexagonal boron nitride (hBN) and fluorinated graphene (FGr) to the RGO dispersion. The hybrid integration of 2D materials is demonstrated to become a potential solution to increase substantially the sensitivity of the produced resistive strain sensors without compromising the mechanical integrity of the film. In fact, for large quasi-static deformations, a range of gauge factor values up to 2000 were demonstrated, while retaining a stable performance under cyclic deformations. [ABSTRACT FROM AUTHOR]

As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (R 205nm/ R 280nm = 235) and high detectivity up to 1.28 × 1011 Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature. [ABSTRACT FROM AUTHOR]

Molecular dynamics simulation is used to study the transport characteristics of NaCl solution in boron nitride nanotubes (BNNTs). It presents an interesting and well-supported MD study of the crystallization of NaCl from its water solution under the confinement of a 3 nm thick boron nitride nanotube with varied surface charging conditions. The results of the molecular dynamics simulation indicate that NaCl crystallization occurs in charged BNNTs at room temperature when the concentration of NaCl solution reaches about 1.2 M. The reason for this phenomenon is as follows: when the number of ions in the nanotubes is high, the double electric layer that forms at the nanoscale near the charged wall surface, the hydrophobicity of BNNTs, and the interaction among ions cause ions to aggregate in the nanotubes. As the concentration of NaCl solution increases, the concentration of ions when they aggregate in the nanotubes reaches the saturation concentration of the NaCl solution, resulting in the crystalline precipitation phenomenon. [ABSTRACT FROM AUTHOR]

Graphene sitting on hexagonal boron nitride (h -BN) always exhibits excellent electrical properties. And the properties of graphene on h -BN are often dominated by its domain size and boundaries. Chemical vapor deposition (CVD) is a promising approach to achieve large size graphene crystal. However, the CVD growth of graphene on h -BN still faces challenges in increasing coverage of monolayer graphene because of a weak control on nucleation and vertical growth. Here, an auxiliary source strategy is adapted to increase the nucleation density of graphene on h -BN and synthesis continuous graphene films. It is found that both silicon carbide and organic polymer e.g. methyl methacrylate can assist the nucleation of graphene, and then increases the coverage of graphene on h -BN. By optimizing the growth temperature, vertical accumulation of graphitic materials can be greatly suppressed. This work provides an effective approach for preparing continuous graphene film on h -BN, and may bring a new sight for the growth of high quality graphene. [ABSTRACT FROM AUTHOR]

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm−1. Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission. [ABSTRACT FROM AUTHOR]

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20 μ m. [ABSTRACT FROM AUTHOR]

One-dimensional van der Waals heterostructures (1D vdWHs) may suffer from external compression when applied in field-effect, light-emitting and photovoltaic devices. Ternary 1D vdWHs were recently reported to be successfully synthesized (Xiang et al 2020 Science 367, 537). In present work, the buckling behavior of ternary 1D vdWH consisting of an inner carbon nanotube, a middle boron nitride nanotube and an outer molybdenum disulfide nanotube is extensively investigated by using molecular dynamics simulations. We find that the composite can effectively enhance the capability of axial compression of the inner nanotubes. The 1D vdWH gradually loses its stability under uniaxial compression and the critical stress of buckling decreases as the temperature increases. Slenderness ratio α of 4.8 ≤ α ≤ 7.2 has a slight influence on the strength and stability of ternary 1D vdWH under axial compression. To obtain a 1D vdWH with best compressive stability and strength, there is an optimal diameter existing for any specific length. Our work provides guidance for the design of 1D vdWH with desired compressive stability. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride/graphene (hBN/G) vertical heterostructures have attracted extensive attention, owing to the unusual physical properties for basic research and electronic device applications. Here we report a facile deposition-segregation technique to synthesize hBN/G heterostructures on recyclable platinum (Pt) foil via low pressure chemical vapor deposition. The growth mechanism of the vertical hBN/G is demonstrated to be the surface deposition of hBN on top of the graphene segregated from the Pt foil with pre-dissolved carbon. The thickness of hBN and graphene can be controlled separately from sub-monolayer to multilayer through the fine control of the growth parameters. Further investigations by Raman, scanning Kelvin probe microscopy and transmission electron microscope show that the hBN/G inclines to form a heterostructure with strong interlayer coupling and with interlayer twist angle smaller than 1.5°. This deposition-segregation approach paves a new pathway for large-scale production of hBN/G heterostructures and could be applied to synthesize of other van der Waals heterostructures. [ABSTRACT FROM AUTHOR]

Light olefins (C2â€"C4) play a crucial role as basic ingredients in chemical industry, and oxidative dehydrogenation (ODH) of light alkanes to olefins has been one of the popular routes since the shale gas revolution. ODH of light alkanes has advantages on energy-and-cost saving as compared with traditional direct dehydrogenation, but it is restricted by its overoxidation which results in the relatively low olefin selectivity. Boron nitride (BN), an interesting nanomaterial with an analogous structure to graphene, springs out and manifests the superior performance as advanced catalysts in ODH, greatly improving the olefin selectivity under high alkane conversion. In this review, we introduce BN nanomaterials in four dimensions together with typical methods of syntheses. Traditional catalysts for ODH are also referred as comparison on several indicatorsâ€"olefin yields and preparation techniques, including the metal-based catalysts and the non-metal-based catalysts. We also surveyed the BN catalysts for ODH reaction in recent five years, focusing on the different dimensions of BN together with the synthetic routes accounting for the active sites and the catalytic ability. Finally, an outlook of the potential promotion on the design of BN-based catalysts and the possible routes for the exploration of BN-related catalytic mechanisms are proposed. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) Janus materials have attracted significant attention due to their asymmetrical structures and unique electronic properties. In this work, by using the first-principles calculation based on density functional theory, we systematically investigate the electronic properties of 6 types of Janus- X Ga2 Y/ Graphene van der Waals heterostructures (vdWHs). The results show that the Janus- X Ga2 Y/ Graphene vdWHs are connected by weak interlayer vdW forces and can form n-type Schottky contact, p-type Schottky contact or Ohmic contact when the spinâ€"orbit coupling (SOC) is not considered. However, when considering SOC, only the SeGa2S/G and G/SeGa2S vdWHs show n-type Schottky contact, and other vdWHs show Ohmic contacts. In addition, the Schottky barriers and contact types of SeGa2S/Graphene and Graphene/SeGa2S vdWHs can be effectively modulated by interlayer distance and biaxial strain. They can be transformed from intrinsic n-type Schottky contact to p-type Schottky contact when the interlayer distances are smaller than 2.65 Ă... and 2.90 Ă..., respectively. They can also be transformed to Ohmic contact by applying external biaxial strain. Our work can provide useful guidelines for designing Schottky nanodiodes, field effect transistors or other low-resistance nanodevices based on the 2D vdWHs. [ABSTRACT FROM AUTHOR]

A heterostructure composed of a combination of semi-metallic graphene (Gr) and high-absorption LaVO3 is ideal for high-performance translucent photodetector (PD) applications. Here, we present multilayer Gr/LaVO3 vertical-heterostructure semitransparent PDs with various layer numbers (L n ). At L n = 2, the PD shows the best performance with a responsivity (R) of 0.094 A Wâˆ'1 and a specific detectivity (D *) of 7.385 × 107 cm Hz1/2 Wâˆ'1 at 532 nm. Additionally, the average visible transmittance of the PD is 63%, i.e. it is semitransparent. We increased photocurrent (PC) by approximately 13%, from 0.564 to 0.635 ÎĽ A cmâˆ'2 by using an Al reflector on the semitransparent PD. The PC of an unencapsulated PD maintains about 86% (from 0.571 to 0.493 ÎĽ A cmâˆ'2) of its initial PC value after 2000 h at 25 °C temperature/30% relative humidity, showing good stability. This behavior is superior to that of previously reported graphene-based PDs. These results show that these PDs have great potential for semitransparent optoelectronic applications. [ABSTRACT FROM AUTHOR]

Through molecular dynamics simulations of tensile tests, the role that vacancies and Stoneâ€"Wales defects play in the mechanical properties of sandwich-like heterostructures, composed by graphene and two symmetric copper layers at nanoscale, is studied. The dependence on the armchair and zigzag chiralities of the graphene layer is also investigated. During elastic deformation, defects negatively affect the mechanical response. However, defective systems can show an improvement of the plastic properties. Vacancies have a stronger impact compared to Stoneâ€"Wales defects. Elasticity, toughness, and ductility are enhanced along the zigzag chirality, while stiffness is improved along the armchair direction. The Poisson’s ratio was calculated for all graphene-copper heterostructures. At a critical strain it becomes negative along the thickness direction, preserving the auxetic property at higher strains. In general, the behavior is governed by the graphene response. Our findings can be useful to understand the strengthening mechanism induced by this two-dimensional material in metals like copper and for the design of similar systems. [ABSTRACT FROM AUTHOR]

The development of two-dimensional (2D) magnetic semiconductors promotes the study of nonvolatile control of magnetoelectric nanodevices. MnBi2Te4 is the first realization of antiferromagnetic topological insulator. In semiconductor circuits, metal-semiconductor contacts are usually essential. In future all-carbon circuits, graphene is a promising material for 2D conductive connections. This work studies electronic transport through graphene-MnBi2Te4-graphene junctions. We find that graphene-MnBi2Te4 interfaces are perfect Ohmic contacts, which benefits the use of MnBi2Te4 in carbon circuits. The currents through MnBi2Te4 junctions possess high spin polarization. Compared with usual van der Waals junctions, lateral graphene-MnBi2Te4-graphene junctions present a lower barrier and much higher conductance to electrons. These findings may provide guidance for further study of 2D spin filtering. [ABSTRACT FROM AUTHOR]

Formic acid (FA) has been recently regarded as a safe and stable source of hydrogen (H2). Selective and efficient dehydrogenation of FA by an effective catalyst under mild conditions is still a challenge. So, different molar ratios of bimetallic Pdâ€"Au alloy nanoparticles were effectively stabilized and uniformly distributed on boron nitride nanosheets (BNSSs) surface via the precipitation process. Obtained catalysts were employed in FA decomposition for H2 production. Pdâ€"Au@BNNS containing 3% Au and 5% Pd (Au.03Pd.05@BNNS) exhibited high activity and 100% H2 selectivity for H2 production from FA at 50 °C. In order to optimize the reaction conditions, various factors including, time, temperature, solvent, base type, and amount of catalyst, were examined. [ABSTRACT FROM AUTHOR]

In this study, the SnO2 nanoflowers with hierarchical structures sensitized by boron nitride quantum dots (BNQDs) were prepared through a simple hydrothermal method. It was applied for the detection of the BTEX vapors. Further investigation showed that the response value of SnO2 sensitized by different amounts of BNQDs to the BTEX gases have a certain improvement. Especially 10-BNQDs/SnO2 gas sensor exhibited a significant improvement in gas sensing performance and its response values to different BTEX gases was increased up to 2â€"4 folds compared with the intrinsic SnO2 sensor. In addition, SnO2 nanoflowers based gas sensor showed surprisingly fast response and recovery time for BTEX gases with 1â€"2 s. That can be attributed to the sensitization of BNQDs and the hierarchical structure of SnO2 nanoflowers, which provided an easy channel for the gas diffusion. An economically viable gas sensor based on BNQDs sensitized SnO2 nanoflowers exhibited a great potential in BTEX gas detection due to the simple synthesis method, environmentally friendly raw materials and excellent gas sensing performance. [ABSTRACT FROM AUTHOR]

Printed electronics have been attracting significant interest for their potential to enable flexible and wearable electronic applications. Together with printable semiconductors, solution-processed dielectric inks are key in enabling low-power and high-performance printed electronics. In the quest for suitable dielectrics inks, two-dimensional materials such as hexagonal boron nitride (h-BN) have emerged in the form of printable dielectrics. In this work, we report barium titanate (BaTiO3) nanoparticles as an effective additive for inkjet-printable h-BN inks. The resulting inkjet printed BaTiO3/h-BN thin films reach a dielectric constant (ε r) of ∼16 by adding 10% of BaTiO3 nanoparticles (in their volume fraction to the exfoliated h-BN flakes) in water-based inks. This result enabled all-inkjet printed flexible capacitors with C  ∼ 10.39 nF cmâˆ'2, paving the way to future low power, printed and flexible electronics. [ABSTRACT FROM AUTHOR]

Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge- and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser. [ABSTRACT FROM AUTHOR]

To improve the sensitivity for electro-chemiluminescent (ECL) detection of chloramphenicol (CAP), a common broad-spectrum antibiotic, boron nitride quantum dots (BNQDs) were prepared with excellent photoelectric property and low toxicity. After its structure and electrochemical property were investigated in detail, it was noted that the ECL signal of Ru(Phen)32+ could be strengthened by the proposed BNQDs, which was further activated by ten’s times in the presence of CAP. Under the optimized conditions, there was an excellent linear relationship between Î"ECL and lg c CAP in a wide linear range from 1.0 × 10âˆ'10 to 1.0 × 10âˆ'6 mol lâˆ'1 CAP. The detection limit was super-low to be 3.3 × 10âˆ'11 mol lâˆ'1 (S/N = 3). When applied for CAP detection in real pharmaceutical and food samples, the recoveries were between 97.8% and 105.7% with R.S.D. less than 3.3%. A possible CAP-activated ECL mechanism of BNQDs-Ru(phen)32+ was also proposed. This work will offer a great potential for efficient monitoring of CAP pollution and clinical diagnosing of CAP-related diseases in future. [ABSTRACT FROM AUTHOR]

The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a metal-insulator-metal vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state to low resistance state. Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV decâˆ'1, ON/OFF ratio up to 108, SET current down to pA and SET voltage down to 180 mV. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride (h-BN) is an important insulating layered material for two-dimensional heterostructure devices. Among many applications, few-layer h-BN films have been employed as superior tunneling barrier films. However, it is difficult to construct a heterostructure with ultra-thin h-BN owing to the poor visibility of flakes on substrates, especially on a metallic surface substrate. Since reflectance from a metallic surface is generally high, a h-BN film on a metallic surface does not largely influence reflection spectra. In the present study, a thin Au layer with a thickness of ∼10 nm deposited on a Si substrate with a thermally grown SiO2 was used for visualizing h-BN flakes. The thin Au layer possesses conductivity and transparency. Thus, the Au/SiO2/Si structure serves as an electrode and contributes to the visualization of an ultra-thin film according to optical interference. As a demonstration, the wavelength-dependent contrast of exfoliated few-layer h-BN flakes on the substrate was investigated under a quasi-monochromatic light using an optical microscope. A monolayer h-BN film was recognized in the image taken by a standard digital camera using a narrow band-pass filter of 490 nm, providing maximum contrast. Since the contrast increases linearly with the number of layers, the appropriate number of layers is identified from the contrast. Furthermore, the insulating property of a h-BN flake is examined using a conductive atomic force microscope to confirm whether the thin Au layer serves as an electrode. The tunneling current through the h-BN flake is consistent with the number of layers estimated from the contrast. [ABSTRACT FROM AUTHOR]

In this work, we synthesized a monolayer of graphene and hexagonal boron nitride (hBN) using chemical vapor deposition. The physicochemical and electrochemical properties of the materials were evaluated to determine their morphology. High-purity materials and their atomic-scale coating on copper (Cu) foil were employed to prevent fast degradation rate. The hexagonal two-dimensional (2D) atomic structures of the as-prepared materials were assessed to derive their best anti-corrosion behavior. The material prepared under optimized conditions included edge-defect-free graphene nanosheets (∼0.0034 ÎĽ m2) and hBN (∼0.0038 ÎĽ m2) per unit area of 1 ÎĽ m2. The coating of each material on the Cu surface significantly reduced the corrosion rate, which was ∼2.44 × 10â€"2/year and 6.57 × 10â€"3/year for graphene/Cu and hBN/Cu, respectively. Importantly, the corrosion rate of Cu was approximately 3-fold lower after coating with hBN relative to that of graphene/Cu. This approach suggests that the surface coating of Cu using cost-effective, eco-friendly, and the most abundant materials in nature is of interest for developing marine anti-corrosion micro-electronic devices and achieving surface modification of pure metals in industrial applications. [ABSTRACT FROM AUTHOR]

Color centers in hexagonal boron nitride (h BN) have emerged as promising candidates for single-photon emitters (SPEs) due to their bright emission characteristics at room temperature. In contrast to mono- and few-layered h BN, color centers in multi-layered flakes show superior emission characteristics such as higher saturation counts and spectral stability. Here, we report a method for determining both the axial position and three-dimensional dipole orientation of SPEs in thick h BN flakes by tuning the photonic local density of states using vanadium dioxide (VO2), a phase change material. Quantum emitters under study exhibit a strong surface-normal dipole orientation, providing some insight on the atomic structure of h BN SPEs, deeply embedded in thick crystals. Next, we optimized a hot pickup technique to reproducibly transfer the h BN flake from VO2/sapphire substrate onto SiO2/Si substrate and relocated the same emitters. Our approach serves as a practical method to systematically characterize SPEs in h BN prior to integration in quantum photonics systems. [ABSTRACT FROM AUTHOR]

Herein, FePS3/reduced graphene oxide heterostructure has been prepared via a typical hydrothermal process, and flexible photodetectors based on hybrids have been subsequently fabricated. The photoresponse measurement results demonstrate that the photodetector exhibits obvious photoelectric conversion behavior without applied potential, indicating that the device possesses the capability to be self-powered. In addition, the photocurrent density of the as-fabricated photodetectors reaches up to 125 nA cm−2 under 90 mW cm−2 illumination intensity without an external power source, which is 5.86 times higher than single FePS3-based devices. Furthermore, the maximum attenuation in photocurrent density of the as-fabricated flexible photodetectors measured at −0.3 V after different bending cycles and bending angles is 29.8% and 17.7%, respectively. These results demonstrate that the as-fabricated photodetectors have excellent flexibility and provide a simple and effective strategy for the construction of flexible photodetectors. [ABSTRACT FROM AUTHOR]

Electrical synaptic devices are the basic components for the hardware based neuromorphic computational systems, which are expected to break the bottleneck of current von Neumann architecture. So far, synaptic devices based on three-terminal transistors are considered to provide the most stable performance, which usually use gate pulses to modulate the channel conductance through a floating gate and/or charge trapping layer. Herein, we report a three-terminal synaptic device based on a two-dimensional molybdenum ditelluride (MoTe2)/hexagonal boron nitride (hBN) heterostructure. This structure enables stable and prominent conductance modulation of the MoTe2 channel by the photo-induced doping method through electron migration between the MoTe2 channel and ultraviolet (UV) light excited mid-gap defect states in hBN. Therefore, it is free of the floating gate and charge trapping layer to reduce the thickness and simplify the fabrication/design of the device. Moreover, since UV illumination is indispensable for stable doping in MoTe2 channel, the device can realize both short- (without UV illumination) and long- (with UV illumination) term plasticity. Meanwhile, the introduction of UV light allows additional tunability on the MoTe2 channel conductance through the wavelength and power intensity of incident UV, which may be important to mimic advanced synaptic functions. In addition, the photo-induced doping method can bidirectionally dope MoTe2 channel, which not only leads to large high/low resistance ratio for potential multi-level storage, but also implement both potentiation (n-doping) and depression (p-doping) of synaptic weight. This work explores alternative three-terminal synaptic configuration without floating gate and charge trapping layer, which may inspire researches on novel electrical synapse mechanisms. [ABSTRACT FROM AUTHOR]

Owing to many fascinating properties including high thermal and chemical stability, excellent electrical insulation, fire-retardant and antibacterial properties, hexagonal boron nitride (hBN) has emerged as a prominent 2D material for broad applications. However, the production of high quality of hBN by chemical exfoliation from its precursor is still challenging. This paper presents a high-yield (+83%), low-cost and energy-efficient wet chemical exfoliation strategy, which produces few-layers (FL, 3–6 layers) of edge-functionalized (OH) hBN nanosheets with uniform size (486 ± 51 nm). This optimized preparation is established based on a comprehensive investigation on the key exfoliation parameters such as exfoliation temperature, time and amount of the oxidant (potassium permanganate). High quality of FL-hBN was confirmed by various characterization techniques including scanning electron microscopy coupled with energy dispersive X-ray, transmission electron microscopy, Raman, Fourier transform infrared spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy analyses. The outcome of this study paves a promising pathway to effectively produce hBN through a cost-efficient exfoliation approach, which has a significant impact on industrial applications. [ABSTRACT FROM AUTHOR]

Thermosets possess diverse physical and chemical properties and thus they are widely used in various applications such as electronic packaging, construction, and automotive industries. However, their poor thermal conductivity and weak mechanical performance jeopardize their continual spread in modern industry. In this study, boron nitride nanosheets (BNNSs) were employed to promote both mechanical and thermal properties of epoxy nanocomposites. BNNSs and their epoxy nanocomposites were fabricated using in situ solvent ultrasonication and in situ polymerization, respectively. Thermal conductivity was enhanced by 153% increment in epoxy/BNNS nanocomposite at 7 wt% in comparison with neat epoxy. In parallel, Young's modulus, lap shear strength, fracture toughness (K1C) and energy release rate (G1C) increased by 69%, 31%, 122% and 118%, respectively at 1 wt% BNNSs. Moreover, fatigue life and strength of lap shear joints were significantly improved upon adding BNNSs. A numerical model of the single lap shear joint was developed to validate the accuracy of the material constants obtained. Epoxy/BNNS nanocomposites exhibited an outstanding mechanical performance as well as high thermal conductivity giving them merits to widen their applications in electronic and automotive industry. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) molybdenum disulphide (MoS2) transition metal dichalcogenides (TMDs) have great potential for use in optical and electronic device applications; however, the performance of MoS2 is limited by its crystal quality, which serves as a measure of the defects and grain boundaries in the grown material. Therefore, the high-quality growth of MoS2 crystals continues to be a critical issue. In this context, we propose the formation of high-quality MoS2 crystals via the flux method. The resulting electrical properties demonstrate the significant impact of crystal morphology on the performance of MoS2 field-effect transistors. MoS2 made with a relatively higher concentration of sulphur (a molar ratio of 2.2) and at a cooling rate of 2.5 °C h−1 yielded good quality and optimally sized crystals. The room-temperature and low-temperature (77 K) electrical transport properties of MoS2 field-effect transistors (FETs) were studied in detail, with and without the use of a hexagonal boron nitride (h-BN) dielectric to address the mobility degradation issue due to scattering at the SiO2/2D material interface. A maximum field-effect mobility of 113 cm2 V−1 s−1 was achieved at 77 K for the MoS2/h-BN FET following high-quality crystal formation by the flux method. Our results confirm the achievement of large-scale high-quality crystal growth with reduced defect density using the flux method and are key to achieving higher mobility in MoS2 FET devices in parallel with commercially accessible MoS2 crystals. [ABSTRACT FROM AUTHOR]

The development of low-cost, high-efficiency catalysts for the hydrogen evolution reaction is important for hydrogen production. In this study we investigate hydrogen adsorption at the interfaces of C/BN hetero-nanotubes using first-principles density functional theory calculations. Substantial charge redistributions associated with states near the Fermi level occur at the interfaces. More importantly, such electronic modification can enhance hydrogen adsorption at the interfacial atoms. As a result, the adsorption free energies ΔGH* of hydrogen for the interfaces range from −0.26 to 0.30 eV, depending on hydrogen coverage. These values are much closer to zero than those for the basal plane, suggesting that the interfaces could be active sites for the hydrogen evolution reaction. The interfacial adsorption sites show a distinctive hybridization between the H s and C p orbitals, which accounts for the enhanced hydrogen adsorption at the interfaces. These findings have important implications for hydrogen energy applications. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride (hBN) is one of the most suitable 2D materials for supporting graphene in electronic devices, and it plays a fundamental role in screening out the effect of charge impurities in graphene in contrast to inhomogeneous supports such as silicon dioxide (SiO2). Although many interesting surface science techniques such as scanning tunneling microscopy (STM) revealed dielectric screening by hBN and emergent physical phenomena were observed, STM is only appropriate for graphene electronics. In this paper, we demonstrate the dielectric screening by hBN in graphene integrated on a silicon photonic waveguide from the perspective of a near-field scanning optical microscopy (NSOM) and Raman spectroscopy. We found shifts in the Raman spectra and about three times lower slope decrease in the measured electric near-field amplitude for graphene on hBN relative to that for graphene on SiO2. Based on finite-difference time-domain simulations, we confirm lower electric field slope and scattering rate in graphene on hBN, which implies dielectric screening, in agreement with the NSOM signal. Graphene on hBN integrated on silicon photonics can pave the way for high-performance hybrid graphene photonics. [ABSTRACT FROM AUTHOR]

In this study, a proximity catalysis route was developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils, which shows much improved synthesis efficiency (500 times faster than other routes) and good crystalline quality graphene (large single crystalline length up to 10 μm). The key advantage of our synthesis route is the introduction of fresh Cu foil (or Cu foam) into the high-temperature zone using a turntable. At high temperatures, Cu vapor acts as a gaseous catalyst, which can reduce the energy barrier of graphene growth and promote the decomposition of carbon sources. Therefore, after the first layer of hexagonal boron nitride is grown on the Cu substrate, another layer of graphene can be grown by introducing a fresh catalyst. Our calculations have revealed the catalytic effect and graphene growth contribution of Cu vapor evaporated by the suspended catalyst. We also investigated the growth sequence of graphene from 1 to 24 carbon atoms on h-BN/Cu and determined the morphology evolution of these carbon clusters. In this regard, multilayer stacked heterogeneous structures can be synthesized, thus increasing their potential applications in high performance electronic devices and energy harvesting/transition directions. [ABSTRACT FROM AUTHOR]

Since the discovery of graphene and other two-dimensional (2D) materials in recent years, heterostructures composed of multilayered 2D materials have attracted immense research interest. This is mainly due to the potential prospects of the heterostructures for basic and applied applications related to the emerging technology of energy-efficient optoelectronic devices. In particular, heterostructures of graphene with 2D materials of similar structure have been proposed to open up the band gap to tune the transport properties of graphene for a variety of technological applications. In this paper, we propose a heterostructure scheme of band-gap engineering and modification of the electronic band structure of graphene via the heterostructure of graphene–boron nitride (GBN) based on first-principles calculations. For a comparative analysis of the properties of the proposed GBN heterostructure, we employ Kohn–Sham density functional theory (DFT) using local density and generalized gradient approximations within Perdew–Burke–Ernzehof parameterization. To account for weak interlayer van der Waals interactions, we employ the semi-empirical dispersion-corrected DFT scheme of Grimme, called the DFT-D2 approximation. In the vertical stacking arrangement of boron-nitride-doped graphene with hexagonal boron nitride, we predict a band-gap opening of 1.12 eV which, to our knowledge, is the largest value attained for this kind of system. The impact of interlayer spacing on the band-gap opening arising from the interlayer coupling effect is also analyzed. The band-gap enhancement supports the widely proposed promise of GBN heterostructure in design of high-performance optoelectronic devices such as field-effect transistors for potential applications. [ABSTRACT FROM AUTHOR]

Metal-free semiconductors with desirable characteristics have recently gained great attention in the field of hydrogen generation. The non-metal material B2S3 has two phases, hexagonal B2S3 (h-B2S3) and orthorhombic B2S3 (o-B2S3), which compose a novel class of 2D materials. Both h-B2S3 and o-B2S3 monolayers are direct semiconductors with bandgaps of 2.89 and 3.77 eV by the Heyd-Scuserria-Ernzerhof (HSE) function, respectively. Under appropriate uniaxial strain (1%), the bandgap of h-B2S3 can be decreased to 2.8 eV. The carrier mobility can reach 1160 cm2 V−1 s−1, supporting the fast migration of photo-induced carriers. Most importantly, the band edges of both h-B2S3 and o-B2S3 cover the reduction and oxidation levels for water splitting. We explore the process of photocatalytic water splitting on h-B2S3 monolayers by analyzing the feasibility of the decomposition of H2O and the generation of H2. The results indicate that the special mesoporous structure of B2S3 is helpful for photocatalytic hydrogen production. The new nanomaterial, B2S3, offers great promise as a metal-free photocatalyst due to its tunable bandgaps, its useful band edges, and its other excellent electronic properties. [ABSTRACT FROM AUTHOR]

The integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS2)-based devices has been a significant fabrication impediment to their potential applications. Here, we have demonstrated the advantage of 1D indium metal contact with fully encapsulated MoS2 within hexagonal boron nitride. The electrical measurements of the device exhibit ambipolar transport with an on/off ratio of for holes and for electrons. The device exhibits high field-effect mobility of at liquid nitrogen temperature. Furthermore, we have also analysed the charge-transport mechanism at the interface and have calculated the Schottky barrier height from the temperature-dependent measurement. These results are highly promising for the use of air-sensitive material heterostructure and large-scale design of trending flexible, transparent electronic wearable devices. [ABSTRACT FROM AUTHOR]

The thermal properties of individual single-walled carbon nanotubes (SWCNTs) have been well documented in the literature following decades of intensive study. However, when SWCNTs form a macroscale assembly, the thermal transport in these complex structures usually not only depends on the properties of the individual tubes, but also is affected and sometimes dominated by inner structural details, e.g. bundles and junctions. In this work, we first performed an experimental measurement of the thermal conductivities of individual SWCNT bundles of different sizes using a suspended micro-thermometer. The results, together with the data that we obtained from a previous work, give a complete experimental understanding of the effect of bundling on the thermal conductivity of SWCNTs. With these quantitative understandings, we propose a phenomenological model to describe the thermal transport in two-dimensional (2D) SWCNT films. The term 'line density' is defined to describe the effective thermal transport channels in this complex 2D network. Along with experimentally obtained geometric statistics and film transparency, the thermal conductance of SWCNTs is estimated, and the effects of bundle length, diameter, and contact conductance are systematically discussed. Finally, we extend this model to explain thermal transport in 2D networks of one-dimensional van der Waals heterostructures, which are coaxial hetero-nanotubes we recently synthesized using SWCNTs as the template. This extended model suggests that the contribution of boron nitride nanotubes (BNNTs) to the overall performance of a SWCNT–BNNT heterostructured film depends on the transparency of the original SWCNT film. The increase in the thermal conductance of a highly transparent film is estimated to be larger than that of a less transparent film, which shows a good agreement with our experimental observations and proves the validity of the proposed phenomenological model. [ABSTRACT FROM AUTHOR]

Boron nitride quantum dots (BNQDs) have been proposed as probes for bioimaging owing their to outstanding photoluminescent properties, although their hydrophobic nature and strong aggregation tendency in aqueous media limit their application in the biomedical field. In this work, we synthesize BNQDs by a liquid exfoliation–solvothermal process under pressure from boron nitride nanoparticles in N,N-dimethylformamide. The BNQDs display an average size of 3.3 ± 0.6 nm, as measured by transmission electron microscopy, and a (100) crystalline structure. In addition, a quantum yield of 21.75 ± 0.20% was achieved. To ensure complete dispersibility in water and prevent possible elimination by renal filtration upon injection, the BNQDs (20% w/w) are encapsulated within poly(ethylene glycol)-b-poly(epsilon-caprolactone) nanoparticles by a simple and scalable nanoprecipitation method, and hybrid nanocomposite particles with significantly stronger photoluminescence than their free counterparts are produced. Finally, their optimal cell compatibility and bioimaging features are demonstrated in vitro in murine macrophage and human rhabdomyosarcoma cell lines. [ABSTRACT FROM AUTHOR]

The current rechargeable battery technologies have a failure in their performance at high pressure and temperature. In this article, we have brought theoretical insights on using boron nitride flakes as a protecting layer for a lithium-ion battery device and extended its application for a spin-dependent photon emission device. Hence, the electronic properties of pristine and lithium-doped hydrogen-edged boron nitride flakes have been studied by the first principle density functional theory calculations. In this study, we have discussed the stability, adsorption energies, bond lengths, electronic gaps, frontier molecular orbitals, the density of states, charge distributions, and dipole moments of pristine and lithium hydrogen-edged doped boron nitride flakes. [ABSTRACT FROM AUTHOR]

Single-particle irradiation is a typical condition in space applications, which could be detrimental for electronic devices through processes such as single-event upset or latch-up. For functional devices made of few-atom-thick monolayers that are entirely exposed to the environment, the irradiation effects could be manifested through localized or delocalized electronic excitation, in addition to lattice defect creation. In this work, we explore the single- H irradiation effects on bare or coated graphene monolayers. Real-time time-dependent density functional theory-based first-principles calculation results elucidate the evolution of charge densities in the composite system, showing notable charge excitation but negligible charge deposition. A hexagonal boron nitride coating layer does not protect graphene from these processes. Principal component analysis demonstrates the dominance of localized excitation accompanied by nuclear motion, bond distortion and vibration, as well as a minor contribution from delocalized plasmonic excitation. The significance of coupled electron–ion dynamics in modulating the irradiation processes is identified from comparative studies on the spatial and temporal patterns of excitation for unconstrained and constrained lattices. The stopping power or energy deposition is also calculated, quantifying the dissipative nature of charge density excitation. This study offers fundamental understandings of the single-particle irradiation effects on optoelectronic devices constructed from low-dimensional materials, and inspires unconventional techniques to excite the electrons and ions in a controllable way. [ABSTRACT FROM AUTHOR]

We review the current state-of-the-art graphene-enhanced thermal interface materials for the management of heat in the next generation of electronics. Increased integration densities, speed and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of composites, while simultaneously preserving electrical insulation. A hybrid filler approach, using graphene and boron nitride, is presented as a possible technology providing for the independent control of electrical and thermal conduction. The reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of graphene-enhanced thermal interface materials compared to alternative technologies. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) hexagonal boron nitride (h-BN) is becoming increasingly interesting for wider engineering applications. Thermal exfoliation is being suggested as a facile technology to produce large quantities of 2D h-BN. Further optimization of the process requires fundamental understanding of the exfoliation mechanism, which is hardly realized by ex situ techniques. In this study, in situ synchrotron x-ray powder diffraction experiments are conducted while heat treating bulk h-BN up to 1273 K. During the heating process, linear expansion of c-axis is observed and the contraction of a-axis up to around 750 K is consistent with previous research. However, a changing behavior from contraction to expansion in a-axis direction is newly observed when heating over 750 K. With the consideration of previous thermally oxidation studies, a hypothesis of thermal assisted exfoliation with oxygen interstitial and substitution of nitrogen at high temperature is proposed. [ABSTRACT FROM AUTHOR]

With more widespread applications of nanotechnology, heat dissipation in nanoscale devices is becoming a critical issue. We study the thermal response of wafer-scale hexagonal boron nitride (hBN) layers, which find potential applications as ideal substrates in two dimensional devices. Sapphire-supported thin hBN films, 2′′ in size and of different thicknesses, were grown using metalorganic vapour phase epitaxy. These large-scale films exhibit wrinkles defects and grain boundaries over their entire area. The shift of phonon mode with temperature is analysed by considering the cumulative contribution of anharmonic phonon decay along with lattice thermal expansion, defect, and strain modulation. The study demonstrates that during heat treatment the strain evolution plays a dominating role in governing the characteristics of the wrinkled thinner films. Interestingly we find that both defects and strain determine the spectral line-width of these wafer-scale films. To the end, from Raman line-width, the changes in phonon lifetime in delaminated and as-grown films is estimated. The results suggest the possibility of a reduction in thermal transport in these wafer-scale films compared to their bulk counterpart. [ABSTRACT FROM AUTHOR]

The adsorption of CO, CO2, CH4, H2, N2 and N2O on armchair (5,5) boron nitride nanotube (BNNT) with and without the doping of transition metals (TM), i.e. Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn, was investigated using the density functional theory calculation. The results indicate all the considered gases are physically adsorbed by weak interaction on the pure BNNT, revealing that pure BNNT has poor sensing performance for these gases. TM are then doped in the B or N vacancy of BNNT to improve the sensitivity and selectivity. As a result, it was found that the gas adsorption performance of BNNT is obviously enhanced due to the introduction of TM dopant atom. In particularly, according to the results of adsorption energy, Cu doped BNNT (Cu-BNNT) system shows a high selectivity toward CO molecule compared with other metal doped systems. This is further confirmed by the density of state, energy gap and charge transfer analyses. Furthermore, based on the sensor performance analysis, it was found that Cu-BNNT also has favorable desorption characteristics for CO. Therefore, this study concluded that Cu-BNNT can be used as a superior sensor material with high sensitivity, selectivity and favorable recycle time for CO gas. [ABSTRACT FROM AUTHOR]

The capability of hexagonal boron nitride (h-BN) to adsorb gas atoms may stimulate various promising applications in environment remediation and energy storage, while the interactivity with gas molecules yet remains challenging due to its inherent chemical inertness. In this article, we report a feasible and effective route for the scalable synthesis of vertically aligned h-BN nanowalls assisted by reduced graphene oxide (rGO) without metallic catalysts. The average thickness of the fine h-BN nanowalls is few-atomic layers about 3.7 nm, that grow on the large substrate-like flakes transformed from the pristine rGO. The hierarchical h-BN nanowalls exhibit an enhanced gas adsorption performance, not only through physisorption owing to the synergistic combination of different porous geometries, but also through chemisorption via the open edge groups. Moreover, it demonstrates a significantly enhanced adsorption of CO2 over CH4 as compared to the h-BN nanosheets with similar sizes. Density functional theory calculations reveal that the –OH edge groups can effectively increase the adsorption capability towards CO2, accompanied by a shortened adsorption distance when the gas molecule is energetically stabilized. The wetting characteristics of h-BN nanowalls was further examined by contact angle goniometry. [ABSTRACT FROM AUTHOR]