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We present facile synthesis of bright CdS/CdSe/CdS@SiO2 nanoparticles with 72% of quantum yields (QYs) retaining ca 80% of the original QYs. The main innovative point is the utilization of the highly luminescent CdS/CdSe/CdS seed/spherical quantum well/shell (SQW) as silica coating seeds. The significance of inorganic semiconductor shell passivation and structure design of quantum dots (QDs) for obtaining bright QD@SiO2 is demonstrated by applying silica encapsulation via reverse microemulsion method to three kinds of QDs with different structure: CdSe core and 2 nm CdS shell (CdSe/CdS-thin); CdSe core and 6 nm CdS shell (CdSe/CdS-thick); and CdS core, CdSe intermediate shell and 5 nm CdS outer shell (CdS/CdSe/CdS-SQW). Silica encapsulation inevitably results in lower photoluminescence quantum yield (PL QY) than pristine QDs due to formation of surface defects. However, the retaining ratio of pristine QY is different in the three silica coated samples; for example, CdSe/CdS-thin/SiO2 shows the lowest retaining ratio (36%) while the retaining ratio of pristine PL QY in CdSe/CdS-thick/SiO2 and SQW/SiO2 is over 80% and SQW/SiO2 shows the highest resulting PL QY. Thick outermost CdS shell isolates the excitons from the defects at surface, making PL QY relatively insensitive to silica encapsulation. The bright SiO2-coated SQW sample shows robustness against harsh conditions, such as acid etching and thermal annealing. The high luminescence and long-term stability highlights the potential of using the SQW/SiO2 nanoparticles in bio-labeling or display applications. [ABSTRACT FROM AUTHOR]

We demonstrate deep blue light-emitting diodes based on chemically synthesized Cd1[?]xZnxS@ZnS quantum dots (QDs). Composite films of poly-(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD) and 4,4',N,N'-diphenylcarbazole (CBP) are employed for facilitated hole injection into Cd1[?]xZnxS@ZnS QDs and uniform QD deposition. The fabricated devices possess moderate turn-on voltage (6 V) and external quantum efficiency (0.1-0.3%), and exhibit color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum <25 nm (Commission Internationale de l'Eclairage (CIE) coordinates of (0.169, 0.024) and (0.156, 0.028) for devices with electroluminescence (EL) lmax at 434 and 454 nm, respectively). Most of the emission originates from the Cd1[?]xZnxS@ZnS QD layers (99% of the total EL emission). [ABSTRACT FROM AUTHOR]