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We demonstrate a process to selectively tune the pore size of an individual nanochannel in an array of high-aspect-ratio anodic aluminum oxide (AAO) nanochannels in which the pore sizes were originally uniform. This novel process enables us to fabricate arrays of AAO nanochannels of variable sizes arranged in any custom-designed geometry. The process is based on our ability to selectively close an individual nanochannel in an array by using focused ion beam (FIB) sputtering, which leads to redeposition of the sputtered material and closure of the nanochannel with a capping layer of a thickness depending on the energy of the FIB. When such a partially capped array is etched in acid, the capping layers are dissolved after different time delays due to their different thicknesses, which results in differences in the time required for the following pore-widening etching processes and therefore creates an array of nanochannels with variable pore sizes. The ability to fabricate such AAO templates with high-aspect-ratio nanochannels of tunable sizes arranged in a custom-designed geometry paves the way for the creation of nanophotonic and nanoelectronic devices.

Focused ion beam lithography and a two-step anodization have been combined to fabricate a vertical fan-out platform containing an array of unique probes. Each probe comprises three anodic alumina nanochannels with a fan-out arrangement. The lithography is used to pattern an aluminum sheet with a custom-designed array of triangular 'cells' whose apexes are composed of nanoholes. The nanoholes grow into straight nanochannels under proper voltage in the first-step anodization. The second step uses a doubled voltage to induce lateral repulsion among the nanochannels' growth fronts originating in the same cell. Therefore, the fronts fan out. The repulsion roots in the inter-front distance being shorter than the naturally favoured length, which increases with anodization voltage. The fan-out evolution continues until the growth fronts originating in all the cells evolve into a close-packed two-dimensional hexagonal lattice whose spacing is identical to the favoured one. The chemical and physical mechanisms behind the fan-out fabrication are discussed. This novel fan-out platform facilitates probing and handling of many signals from different areas on a sample's surface and is therefore promising for applications in detection and manipulation at the nanoscale level.

Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (rho(c)) of 1.54 x 10(-6) Omega cm(2). Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow rho(c). The value of rho(c) lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

Previous investigations of surface plasmons in Ag largely focused on their excitations in the visible spectral regime. Using scanning transmission electron microscopy with an electron beam of 0.2 nm in conjunction with electron energy-loss spectroscopy, we spectrally and spatially probe the surface plasmons in individual Ag nanoparticles (approximately 30 nm), grown on Si, in the ultra-violet spectral regime. The nanomaterials show respective sharp and broad surface-plasmon resonances at approximately 3.5 eV (approximately 355 nm) and approximately 7.0 eV (approximately 177 nm), and the correlated spectral calculations established their multipolar characteristics. The near-field distributions of the surface plasmons on the nanoparticles were also mapped out, revealing the predominant dipolar nature of the 3.5 eV excitation with obvious near-field enhancements at one end of the nano-object. The unveiled near-field enhancements have potential applications in plasmonics and molecular sensing.

We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as approximately 10(8) have been fabricated and characterized.

A high fidelity electrochemical replication technique for the rapid fabrication of Al nanostructures with 10 nm lateral resolution has been successfully demonstrated. Aluminum is electrodeposited onto a lithographically patterned Si master using a non-aqueous organic hydride bath of aluminum chloride and lithium aluminum hydride at room temperature. Chemical pretreatment of the Si surface allows a clean detachment of the replicated Al foil from the master, permitting its repetitive use for mass replication. This high throughput technique opens up new possibilities in the fabrication of Al-related nanostructures, including the growth of long range ordered anodic alumina nanochannel arrays.

A fast electrochemical replication technique has been developed to fabricate large-scale ultra-smooth aluminum foils by exploiting readily available large-scale smooth silicon wafers as the masters. Since the adhesion of aluminum on silicon depends on the time of surface pretreatment in water, it is possible to either detach the replicated aluminum from the silicon master without damaging the replicated aluminum and master or integrate the aluminum film to the silicon substrate. Replicated ultra-smooth aluminum foils are used for the growth of both self-organized and lithographically guided long-range ordered arrays of anodic alumina nanochannels without any polishing pretreatment.