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We report a five-fold luminance increase of green-light-emitting CdSe@ZnS quantum-dot LEDs (QLEDs) in response to treatment with a 2-ethoxyethanol solution of cesium carbonate (Cs

We report on a substantial increase in luminance and luminous efficiency of green-light emitting devices (LEDs) that use colloidal CdSe@ZnS quantum dots (QDs) as a light-emitting material in response to treatment with 1,2-ethanedithiol (EDT). The maximum luminance increased from 1146 to 8075 cd m-2, and luminous yield from 0.15 to 1.41 cd A-1 as a result of treating an incomplete device with drops of EDT right after spin-coating QDs onto a ZnO-nanoparticle layer. Based on systematic studies on substrate-dependent change in photoluminescence, and current-voltage and luminance-voltage characteristics, we propose that passivation of intra-gap defect states and relative shifts of energy levels relevant to the operation of QD LEDs are two main results of EDT treatment. In particular, we argue that energy-level shift without emission-color change can be attributed to surface-dipole effects.

We report a five-fold luminance increase of green-light-emitting CdSe@ZnS quantum-dot LEDs (QLEDs) in response to treatment with a 2-ethoxyethanol solution of cesium carbonate (Cs2CO3). The maximum luminous yield of Cs2CO3-treated QLED is as high as 3.41 cd A−1 at 6.4 V. To elucidate device-performance improvement, we model measured currents as the sum of radiative and non-radiative recombination components, which are respectively represented by modified Shockley equations. Variations in model parameters show that a shift in Fermi level, reduction of barrier heights, and passivation of mid-gap defect states are the main results of Cs2CO3 treatment. In spite of a large luminance difference, light-extraction efficiency remains the same at 9% regardless of Cs2CO3 treatment because of the similarity in optical structures.

Ultra-thin and ultra-smooth gold (Au) films are appealing for photonic applications including surface plasmon resonances and transparent contacts. However, poor adhesion at the Au-dielectric interface prohibits the formation of a mechanically stable, ultra-thin, and ultra-smooth Au film. A conventional solution is to use a metallic adhesion layer, such as titanium and chromium, however such layers cause the optical properties of pure Au to deteriorate. Here we report the use of silk protein to enhance the adhesion at the Au-dielectric interface, thus obtaining ultra-smooth sub-10 nm Au films. The Au films that were deposited onto the silk layer exhibited superior surface roughness to those deposited on SiO2, Si, and poly(methyl methacrylate), along with improved adhesion, electrical conductivity, and optical transparency. Additionally, we confirm that a metal-insulator-metal optical resonator can be successfully generated using a silk insulating layer without the use of a metallic adhesion layer.

International audience; We have designed and fabricated a new type of field electron source for a novel onboard mass spectrometer. The new electron source, which is a field effect emitter in a triode configuration, consists of a CNT-column array cathode and an extraction gate with holes that are aligned concentrically with respect to the cylindrical CNT columns. In triode mode operation, cathode currents as large as ~420 μA have been emitted with an anode-to-gate current ratio of ~1.5. To account for the observed emission characteristics of the new electron source, we have carried out multi-scale simulations that combine a three-dimensional (3D) microscopic model in the vicinity of an actual emission site with a two-dimensional (2D) macroscopic model that covers the whole device structure. Because the mesh size in the microscopic 3D model is as small as 100 nm, the contributions of the extruding CNT bundle at the top edge of an electron column can be examined in detail. Unlike the macroscopic 2D simulation that shows only small field enhancement at CNT column's top edge, the multi-scale simulation successfully reproduced the local electric field strongly enough to emit the measured cathode currents and the electric field distribution which is consistent with the measured anode-to-gate current ratio.

Bending and bundling was observed from vertically aligned arrays of ZnO nanowires with flat (0001) top surfaces, which were synthesized using a vapor-phase method without metal catalysts. Sufficient evidence was found to exclude electron-beam bombardment during scanning electron microscopy as a cause for bending and bundling. We attribute the bending and bundling to electrostatic interactions due to charged (0001) polar surfaces, and also discussed the threshold surface charge densities for the bending and bundling based on a simple cantilever-bending model. Some growth features were indicative of the operation of electrostatic interactions during the growth.

Flexible paper-like ZnO nanowire films are fabricated and the effect of L-lysine passivation of the nanowire surfaces on improving the UV photoresponse is studied. We prepare three types of nanowires with different defect contents, and find that the L-lysine treatment can suppress the oxygen-vacancy-related photoluminescence as well as enhance the UV photoconduction. The nanowires with fewer defects gain larger enhancement of UV photoconduction after L-lysine treatment. Reproducible UV photoresponse of the devices in humid air is obtained due to L-lysine surface passivation, ruling out the influence of water molecules in degrading the UV photocurrent.

The apparent field-effect-transistor (FET)-like operations of a device based on a network of single-walled carbon nanotubes (SWCNTs) are elucidated with the help of local probe electrical characterization methods using an atomic force microscope. The apparent switching behavior of the device with an on-off ratio10(4) is found to be due to just two localized areas in the network of SWCNTs based on the measurements by electrostatic force microscopy and scanning gate microscopy. The result demonstrates that the conductance of a network of SWCNTs can be dominated by localized perturbations.

We fabricated and characterized quantum-dot light emitting devices (QLEDs) that consisted of a CdSe/ZnS quantum-dot (QD) emitting layer, a hole-transporting nickel oxide (NiO) layer and/or an electron-transporting zinc oxide (ZnO) layer. Both the p-type NiO and n-type ZnO layers were formed by using sol-gel processes. All the fabricated CdSe/ZnS QLEDs showed similar electroluminescence spectra that originated from the green CdSe/ZnS QDs. However, different combinations of hole- and electron-transporting layers resulted in efficiency variations. In addition to the control of the respective concentrations of holes and electrons within a multilayer device structure, which determines the luminance and efficiency of QLEDs, the use of metal oxide layers is advantageous for long-term stability of QLEDs because they are air stable and can block the permeation of water vapor and oxygen in ambient air to a QD emitting layer. Moreover, the wet chemistry processing for their formation makes metal oxide layers attractive for low cost and/or large area manufacture of QLEDs.

We report on electron beam induced current (EBIC) from individual carbon nanotubes (CNTs) which are in contact with metal electrodes. The EBIC signals originate from the diffusion of excess carriers induced by the electron beam bombardment. The EBIC image enables us to locate the individual CNTs efficiently. From the polarity of the EBIC signals we can identify the electrical contacts to the metal electrodes. More importantly, we demonstrate that the EBIC can be used to characterize the local electrical properties of CNT-based devices, such as asymmetry in metal contacts and the presence of defects. EBIC is also observed regardless of the presence of insulating surfaces, indicating that the EBIC is a result of the direct interaction between the CNTs and the electron beams.

The growth of ZnO nanorods on Au-coated ITO substrates using a low temperature wet chemical process is presented. Electron microscopy and x-ray diffraction observations reveal that the crystalline ZnO nanorods are preferentially oriented along the c axis. Room temperature photoluminescence (PL) measurements reveal a strong band edge emission at 382 nm, a signature of good crystallinity, with a weak and broad orange-red emission, which is typically attributed to the oxygen interstitials, in the range between 520 and 720 nm. Other than the second order feature of the band edge emission at 760 nm, no red or near-infrared bands are observed. The effect of precursor concentration on the morphological, structural and PL properties are studied, and the results are discussed.