1. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions
- Author
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Larysa Tryputen, Paul M. Voyles, Patricio Vargas, Caroline A. Ross, Mukund Bapna, Hamid Almasi, Kun-Hua Tu, Congli Sun, Jason S. Tresback, Weigang Wang, Stephan K. Piotrowski, and Sara A. Majetich
- Subjects
010302 applied physics ,Materials science ,Magnetoresistance ,Condensed matter physics ,Spintronics ,Mechanical Engineering ,Demagnetizing field ,Bioengineering ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Scanning probe microscopy ,Nanolithography ,Mechanics of Materials ,0103 physical sciences ,Perpendicular ,General Materials Science ,Electrical and Electronic Engineering ,0210 nano-technology ,Lithography ,Nanopillar - Abstract
Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.
- Published
- 2016