1. Ge-Si-O phase separation and Ge nanocrystal growth in Ge:SiO(x)/SiO(2) multilayers--a new dc magnetron approach
- Author
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Alexander Nyrow, Metin Tolan, Christian Sternemann, Christoph J. Sahle, Johannes von Borany, Alexander Schwamberger, Arndt Mücklich, and Manuel Zschintzsch
- Subjects
Materials science ,Ternary numeral system ,Absorption spectroscopy ,Annealing (metallurgy) ,Mechanical Engineering ,Analytical chemistry ,Bioengineering ,General Chemistry ,Sputter deposition ,symbols.namesake ,Nanocrystal ,Mechanics of Materials ,Cavity magnetron ,symbols ,General Materials Science ,Electrical and Electronic Engineering ,Raman spectroscopy ,Ternary operation - Abstract
Ge:SiOx /SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400 ◦ C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of
- Published
- 2011