1. Thermal stability of Al nanocluster arrays on Si (111)-7 × 7 surfaces
- Author
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Kazushi Miki, Run-Wei Li, J. H. G. Owen, and S. Kusano
- Subjects
Materials science ,Mechanical Engineering ,Diffusion ,Bioengineering ,General Chemistry ,Nanoclusters ,Metal ,Crystal ,Crystallography ,Mechanics of Materials ,visual_art ,Phase (matter) ,Atom ,visual_art.visual_art_medium ,General Materials Science ,Thermal stability ,Electrical and Electronic Engineering ,Vicinal - Abstract
By means of in situ high-temperature scanning tunnelling microscopy (STM), the thermal stability of highly ordered artificial Al nanocluster arrays, so-called two-dimensional nanocluster crystals, on vicinal Si (111)-7 × 7 surfaces has been investigated. It was found that Al nanocluster crystals are stable below 500 °C. Above 500 °C, the Al nanocluster crystal transforms into a surface phase with singular triangle shapes on down-terraces (the down-step side of a terrace). However, on up-terraces (the up-step side of a terrace), Al nanoclusters can move on Si (111)-7 × 7 surfaces over a large distance and the Al nanocluster crystal retracts toward the phase until the bare Si (111)-7 × 7 surface is completely recovered on up-terraces. The thermally activated motion of Al nanoclusters was not observed apparently below 400 °C, though Al nanocluster crystals can be formed even at 200 °C. This indicates that it is atom diffusion, not cluster diffusion, which is responsible for the formation process of metal cluster crystals on Si (111)-7 × 7 surfaces.
- Published
- 2006
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