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We observe, as a function of temperature, a second order magnetic phase transition in nanometric Cr2O3 clusters that are epitaxially embedded in an insulating MgO matrix. They are investigated through their tunnel magneto-resistance signature, the MgO layer being used as a tunnel barrier. We infer the small magnetic dipoles carried by the Cr2O3 clusters and provide evidence of a magnetic phase transition at low temperature in those clusters: they evolve from an anti ferromagnetic state, with zero net moment close to 0 K, to a weak ferromagnetic state that saturates above about 10 K. The influence of magneto-electric effects on the weak ferromagnetic phase is also striking: the second order transition temperature turns out to be linearly dependent on the applied electric field.

Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001). Ferromagnetic metals (Fe, Co, Fe20Ni80) were epitaxially grown on top of the MgO barrier, thus leading to monocrystalline electrodes on graphene. Structural and magnetic characterizations were performed on these ferromagnetic metals after annealing and dewetting: they form clusters with a 100 nm typical lateral width, which are mostly magnetic monodomains in the case of Fe. This epitaxial stack opens the way to graphene spintronic devices taking benefits from a coherent tunnelling current through the epitaxial MgO/graphene stack.