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Biotite, an iron-rich mineral belonging to the trioctahedral mica group, is a naturally abundant layered material (LM) exhibiting attractive electronic properties for application in nanodevices. Biotite stands out as a non-degradable LM under ambient conditions, featuring high-quality basal cleavage-a significant advantage for van der Waals heterostructure (vdWH) applications. In this work, we present the micro-mechanical exfoliation of biotite down to monolayers (1Ls), yielding ultrathin flakes with large areas and atomically flat surfaces. To identify and characterize the mineral, we conducted a multi-elemental analysis of biotite using energy-dispersive spectroscopy mapping. Additionally, synchrotron x-ray fluorescence and infrared nano-spectroscopy were employed to probe its iron content and vibrational signature in few-layer form, respectively, with sensitivity to the layer number. We have also observed good morphological and structural stability in time (up to 12 months) and no important changes in their physical properties after thermal annealing processes in ultrathin biotite flakes. Conductive atomic force microscopy evaluated its electrical capacity, revealing an electrical breakdown strength of approximately 1 V nm -1 . Finally, we explore the use of biotite as a substrate and encapsulating LM in vdWH applications. We have performed optical and magneto-optical measurements at low temperatures. We find that ultrathin biotite flakes work as a good substrate for 1L-MoSe 2 , comparable to hexagonal boron nitride flakes, but it induces a small change of the 1L-MoSe 2 g -factor values, most likely due to natural impurities on its crystal structure. Furthermore, our results show that biotite flakes are useful systems to protect sensitive LMs such as black phosphorus from degradation for up to 60 days in ambient air. Our study introduces biotite as a promising, cost-effective LM for the advancement of future ultrathin nanotechnologies., (© 2024 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.)

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 10 18 cm -3 to 3.3 ×10 18 cm -3 along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 10 17 cm -3 along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes., (© 2022 IOP Publishing Ltd.)

Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As 2 and As 4 , on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As 4 enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As 4 allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As 2 favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As 4, enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform.

Effective and controllable doping is instrumental for enabling the use of III-V semiconductor nanowires (NWs) in practical electronics and optoelectronics applications. To this end, dopants are incorporated during self-catalyzed growth via vapor-liquid-solid mechanism through the catalyst droplet or by vapor-solid mechanism of the sidewall growth. The interplay of these mechanisms together with the competition between axial elongation and radial growth of NWs can result in dopant concentration gradients along the NW axis. Here, we report an investigation of Be-doped p-type GaAs NWs grown by the self-catalyzed method on lithography-free Si/SiO x templates. The influence of dopant incorporation on the structural properties of the NWs is analyzed by scanning and transmission electron microscopy. By combining spatially resolved Raman spectroscopy and transport characterization, we are able to estimate the carrier concentration, mobility and resistivity on single-NW level. We show that Be dopants are incorporated predominantly by vapor-solid mechanism for low Be flux, while the relative contribution of vapor-liquid-solid incorporation is increased for higher Be flux, resulting in axial dopant gradients that depend on the nominal doping level.