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We report the Ag nanoparticles (NPs) embedded in LiTaO3 (AgNP:LT) by direct Ag+ ion implantation. Transmission electron microscope imaging indicates that the embedded Ag NPs have an average diameter of 3.65 nm. The linear optical absorption spectrum of AgNP:LT peaking at 477 nm is observed owing to the typical effect of localized surface plasmon resonance. Z-scan investigation shows ultrafast saturable absorption of AgNP:LT at the near infrared 1 μm wavelength, which enables AgNP:LT to be a new saturable absorber (SA) for the generation of 1 μm Q-switched mode-locked pulsed laser with pulse duration of 35 ps and repetition rate of 8.74 GHz. This work not only opens a new way to tailor the nonlinearity of LiTaO3 by embedding Ag+ NPs, but also develops AgNP:LT as a new SA for ultrafast laser generation.

We report on the fabrication of reshaped Ag nanoparticles (NPs) embedded in a Nd:YAG crystal by combining Ag ion implantation and swift heavy Xe ion irradiation. The localized surface plasmon resonance (LSPR) effect is proved to be efficiently modulated according to the phenomenon of polarization-dependent absorption. The LSPR peak located at 448 nm shows red shift and blue shift at 0° and 90° polarization, respectively, which is in good agreement with calculation by discrete dipole approximation. Based on the near-field intensity distribution, the interaction between reshaped NPs shows a non-ignorable effect on the optical absorption. Furthermore, the polarization-dependence of the photoluminescence (PL) intensity is analyzed, which is positively related to the modulated LSPR absorption. It demonstrates the potential of the enhancement of PL intensity by embedded plasmonic Ag NPs. This work breaks the conventional view of the quenching effect of NPs by ion irradiation and opens a new way to realize the modulation of optical dichroism.

Here we reported the fabrication of tungsten oxide (WO3−x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

Control of the plasmon-driven chemical reaction for the transformation of 4-nitrobenzenethiol to p,p'-dimercaptoazobenzene by Ag nanoparticle arrays was studied. The Ag nanoparticle arrays were fabricated by means of nanosphere lithography. By changing the PS particle size, the localized surface plasmon resonance (LSPR) peaks of the Ag nanoparticle arrays can be tailored from 460 to 560 nm. The controlled reaction process was monitored by in situ surface-enhanced Raman scattering. The reaction can be dramatically influenced by varying the duration of laser exposure, Ag nanoparticle size, laser power and laser excitation wavelength. The maximum reaction speed was achieved when the LSPR wavelength of the Ag nanoparticle arrays matched the laser excitation wavelength. The experimental results reveal that the strong LSPR can effectively drive the transfer of the 'hot' electrons that decay from the plasmon to the reactants. The experimental results were confirmed by theoretical calculations.

Zinc oxide single-crystal films are prepared by the oxidation of zinc-implanted sapphire at 700 °C for 2 h in oxygen ambient. The cross-section transmission electron microscopy image and the selected-area electron diffraction (SAED) pattern show that ZnO single-crystal films are formed on the surface of the zinc-implanted sapphire substrate. The quality and excitonic properties of the single-crystal ZnO films are studied through absorption spectra, the photoluminescence spectra and resonant Raman spectrum. The mechanisms for the formation of single-crystal ZnO films are discussed.

We report the formation of embedded ZnO quantum dots (QDs) by Zn and F ion sequential implantation and subsequent annealing. Optical absorption and photoluminescence spectrum measurements, transmission electron microscopy bright field images and selected area electron diffraction patterns indicate that ZnO QDs were formed after annealing in air or vacuum at temperatures higher than 500 °C. Atomic force microscopy images show a comparatively flat surface of the annealed samples, which indicates that only very few Zn atoms are evaporated to the surfaces. The formation of ZnO QDs during the thermal annealing can be attributed to the direct oxidization of Zn nanoparticles by the oxygen molecules in the substrate produced during the implantation of F ions. The quality of ZnO QDs increases with the increase of annealing temperature.

We have reported that the Ag nanostructure-based substrate is particularly suitable for surface-enhanced Raman scattering when it is coated with monolayer graphene, an optically transparent and chemistry-inertness material in the visible range. Ag bowtie nanoantenna arrays and Ag nanogrids were fabricated using plasma-assisted nanosphere lithography. Our measurements show that atmospheric sulfur containing compounds are powerless to break in the monolayer graphene to vulcanize the surfaces of the Ag bowtie nanoantenna arrays and Ag nanogrids by various means, including scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). Furthermore, the Ag nanostructure substrate coated with the monolayer graphene film shows a larger enhancement of Raman activity and the electromagnetic field than the uncoated substrate. Compared with those of bare Ag nanostructures, the averaged EFs of graphene-film-coated Ag nanostructures were estimated to be about 21 and 5 for Ag bowtie nanoantenna arrays and nanogrids after one month later in air, respectively. These observations are further supported by theoretical calculations.

We report a new, novel and universal method to fabricate high-quality titanium dioxide (TiO2) nanofilms on different substrates by a solid phase growth process of ion implantation and subsequent annealing in oxygen atmosphere. Ti ions were implanted into fused silica, soda lime glass, Z-cut quartz, or (0001) α-sapphire by a metal vapor vacuum arc (MEVVA) ion source implanter to fluences of 0.75, 1.5 and 3 × 10(17) ions cm(-2) with a nominal accelerating voltage of 20 kV. To understand the influence of the annealing temperature, time, and substrate on the formation and phase transformation of the TiO2 nanofilms, the Ti-ion-implanted substrates were annealed in oxygen atmosphere from 500 to 1000 °C for 1-6 h. The formation of TiO2 nanofilms resulted from the slow out-diffusion of implanted Ti ions from the substrates which were then oxidized at the surfaces. The thickness and phase of the nanofilms can be tailored by controlling the implantation and annealing parameters. Since the TiO2 nanofilms are formed under high temperature and low growth rate, they show good crystallinity and antibacterial properties, with good film adhesion and stability, suggesting that the TiO2 nanofilms formed by this method have great potential in applications such as antibacterial and self-cleaning transparent glass.

Zn ions were implanted at 160 keV into silica at a dose of 2 × 1017 ions cm−2. Cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy studies show that a film of ZnO nanoclusters was formed after the implanted sample was annealed at 700 °C in air. With the increase in annealing temperature to 750 °C, a single-crystal ZnO film was fabricated. The mechanisms for the formation of single-crystal ZnO films are discussed. The optical absorption and PL spectra of ZnO films are also studied.