Search

Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided. [ABSTRACT FROM AUTHOR]

Carbon nanotube (CNT) materials show large degradation in tensile strength when they are exposed in chemically active environments due to the loss of inter-tube bonding. Here, we report the suppression of such degradation by chemical vapor infiltration of amorphous carbon into CNT films. The amorphous carbon generated by the thermal decomposition of the gaseous hydrocarbon of acetylene is firmly bonded on the CNT sidewalls and intersections. Based on the improved inter-tube bonding and restriction of inter-tube sliding, the tensile strength of the film is improved to be 3 times of the original level. More importantly, the bonding is so strong and stable that the high tensile strength remains with little loss even in harsh wet environments such as boiling alcoholic, acidic, alkaline solutions and seawater. Such harsh environments-tolerant properties, which were rarely observed before, could open new windows for the CNT/C composite material to be applied from functional devices to structural components under extreme corrosive conditions. [ABSTRACT FROM AUTHOR]

A novel defect control approach based on laminated HfO2/ZrO2 with multifunctional TiN/Mo/TiO x N y electrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface reduces leakage current and prolong the endurance up to 1011 cycles while retaining a 2Pr value of 34 (μ C cm–2) at 3.4 MV cm−1. Using first-principles calculations and experiments, we demonstrate that the enhancement of endurance is ascribed to the higher migration barrier of oxygen vacancies within the laminated HZO film and higher work function of MoO x /TiO x N y between top electrode and the insulating oxide. This 2.5 nm thick TiO x N y barrier further increase the grain size of HZO, lowering the activation field and thus improving polarization reversal speed. This interfacial layer further decreases the overall capacitance, increases the depolarization field, thereby enhancing the data retention. By fitting the data using the Arrhenius equation, we demonstrate a 10 years data retention is achieved at 109.6 °C, surpassing traditional SS-HZO of 78.2 °C with a 450 °C rapid thermal annealing (required by backend-of-the-line). This work elucidates that interfacial engineering serves as a crucial technology capable of resolving the endurance, storage capability, and high-temperature data retention issues for ferroelectric memory. [ABSTRACT FROM AUTHOR]