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Your search keyword '"Alexander N. Smirnov"' showing total 2 results
Start Over Author "Alexander N. Smirnov" Journal nanotechnology
2 results on '"Alexander N. Smirnov"'

1. Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres

Author

Sergey A. Grudinkin, Valery Yu. Davydov, Valery G. Golubev, Mikhail A. Baranov, N. A. Feoktistov, and Alexander N. Smirnov

Subjects
Photoluminescence, Materials science, Silicon, Material properties of diamond, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Chemical vapor deposition, engineering.material, 01 natural sciences, symbols.namesake, Etching (microfabrication), 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Reactive-ion etching, 010306 general physics, business.industry, Mechanical Engineering, Diamond, General Chemistry, 021001 nanoscience & nanotechnology, chemistry, Mechanics of Materials, engineering, symbols, Optoelectronics, 0210 nano-technology, business, Raman spectroscopy
Abstract

Nanodiamonds with the 'diamond' 1332.5 cm(-1) Raman line as narrow as 1.8 cm(-1) have been produced by reactive ion etching in oxygen plasma of heteroepitaxial diamond particles grown by microwave plasma enhanced chemical vapour deposition (MWPECVD) on silicon. After the etching, a doublet is recorded in the zero-phonon line photoluminescence spectra of an ensemble of silicon-vacancy (SiV) centres at 10 K. Each line of the doublet is split into two lines corresponding to the optical transitions between the split excited and ground energy levels of the SiV centres. These Raman and photoluminescent features have been observed previously only in low-strain homoepitaxial diamond films and single-crystal diamond.

Published
2016

2. Unified mechanism of the surface Fermi level pinning in III-As nanowires.

Author

Prokhor A Alekseev, Mikhail S Dunaevskiy, George E Cirlin, Rodion R Reznik, Alexander N Smirnov, Demid A Kirilenko, Valery Yu Davydov, and Vladimir L Berkovits

Subjects
GALLIUM arsenide, REACTION mechanisms (Chemistry), NANOWIRES
Abstract

Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary AlxGa1−xAs (0 ≤ x ≤ 0.45) and GaxIn1−xAs (0 ≤ x ≤ 1) alloys is pinned at the same position of 4.8 ± 0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the AlxGa1−xAs and GaxIn1−xAs nanowires leads to the accumulation of an excess of arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires. [ABSTRACT FROM AUTHOR]

Published
2018
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