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Lithium-sulfur (Li-S) batteries have gained considerable attention for high theoretical specific capacity and energy density. However, their development is hampered by the poor electrical conductivity of sulfur and the shuttle of polysulfides. Herein, the acidified bamboo-structure carbon nanotubes (BCNTs) were mixed with polyvinylidene difluoride and pyrolyzed at high-temperature to obtain the fluorinated bamboo-structure carbon nanotubes (FBCNTs), which were compounded with sulfur as the cathode. The prepared S@FBCNTs with sulfur loading reaching 74.2 wt.% shows a high initial specific capacity of 1407.5 mAh·g -1 at the discharge rate of 0.1 C. When the discharge rate was increased to 5 C, the capacity could be maintained at 622.3 mAh·g -1 . The electrical conductivity of carbon nanotubes is effectively improved by semi-ionic C-F bonds formed by the doped F atoms and carbon atoms. Simultaneously, the surface of the F-containing carbon tubes exhibits strong polarity and strong chemisorption effect on polysulfides, which inhibits the shuttle effect of Li-S batteries., (© 2023 IOP Publishing Ltd.)

Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS 2 has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS 2 film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS 2 field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (10 8 ), large average mobility (∼8.56 cm 2 V -1 s -1 ), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS 2 , in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics., (© 2023 IOP Publishing Ltd.)

With the recent discovery of three dimensional Dirac semimetals, their integrations with the optoelectronic devices allow the novel optical effects and functionalities. Here, we theoretically report the photonic spin Hall effect in a periodic structure, where three dimensional Dirac semimetals and the dielectric materials are assembled into the stack. The incident angle and frequency dependent spin shift spectrum reveals that the spin shifts of the transmitted wave in this structure emerge the obvious peaks and valleys for the horizontal polarized wave and their magnitudes and positions display a distinct dependence on the incident angle around the specific frequency. These observations originate from its zero value of the effective perpendicular permittivity and its greatly reduced transmission in the multilayered structure, whose mechanism is different from those in the previous works. Moreover, both the peaks and valleys of the transmitted spin shift are significantly sensitive to the Fermi energy of three dimensional Dirac semimetals, whose magnitudes and positions can be tuned by varying it. Our results highlight the vital role of three dimensional Dirac semimetals in their applications of the spin photonic devices and pave the way to explore the tunable photonic spin Hall effect by engineering their Fermi energies., (© 2022 IOP Publishing Ltd.)

Negative refraction materials are indispensable building blocks in the optoelectric devices for their unique functionalities of controlling the light propagations, such as, superlens and transformation optics. However, material realizations of negative refraction are still limited to the conventional metals, semiconductors as well as magnetic materials. Here, we show that three dimensional Dirac semimetals have the opportunity to enable the negative refraction, which can be achieved through alternatively stacking three dimensional Dirac semimetals and the dielectric layers together. It is found that the effective perpendicular and parallel permittivities in this multilayered stack display the respective negative and positive values over a certain frequency region, which enables its negative group refractive angle and it can be controlled by the Fermi energy of Dirac semimetals. The spectra of transmittance in the multilayered structure for transverse magnetic wave also reveals an incident angle-independent transmittance dip, which originates from the zero value of the real part of the effective perpendicular permittivity. Our findings unveil the essential role of three dimensional Dirac semimetals in producing the negative group refraction responses and promise their applications in the metamaterial-based devices., (© 2022 IOP Publishing Ltd.)

Until now, the growth of periodic vertically aligned multi-walled carbon nanotube (VA-MWCNT) arrays was dependent on at least one lithography step during fabrication. Here, we demonstrate a lithography-free fabrication method to grow hexagonal arrays of self-standing VA-MWCNTs with tunable pitch and MWCNT size. The MWCNTs are synthesized by plasma enhanced chemical vapor deposition (PECVD) from Ni catalyst particles. Template guided dewetting of a thin Ni film on a hexagonally close-packed silica particle monolayer provides periodically distributed Ni catalyst particles as seeds for the growth of the periodic MWCNT arrays. The diameter of the silica particles directly controls the pitch of the periodic VA-MWCNT arrays from 600 nm to as small as 160 nm. The diameter and length of the individual MWCNTs can also be readily adjusted and are a function of the Ni particle size and PECVD time. This unique method of lithography-free growth of periodic VA-MWCNT arrays can be utilized for the fabrication of large-scale biomimetic materials., (© 2021 IOP Publishing Ltd.)