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Abstract Thin-walled, open-ended, and well-aligned N-doped carbon nanotubes (CNTs) on the quartz slides were synthesized by using acetonitrile as carbon sources. As-obtained products possess large thin-walled index (TWI, defined as the ratio of inner diameter and wall thickness of a CNT). The effect of temperature on the growth of CNTs using acetonitrile as the carbon source was also investigated. It is found that the diameter, the TWI of CNTs increase and the Fe encapsulation in CNTs decreases as the growth temperature rises in the range of 780–860°C. When the growth temperature is kept at 860°C, CNTs with TWI = 6.2 can be obtained. It was found that the filed-emission properties became better as CNT growth temperatures increased from 780 to 860°C. The lowest turn-on and threshold field was 0.27 and 0.49 V/μm, respectively. And the best field-enhancement factors reached 1.09 × 105, which is significantly improved about an order of magnitude compared with previous reports. In this study, about 30 × 50 mm2 free-standing film of thin-walled open-ended well-aligned N-doped carbon nanotubes was also prepared. The free-standing film can be transferred easily to other substrates, which would promote their applications in different fields.

Abstract Sulfur (S) is introduced as an additive in the growth atmosphere of carbon nanotubes (CNTs) in the range of 940-1020°C. CNT products with distorted sidewalls can be obtained by S-assisted growth. Moreover, many fascinating CNT structures can also be found in samples grown with S addition, such as bamboo-like CNTs, twisted CNTs, arborization-like CNTs, and bead-like CNTs. Compared with CNTs grown without S, more nitrogen-doping content is achieved in CNTs with S addition, which is beneficial for the properties and applications of nitrogen-doped CNTs. In addition, S can also enhance the encapsulation of ferromagnetic materials and thus improve the soft magnetic properties of CNTs, which is favorable to the applications of CNTs in the electromagnetic wave-absorbing and magnetic data storage areas.