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A graphene-loaded metamaterial absorber is investigated in the mid-infrared region. The light-graphene interaction is greatly enhanced by virtue of the coupled resonance through a cross-shaped slot. The absorption peaks show a significant blueshift with increasing Fermi level, enabling a wide range of tunability for the absorber. A simple circuit model well explains and predicts this modulation behavior. Our proposal may find applications in a variety of areas such as switching, sensing, modulating, and biochemical detecting. Electronic supplementary material The online version of this article (10.1186/s11671-019-2852-y) contains supplementary material, which is available to authorized users.

Ag50Cu50 films were deposited on glass substrates by a sputtering system. Effects of accumulated energy on nanoparticle formation in pulse-laser dewetting of AgCu films were investigated. The results showed that the properties of the dewetted films were found to be dependent on the magnitude of the energy accumulated in the film. For a low energy accumulation, the two distinct nanoparticles had rice-shaped/Ag60Cu40 and hemispherical/Ag80Cu20. Moreover, the absorption spectra contained two peaks at 700 nm and 500 nm, respectively. By contrast, for a high energy accumulation, the nanoparticles had a consistent composition of Ag60Cu40, a mean diameter of 100 nm and a peak absorption wavelength of 550 nm. Overall, the results suggest that a higher Ag content of the induced nanoparticles causes a blue shift of the absorption spectrum, while a smaller particle size induces a red shift.

Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga2O3) ultraviolet photodetectors on the sapphire substrate are investigated. The grain size of poly-Ga2O3 becomes larger with the post annealing temperature (PAT) increasing from 800 °C to 1000 °C, but it gets smaller with further raising PAT to 1100 °C. A blue shift is observed at the absorption edge of the transmittance spectra of Ga2O3 on sapphire as increasing PAT, due to the incorporation of Al from the sapphire substrate into Ga2O3 to form (AlxGa1–x)2O3. The high-resolution X-ray diffraction and transmittance spectra measurement indicate that the substitutional Al composition and bandgap of (AlxGa1–x)2O3 annealed at 1100 °C can be above 0.30 and 5.10 eV, respectively. The Rmax of the sample annealed at 1000 °C increases about 500% compared to the as-deposited device, and the sample annealed at 1000 °C has short rise time and decay time of 0.148 s and 0.067 s, respectively. This work may pave a way for the fabrication of poly-Ga2O3 ultraviolet photodetector and find a method to improve responsivity and speed of response.

The optical properties of aluminum-doped zinc oxide (AZO) thin films were calculated rapidly and accurately by point-by-point analysis from spectroscopic ellipsometry (SE) data. It was demonstrated that there were two different physical mechanisms, i.e., the interfacial effect and crystallinity, for the thickness-dependent permittivity in the visible and infrared regions. In addition, there was a blue shift for the effective plasma frequency of AZO when the thickness increased, and the effective plasma frequency did not exist for AZO ultrathin films (

This report mainly focuses on the investigation of morphological, optical, and electrical properties of Al2O3/ZnO nanolaminates regulated by varying bilayer thicknesses. The growth mechanism of nanolaminates based on atomic layer deposition and Al penetration into ZnO layer are proposed. The surface roughness of Al2O3/ZnO nanolaminates can be controlled due to the smooth effect of interposed Al2O3 layers. The thickness, optical constants, and bandgap information of nanolaminates have been investigated by spectroscopic ellipsometry measurement. The band gap and absorption edge have a blue shift with decreasing the bilayer thickness on account of the Burstein-Moss effect, the quantum confinement effect and the characteristic evolution of nanolaminates. Also, the carrier concentrations and resistivities are found to be modified considerably among various bilayer thicknesses. The modulations of these properties are vital for Al2O3/ZnO nanolaminates to be used as transparent conductor and high resistance layer in optoelectronic applications.

Semiconductor quantum dots (QDs) are widely used in light-emitting diodes and solar cells. Electrochemical modulation is a good way to understand the electrical and optical properties of QDs. In this work, the effects of electrochemical control on photoluminescence (PL) spectra in core/shell CdSe/ZnS QD films are studied. The results show different spectral responses for surface emission and core emission when a negative electrochemical potential is applied: the core emission is redshifted while the surface emission is blueshifted. The former is attributed to the electrostatic expansion of the excitonic wave function, due to the asymmetric distribution of adsorbed cations on the surface of the dots. The latter is attributed to the occupation of lower surface states by the injected electrons, i.e., the photoexcited electrons are more likely to be trapped onto higher surface states, leading to a blueshift of the surface emission. Both the spectral shift and the accompanying PL-quenching processes are reversible by resetting the potential.

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched\ud InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature,\ud interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth\ud (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with\ud the laser excitation intensity increasing four orders in magnitude. The 7-nm QW PL also has a larger blueshift\ud and FWHM variation than the 15-nm QW as the temperature increases from 10 to ~50 K. Finally, simulations\ud of this system which correlate with the experimental observations indicate that a thin QW must be more affected by\ud interface fluctuations and their resulting potential fluctuations than a thick QW. This work provides useful information\ud on guiding the growth to achieve optimized InGaAs/InAlAs QWs for applications with different QW thicknesses.

Plasmonically induced transparency (PIT) in a multicavity-coupled graphene-based waveguide system is investigated theoretically and numerically. By using the finite element method (FEM), the multiple mode effect can be achieved, and blue shift is exhibited by tunable altering the chemical potential of the monolayer graphene. We find that the increasing number of the graphene rectangle cavity (GRC) achieves the multiple PIT peaks. In addition, we find that the PIT peaks reduce to just one when the distance between the third cavity and the second one is 100 nm. Easily to be experimentally fabricated, this graphene-based waveguide system has many potential applications for the advancement of 3D ultra-compact, high-performance, and dynamical modulation plasmonic devices.

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications. Electronic supplementary material The online version of this article (doi:10.1186/s11671-016-1625-0) contains supplementary material, which is available to authorized users.

Au@Cu2O cuboctahedron with gold triangular nanoplate core and Cu2O shell was synthesized by a chemical method. X-ray diffraction (XRD) and transmission electron microscopy (TEM) tests demonstrated that the as-synthesis samples were consisted of gold triangular nanoplate core and Cu2O shell, and both of them were in good crystallization. The effective size control of the particles could be realized by controlling the amount of Au cores added in the synthetic process and Au@Cu2O particles with different shell thickness could be synthesized. The decrease of Cu2O shell thickness had a great difference in the optical performance, including blue shift of the resonant peaks and enhanced absorption intensity. The growth process from rough sheet structure to cuboctahedron was also explored. The results of photocatalytic degradation experiment showed that Au@Cu2O particles showed much better photocatalytic performance than that of pure Cu2O. The improved photocatalytic property of the Au@Cu2O particles was attributed to the comprehensive effect of the enhanced visible-light absorption and high separation rate of electron-hole pairs. Electronic supplementary material The online version of this article (doi:10.1186/s11671-016-1603-6) contains supplementary material, which is available to authorized users.

Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

The excitation and absorption properties of grating coupled graphene surface plasmons were studied. It was found that whether a mode can be excited is mainly determined by the frequency of incident light and the duty ratio of gratings. In the structure consisting graphene bilayer, a blueshift of the excitation frequency existed when the distance between neighbor graphene layer were decreased gradually. In graphene-grating multilayer structures, a strong absorption (approximately 90% at maximum) was found in near-THz range.

Both blue- and redshifts of resonant modes are observed in the rolled-up Y2O3/ZrO2 tubular microcavity during a conformal oxide coating process. Our investigation based on spectral analyses suggests that there are two competitive processes during coating: desorption of both chemically and physically absorbed water molecules and increase of the tube wall thickness. The redshift is due to the increase of the wall thickness and corresponding light confinement enhancement. On the other hand, desorption of water molecules by heating leads to a blueshift. The balance of these two factors produces the observed bi-directional shift of the modes while they both contribute to promoted quality factor after coating.

This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.

Structural, compositional, morphological, and optical properties of silicon nanocrystal (Si-nc) embedded in a matrix of non-stoichiometric silicon oxide (SiOx) films were studied. SiOx films were prepared by hot filament chemical vapor deposition technique in the 900 to 1,400°C range. Different microscopic and spectroscopic characterization techniques were used. The film composition changes with the growth temperature as Fourier transform infrared spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy reveal. High-resolution transmission electron microscopy supports the existence of Si-ncs with a diameter from 1 to 6.5 nm in the matrix of SiOx films. The films emit in a wide photoluminescent spectrum, and the maximum peak emission shows a blueshift as the growth temperature decreases. On the other hand, transmittance spectra showed a wavelength shift of the absorption border, indicating an increase in the energy optical bandgap, when the growth temperature decreases. A relationship between composition, Si-nc size, energy bandgap, PL, and surface morphology was obtained. According to these results, we have analyzed the dependence of PL on the composition, structure, and morphology of the Si-ncs embedded in a matrix of non-stoichiometric SiOx films.

This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrodinger equation; the results of calculations give a reasonable explanation of the experimental data.

InAs quantum dots (QDs) grown on InGaAs cross-hatch pattern (CHP) by molecular beam epitaxy are characterized by photoluminescence (PL) at 20 K. In contrast to QDs grown on flat GaAs substrates, those grown on CHPs exhibit rich optical features which comprise as many as five ground-state emissions from [1-10]- and [110]-aligned QDs, two wetting layers (WLs), and the CHP. When subject to in situ annealing at 700°C, the PL signals rapidly degrades due to the deterioration of the CHP which sets the upper limit of overgrowth temperature. Ex situ hydrogen annealing at a much lower temperature of 350°C, however, results in an overall PL intensity increase with a significant narrowing and a small blueshift of the high-energy WL emission due to hydrogen bonding which neutralizes defects and relieves associated strains.

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity.

A simple and mild wet-chemical approach was developed for the synthesis of one-dimensional (1D) In(OH)3 nanostructures. By calcining the 1D In(OH)3 nanocrystals in air at 250 °C, 1D In2O3 nanocrystals with the same morphology were obtained. TEM results show that both 1D In(OH)3 and 1D In2O3 are composed of uniform nanotube bundles. SAED and XRD patterns indicate that 1D In(OH)3 and 1D In2O3 nanostructures are single crystalline and possess the same bcc crystalline structure as the bulk In(OH)3 and In2O3, respectively. TGA/DTA analyses of the precursor In(OH)3 and the final product In2O3 confirm the existence of CTAB molecules, and its content is about 6%. The optical absorption band edge of 1D In2O3 exhibits an evident blueshift with respect to that of the commercial In2O3 powders, which is caused by the increasing energy gap resulted from decreasing the grain size. A relatively strong and broad purple-blue emission band centered at 440 nm was observed in the room temperature PL spectrum of 1D In2O3 nanotube bundles, which was mainly attributed to the existence of the oxygen vacancies.

With air-stable and generic reagents, CdSe nanocrystals with tunable morphologies were prepared by controlling the temperature in the solution reaction route. Thereinto, the lower reaction temperature facilitates the anisotropic growth of crystals to obtain high-yield CdSe ring- and tribulus-shaped nanocrystals with many branches on their surfaces. The photoluminescence properties are sensitive to the nature of particle and its surface. The products synthesized at room temperature, whose surfaces have many branches, show higher blue shift and narrower emission linewidths (FWHM) of photoluminescence than that of samples prepared at higher temperature, whose surfaces have no branches. Microstructural studies revealed that the products formed through self-assembly of primary crystallites. Nanorings formed through the nonlinear attachment of primary crystallites, and the branches on the surfaces grew by linear attachment at room temperature. And the structure of tribulus-shaped nanoparticle was realized via two steps of aggregation, i.e., random and linear oriented aggregation. Along with the elevation of temperature, the branches on nanocrystal surfaces shortened gradually because of the weakened linear attachment. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1007/s11671-009-9265-2) contains supplementary material, which is available to authorized users.

Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined in terms of a self-consistent approach including excitonic effects. This analysis shows that the main contribution to the blueshift originates from the well region rather than the variation of triangular potentials formed in the barrier region. The power law for the blueshift, ΔEPL ∝ Plaserm, from m = 1/2 for lower excitation Plaser to m = 1/4 for higher excitation, is obtained from the calculated results combined with a rate equation analysis, which also covers the previously believed m = 1/3 power law within a limited excitation range. The present power law is consistent with the blueshift observed in a GaAsSb/GaAs quantum well.

ZnO nanoparticle array has been fabricated on the Si substrate by a simple thermal chemical vapor transport and condensation without any metal catalysts. This ZnO nanoparticles array is constructed from ZnO quantum dots (QDs), and half-embedded in the amorphous silicon oxide layer on the surface of the Si substrate. The cathodoluminescence measurements showed that there is a pronounced blue-shift of luminescence comparable to those of the bulk counterpart, which is suggested to originate from ZnO QDs with small size where the quantum confinement effect can work well. The fabrication mechanism of the ZnO nanoparticle array constructed from ZnO QDs was proposed, in which the immiscible-like interaction between ZnO nuclei and Si surface play a key role in the ZnO QDs cluster formation. These investigations showed the fabricated nanostructure has potential applications in ultraviolet emitters.

This paper reports a study of photooxidation and photomodification processes of the CdTe/CdS quantum dots embedded in a polymer matrix under ambient condition. During the first few minutes of irradiation, the quasi-inverse increase in photoluminescence intensity has been observed indicating the passivation of the nanocrystal surface traps by water molecules. A prolonged irradiation of the polymer film containing CdTe/CdS quantum dots leads to a significant decrease in the photoluminescence intensity together with the “blue shift” of the photoluminescence peak energy associated with quantum dot photooxidation. The mechanisms of the CdTe/CdS core/shell quantum dot photooxidation and photomodification in a polymer matrix are discussed. We have found a correlation between the photostability of the quantum dots and the CdS shell thickness as well as the ratio of core elements.

The surface plasmon effects on near-field diffraction for polychromatic light are studied. An Au-double-slit is used as the model and Fresnel integral is employed to perform the theoretic analysis. The results are illustrated with numerical examples and they show that, compared with the normal double-slit, the plasmon effect changes the spectral shift from redshift to blueshift and also enhances the intensity peak. This effect can be used in optical data transmission or specific spectral selectors.

Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.

In recent years, zinc oxide (ZnO) has become one of the most popular research materials due to its unique properties and various applications. ZnO is an intrinsic semiconductor, with a wide bandgap (3.37 eV) and large exciton binding energy (60 meV) making it suitable for many optical applications. In this experiment, the simple hydrothermal method is used to grow indium-doped ZnO nanostructures on a silicon wafer, which are then annealed at different temperatures (400°C to 1,000°C) in an abundant oxygen atmosphere. This study discusses the surface structure and optical characteristic of ZnO nanomaterials. The structure of the ZnO nanostructures is analyzed by X-ray diffraction, the superficial state by scanning electron microscopy, and the optical measurements which are carried out using the temperature-dependent photoluminescence (PL) spectra. In this study, we discuss the broad peak energy of the yellow-orange emission which shows tendency towards a blueshift with the temperature increase in the PL spectra. This differs from other common semiconductors which have an increase in their peak energy of deep-level emission along with measurement temperature.

Abstract The linear and nonlinear intraband optical absorption coefficients in GaAs three-dimensional single quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and electric field, applied along the growth direction of the heterostructure, the energies of the ground and first excited states of a donor impurity have been found using the effective mass approximation and a variational method. The energies of these states are examined as functions of the dimensions of the structure, electric field, and hydrostatic pressure. We have also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as a function of incident photon energy for several configurations of the system. It is found that the variation of distinct sizes of the structure leads to either a redshift and/or a blueshift of the resonant peaks of the intraband optical spectrum. In addition, we have found that the application of an electric field leads to a redshift, whereas the influence of hydrostatic pressure leads to a blueshift (in the case of on-ring-center donor impurity position) of the resonant peaks of the intraband optical spectrum.