Search

The non-catalytic preparation of high-quality vertical graphene nanowalls (VGN) and graphene-based high output power hydrovoltaic effect power generation devices has always been difficult to achieve. In this work, we successfully prepared VGN with defect density, few layers and submicron domain size on a variety of substrates without catalysts through reasonable adjustment of growth conditions by the hot-wire chemical vapor deposition (HWCVD) method. The Raman test of the VGN prepared under optimal conditions showed that its

Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying ratio of working-gases. Edge directions were determined with the help of both moir\'e pattern and atomic-resolution image obtained via atomic force microscopy measurement. It is believed that the variation on graphene edges mainly attributes to different growth rates of armchair and zigzag edges. This work demonstrated here points out a potential approach to fabricate graphene ribbons on h-BN., Comment: 7 pages, 4 figures

In this paper, we systematically studied the effects of coronene as nucleation seeds for graphene synthesis at low temperatures by chemical vapor deposition. Naphthalene was used as a solid carbon source which is capable of producing graphene at temperatures down to 300 °C. The experimental results showed clear evidence that coronene seeds work as preferred nucleation sites, through which the nucleation density and graphene domain size could be modulated. The introduction of the seeds greatly improved the homogeneity of monolayer graphene by suppressing uncontrolled nucleation and multilayer growth of graphene domains. The obtained carrier mobility of graphene fabricated at 400 °C by the seed-assisted process reached ~912 cm(2) V(-1) s(-1), which is considerably higher than that of ~300 cm(2) V(-1) s(-1) measured on graphene prepared without seeding. Besides offering cost advantages for large scale application, the technique proposed in this study may find significant applications in graphene/copper hybrid interconnects and graphene based flexible electronics.