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We have investigated the optical absorption of metallic and semiconducting carbon nanotubes/CH 3 NH 3 PbI 3 micro- and nanowire composites. Upon visible light illumination semiconducting carbon nanotube based samples show a photo-induced doping, originating from the charge carriers created in the perovskite while this kind of change is absent in the composites containing metallic nanotubes, due to their strikingly different electronic structure. The response in the nanotubes shows, beside a fast diffusion of photo-generated charges, a slow component similar to that observed in pristine CH 3 NH 3 PbI 3 attributed to structural rearrangement, and leading to slight, light induced changes of the optical gap of the perovskite. This charge transfer from the illuminated perovskite confirms that carbon nanotubes (especially semiconducting ones) can form efficient charge-transporting layers in the novel organometallic perovskite based optoelectronic devices.

Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH3NH3PbI3 nanowires (MAPbI3NWs). These devices represent light responsivities of R = 7.7 × 10(5) A W(-1) under low-lighting conditions in the nW mm(-2) range, unprecedented among CNT-based photodetectors. At high incident power (∼1 mW mm(-2)), light soaking results in a negative photocurrent, turning the device insulating. We interpret the phenomenon as a result of efficient free photoexcited charge generation and charge transfer of photoexcited holes from the perovskite to the carbon nanotube. The charge transfer improves conductance by increasing the number of carriers, but leaves electrons behind. At high illumination intensity their random electrostatic potential quenches mobility in the nanotube.