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Dye-sensitized solar cells (DSSCs) have attracted much attention as promising tools in renewable energy conversion technology. This is mainly because of their beneficial qualities, such as their impressive efficiency levels and low-cost fabrication techniques. An overview of MXene-modified electrodes in DSSCs is given in this review article. MXenes are two-dimensional (2D) transition metal carbides or nitrides with remarkable properties such as high conductivity and large surface area. MXenes' properties make them an appealing material for various applications, including energy storage, catalysis, and electronic devices. MXene integration enhances ion transport, dye adsorption, and charge transport in DSSC electrodes. In-depth analysis of the use of 2D Mxene and integration with carbon nanotubes (CNTs), reduced graphene oxide (rGO), 2D MoS 2 , and hybrids like 2D-2D heterostructures for electrode modification in photovoltaics (PVs), including anodes, photoanodes, composite decorated electrodes, counter electrodes (CEs), and electrolytes, is provided in this review article. The effects on the performance metrics of various deposition techniques are discussed and assessed. The use of MXene-modified electrodes in DSSCs suggests potential for enhancing the performance and efficiency of these solar cells in general. The article examines this strategy's potential advantages and implications, illuminating the fascinating advancements in the area and emphasizing MXenes' potential as a valuable substance for renewable energy applications. We also discuss the difficulties and potential benefits of using MXene-modified electrodes in DSSCs and emphasize the need for additional study to enhance stability, optimize MXene integration techniques, and enhance long-term device performance. The scalability and potential of MXene-based electrode modifications for commercial applications are also covered, addressing issues and prospects for the future, focusing on the necessity of more study. Electrodes modified with MXenes can improve DSSC performance and advance sustainable energy conversion.

Two-dimensional (2D) van der Waals (vdW) heterostructured transition metal dichalcogenides (TMDs) open up new possibilities for a wide range of optoelectronic applications. Interlayer couplings are responsible for several fascinating physics phenomena, which are in addition to the multifunctionalities that have been discovered in the field of optoelectronics. These couplings can influence the overall charge, or the energy transfer processes via stacking, separation, and dielectric angles. This focused review article summarizes the most recent and promising strategies for interlayer exciton emission in 2D or integrated perovskites and TMD heterostructures. These types of devices require a thorough comprehension and effective control of interlayer couplings in order to realize their functionalities and improve performance, which is demonstrated in this article with the energy or charge transfer mechanisms in the individual devices. An ideal platform for examining the interlayer coupling and the related physical processes is provided by a summary of the recent research findings in 2D perovskites and TMDs. Furthermore, it would encourage more investigation into the comprehension and regulation of excitonic effects and the related optoelectronic applications in vdW heterostructures over a broad spectral response range. Finally, the current challenges and prospects are summarized in this paper.

Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-power photovoltaic systems due to their unique optoelectronic properties. The 2D materials can be naturally thin, and their properties can be altered in a variety of ways. Therefore, these materials may be used to develop high-performance opto-spintronic and photovoltaic devices. The most recent and promising strategies were used to induce circular photo-galvanic effects (CPGEs) in 2D TMD materials with broken inversion symmetry. The majority of quantum devices were manufactured by mechanical exfoliation to investigate the electrical behavior of ultrathin 2D materials. The investigation of CPGEs in 2D materials could enable the exploration of spin-polarized optoelectronics to produce more energy-efficient computing systems. The current research on nanomaterial-based materials paves the way for developing materials to store, manipulate, and transmit information with better performance. Finally, this study concludes by summarizing the current challenges and prospects.

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe 2 ) for the development of phototransistors and switching photodiodes. Initially, we treated p-MoTe 2 in a N 2 environment under DUV irradiation and found that the p-type MoTe 2 changed to n-type MoTe 2 . However, the treated devices exhibited environmental stability over a long period of 60 days. Kelvin probe force microscopy (KPFM) measurements demonstrated that the values of the work function for p-MoTe 2 and n-MoTe 2 were ∼4.90 and ∼4.49 eV, respectively, which confirmed the carrier tunability. Also, first-principles studies were performed to confirm the n-type carrier polarity variation. Interestingly, the n-type MoTe 2 reversed its polarity to p-type after the irradiation of the devices under DUV in an O 2 environment. Additionally, a lateral homojunction-based p-n diode of MoTe 2 with a rectification ratio of ∼2.5 × 10 4 was formed with the value of contact potential difference of ∼400 mV and an estimated fast rise time of 29 ms and decay time of 38 ms. Furthermore, a well self-biased photovoltaic behavior upon illumination of light was achieved and various photovoltaic parameters were examined. Also, V OC switching behavior was established at the p-n diode state by switching on and off the incident light. We believe that this efficient and facile carrier polarity modulation technique may pave the way for the development of phototransistors and switching photodiodes in advanced nanotechnology.

Tunneling-based van der Waals (vdW) heterostructures composed of layered transition metal dichalcogenides (TMDs) are emerging as a unique compact system that provides new research avenues in electronics and optoelectronics. Here, we designed a black phosphorus (BP)/rhenium diselenide (ReSe2) and black phosphorus (BP)/hexagonal boron nitride (h-BN)/rhenium diselenide (ReSe2) vdW heterojunction-based diode and studied the tunneling-based different phenomena, such as rectification, negative differential resistance (NDR) and backward rectification. Further, we measured a gate-tunable and tunneling-based rectifying current in BP/ReSe2 and BP/h-BN/ReSe2 heterojunction diodes, and achieved the highest tunneling-based rectification ratio of up to (RR ≈ 3.4 × 107). The high rectifying current is explained using the Simmons-based approximation through direct tunneling (DT) and Fowler-Nordheim tunneling (FNT) in low and high bias regimes. Furthermore, we extracted the photoresponsivity (R ≈ 12 mA W-1) and external quantum efficiency (EQE ≈ 2.79%) under an illuminated laser light source of wavelength 532 nm. Finally, we demonstrated the potential application of our heterostructure devices, such as a binary inverter, rectifier and switching operation at a high frequency. Our tunneling-based heterostructure device could operate at frequencies up to the GHz range. Therefore, our findings provide a new paragon to use the TMD-based vdW heterostructure in electronic and optoelectronic applications, such as multi-valued logic.

TiO 2 nanomaterials have been widely used for anticancer drug carriers and UV/980 nm NIR triggered cancer synergistic platforms. However, traditional pure TiO 2 nanocarriers encounter some serious drawbacks, such as low drug loading ability, limited tissue penetration of UV light, and heating effect of 980 nm NIR on normal tissue, which obstruct their further application in cancer treatment. To overcome those challenges, novel mesoporous silica (mSiO 2 ) coated black TiO 2 core-shell nanocomposites are designed and constructed as doxorubicin carriers for 808 nm NIR triggered thermal imaging guided photothermal therapy combined chemotherapy of breast cancer. Properties of the nanocomposites such as micro-morphology, size, drug loading ability and release, targeting performance, and therapy efficiency in vitro and in vivo were evaluated. The results indicated the core-shell nanocomposites with dramatically increased loading ability were pH-responsive/NIR-accelerated doxorubicin release nanocarriers and showed synergistic breast cancer treatment in vitro and in vivo. This study verifies that the newly prepared mSiO 2 coated black TiO 2 core-shell nanocarriers can overcome the limitations of traditional TiO 2 nanocarriers and thus improve and broaden usage of TiO 2 nanoparticles in nanomedicine.

Improvement of the electrical and photoelectric characteristics is essential to achieve an advanced performance of field-effect transistors and optoelectronic devices. Here we have developed a doping technique to drastically improve electrical and photoelectric characteristics of single-layered, bi-layered and multi-layered WS2 field-effect transistors (FET). After illuminating with deep ultraviolet (DUV) light in a nitrogen environment, WS2 FET shows an enhanced charge carrier density, mobility and photocurrent response. The threshold voltage of WS2 FET shifted toward the negative gate voltage, and the positions of E and A1g peaks in Raman spectra shifted toward lower wavenumbers, indicating the n-type doping effect of the WS2 FET. The doping effect is reversible. The pristine characteristics of WS2 FET can be restored by DUV light illumination in an oxygen environment. The DUV-driven doping technique in a gas environment provides a very stable, effective, easily applicable way to enhance the performance of WS2 FET.