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Solving mathematical equations faster and more efficiently has been a Holy Grail for centuries for scientists and engineers across all disciplines. While electronic digital circuits have revolutionized equation solving in recent decades, it has become apparent that performance gains from brute-force approaches of compute-solvers are quickly saturating over time. Instead, paradigms that leverage the universes’ natural tendency to minimize a system’s free energy, such as annealers or Ising Machines, are being sought after due to favorable complexity scaling. Here, we introduce a programmable analog solver leveraging the formal mathematical equivalence between Maxwell’s equations and photonic circuitry. It features a mesh network of nanophotonic beams to find solutions to partial differential equations. As an example, we designed, fabricated, and demonstrated a novel application-specific photonic integrated circuit comprised of electro-optically reconfigurable nodes and experimentally validated 90 % accuracy with respect to a commercial solver. Finally, we tested this photonic integrated chip performance by simulating thermal diffusion on a spacecraft’s heat shield during re-entry to a planet’s atmosphere. The programmable light-circuitry presented herein offers a facile route for solving complex problems and thus will have profound potential applications across many scientific and engineering fields.

Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for sensing, imaging, communication, and optical computing systems to convert optical signals to electrical signals. Here we experimentally show a novel combination of topological insulators (TIs) and transition metal chalcogenides (TMDs) based self-powered photodetectors with ultra-low dark current and high sensitivity. The photodetector formed by a MoS2/Sb2Te3 heterogeneous junction exhibits a low dark current of 2.4 pA at zero bias and 1.2 nA at 1V. It shows a high photoresponsivity of >150 mA W−1 at zero bias and rectification of 3 times at an externally applied bias voltage of 1V. The excellent performance of the proposed photodetector with its innovative material combination of TMDs and TIs paves the way for the development of novel high-performance optoelectronic devices. The TIs/TMDs transfer used to form the heterojunction is simple to incorporate into on-chip waveguide systems, enabling future applications on highly integrated photonic circuits.

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable application-specific integrated circuits (ASICs) for machine learning and signal processing. However, both foundry-ready silicon-based modulators and conventional material-based devices utilizing lithium-niobate fall short in simultaneously providing high chip packaging density and fast speed. Current-driven ITO-based modulators have the potential to achieve both enabled by efficient light–matter interactions. Here, we introduce micrometer-compact Mach–Zehnder interferometer (MZI)-based modulators capable of exceeding 100 GHz switching rates. Integrating ITO-thin films atop a photonic waveguide, one can achieve an efficient VπL ${V}_{\pi }L$ = 0.1 V mm, spectrally broadband, and compact MZI phase shifter. Remarkably, this allows integrating more than 3500 of these modulators within the same chip area as only one single silicon MZI modulator. The modulator design introduced here features a holistic photonic, electronic, and RF-based optimization and includes an asymmetric MZI tuning step to optimize the extinction ratio (ER)-to-insertion loss (IL) and dielectric thickness sweep to balance the trade-offs between ER and speed. Driven by CMOS compatible bias voltage levels, this device is the first to address next-generation modulator demands for processors of the machine intelligence revolution, in addition to the edge and cloud computing demands as well as optical transceivers alike.

With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today’s optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into silicon- and nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter-to centimeter-scale footprints. The hunt for an electro-optic modulator that combines high speed, energy efficiency, and compactness to support high component density on-chip continues. Using a double-layer graphene optical modulator integrated on a Silicon photonics platform, we are able to achieve 60 GHz speed (3 dB roll-off), micrometer compactness, and efficiency of 2.25 fJ/bit in this paper. The electro-optic response is boosted further by a vertical distributed-Bragg-reflector cavity, which reduces the driving voltage by about 40 times while maintaining a sufficient modulation depth (5.2 dB/V). Modulators that are small, efficient, and quick allow high photonic chip density and performance, which is critical for signal processing, sensor platforms, and analog- and neuromorphic photonic processors.