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Considering the magnetic shielding requirements of both geomagnetic field and 50 Hz power-line frequency in the complex working conditions of the power grid, an electromagnetic shielding system combining active and passive modes is proposed in this article. A three-dimensional Helmholtz coil with a magnetic shielding barrel nested inside is established by the COMSOL simulation tool, and the magnetic shielding efficiency of the system is analyzed. Comparing different materials, the simulation results indicate that permalloy alloy exhibits better shielding performance than pure iron and nickel materials. Additionally, the overall shielding efficiency of the shielding barrel increases linearly with the number of multiple layers. Under the combined active and passive electromagnetic shielding conditions, the system achieves a shielding efficiency of S E = 113.98 dB, demonstrating excellent performance in shielding both AC and DC interference magnetic fields. This study provides theoretical guidance for the construction of magnetic shielding systems in electromagnetic interference environment.

An intensity-demodulated fiber-optic magnetometer is proposed and experimentally investigated, which is fabricated via fusion splicing a segment of photonic crystal fiber (PCF) between single-mode fibers (SMFs), with the cladding air holes of PCF filled with magnetic fluid. Using the magneto-optical properties of the magnetic fluid, the transmission spectrum is changed with an external magnetic field. Based on the intensity variations in the transmission spectrum, the magnetic field is detected, and a sensitivity of 0.238 dB/mT is obtained at 1550.03 nm with the length of PCF 5.5 cm. By converting light signals into electrical signals, a sensitivity of 0.003 V/mT is achieved. The fiber-optic magnetometer possesses the advantages of simple fabrication, compact/robust structure, and low cost.

A co-sputtering process for the deposition of Fe 0.8 Ga 0.2 B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe 0.8 Ga 0.2 B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe 0.8 Ga 0.2 B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering power of the B target increases, the coercivity decreases first and then increases because of the conversion of the films from a crystalline to an amorphous state. The lowest coercivity of 7.51 Oe is finally obtained with the sputtering power of 20 W for the FeGa target and 60 W for the B target. Potentially, this optimization provides a simple way for improving the magnetoelectric coefficient of magnetoelectric composite materials and the sensitivity of magnetoelectric sensors.

At present, flexible pressure-sensitive materials generally have problems with weak adhesion and poor wear resistance, which easily result in friction failure when used for plantar pressure detection. In this study, a flexible pressure sensor with the advantages of a wide detection range, fast recovery, and good abrasive resistance was designed and prepared based on the screen printing process. The pressure-sensitive unit with a structural size of 5 mm× 8 mm was a functional material system due to the use of graphene and epoxy resin. The influence of the different mass ratios of the graphene and epoxy resin on the sensing properties was also studied. The test results showed that when the mass ratio of graphene to epoxy resin was 1:4, the response time and recovery time of the sensing unit were 40.8 ms and 3.7 ms, respectively, and the pressure detection range was 2.5-500 kPa. The sensor can detect dynamic pressure at 0.5 Hz, 1 Hz, 2 Hz, 10 Hz, and 20 Hz and can withstand 11,000 cycles of bending. In addition, adhesion tests showed that the high viscosity of the epoxy helped to improve the interlayer bond between the pressure-sensitive materials and the flexible substrate, which makes it more suitable for plantar pressure detection environments, where friction is common.

GaN high-electron-mobility transistor (HEMT) terahertz (THz) detectors have been widely studied and applied in the past few decades. However, there are few reports about the influence of GaN/AlGaN heterostructure material properties on the detection model at present. In this paper, a response voltage model for a GaN HEMT THz detector that considers the carrier scattering in a GaN/AlGaN heterostructure is proposed. The phonon scattering, dislocation scattering, and interface roughness scattering mechanisms are taken into account in the classic THz response voltage model; furthermore, the influence of various material parameters on the response voltage is studied. In a low-temperature region, acoustic scattering plays an important role, and the response voltage drops with an increase in temperature. In a high temperature range, optical phonon scattering is the main scattering mechanism, and the detector operates in a non-resonant detection mode. With an increase in carrier surface density, the response voltage decreases and then increases due to piezoelectric scattering and optical phonon scattering. For dislocation and interface roughness scattering, the response voltage is inversely proportional to the dislocation density and root mean square roughness (RMS) but is positively related to lateral correlation length. Finally, a comparison between our model and the reported models shows that our proposed model is more accurate.