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In this study, both memcapacitive and memristive characteristics in the composite material based on the rhenium disulfide (ReS 2 ) rich in rhenium (VI) oxide (ReO 3 ) surface overlayer (ReO 3 @ReS 2 ) and in the indium tin oxide (ITO)/ReO 3 @ReS 2 /aluminum (Al) device configuration is presented. Comprehensive experimental analysis of the ReO 3 @ReS 2 material properties' dependence on the memcapacitor electrical characteristics was carried out by standard as well as frequency-dependent current-voltage, capacitance-voltage, and conductance-voltage studies. Furthermore, determination of the charge carrier conduction model, charge carrier mobility, density of the trap states, density of the available charge carrier, free-carrier concentration, effective density of states in the conduction band, activation energy of the carrier transport, as well as ion hopping was successfully conducted for the ReO 3 @ReS 2 based on the experimental data. The ITO/ReO 3 @ReS 2 /Al charge carrier conduction was found to rely on the mixed electronic-ionic processes, involving electrochemical metallization and lattice oxygen atoms migration in response to the externally modulated electric field strength. The chemical potential generated by the electronic-ionic ITO/ReO 3 @ReS 2 /Al resistive memory cell non-equlibrium processes leads to the occurrence of the nanobattery effect. This finding supports the possibility of a nonvolatile memory cell with a new operation principle based on the potential read function.