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Copper oxide nanowires (NWs) are promising elements for the realization of a wide range of devices for low-power electronics, gas sensors, and energy storage applications, due to their high aspect ratio, low environmental impact, and cost-effective manufacturing. Here, we report on the electrical and thermal properties of copper oxide NWs synthetized through thermal growth directly on copper foil. Structural characterization revealed that the growth process resulted in the formation of vertically aligned NWs on the Cu growth substrate, while the investigation of chemical composition revealed that the NWs were composed of CuO rather than Cu2O. The electrical characterization of single-NW-based devices, in which single NWs were contacted by Cu electrodes, revealed that the NWs were characterized by a conductivity of 7.6 × 10−2 S∙cm−1. The effect of the metal–insulator interface at the NW–electrode contact was analyzed by comparing characterizations in two-terminal and four-terminal configurations. The effective thermal conductivity of single CuO NWs placed on a substrate was measured using Scanning Thermal Microscopy (SThM), providing a value of 2.6 W∙m−1∙K−1, and using a simple Finite Difference model, an estimate for the thermal conductivity of the nanowire itself was obtained as 3.1 W∙m−1∙K−1. By shedding new light on the electrical and thermal properties of single CuO NWs, these results can be exploited for the rational design of a wide range of optoelectronic devices based on NWs. [ABSTRACT FROM AUTHOR]

Apart from being the subject of this Special Issue, what is nanometrology? Such methods are certainly "measurement science at nanoscale", and there is certainly a continuous development in them; however, the authors for some reason do not call such work "nanometrology". When looking at some older review papers related to nanometrology, e.g., [[1]], we can see that it was expected that nanometrology could cover nearly all that was mentioned above, expanding also to novel areas such as life sciences. [Extracted from the article]

Synthetic data are of increasing importance in nanometrology. They can be used for development of data processing methods, analysis of uncertainties and estimation of various measurement artefacts. In this paper we review methods used for their generation and the applications of synthetic data in scanning probe microscopy, focusing on their principles, performance, and applicability. We illustrate the benefits of using synthetic data on different tasks related to development of better scanning approaches and related to estimation of reliability of data processing methods. We demonstrate how the synthetic data can be used to analyse systematic errors that are common to scanning probe microscopy methods, either related to the measurement principle or to the typical data processing paths. [ABSTRACT FROM AUTHOR]

Reference samples are commonly used for the calibration and quantification of nanoscale electrical measurements of capacitances and dielectric constants in scanning microwave microscopy (SMM) and similar techniques. However, the traceability of these calibration samples is not established. In this work, we present a detailed investigation of most possible error sources that affect the uncertainty of capacitance measurements on the reference calibration samples. We establish a comprehensive uncertainty budget leading to a combined uncertainty of 3% in relative value (uncertainty given at one standard deviation) for capacitances ranging from 0.2 fF to 10 fF. This uncertainty level can be achieved even with the use of unshielded probes. We show that the weights of uncertainty sources vary with the values and dimensions of measured capacitances. Our work offers improvements on the classical calibration methods known in SMM and suggests possible new designs of reference standards for capacitance and dielectric traceable measurements. Experimental measurements are supported by numerical calculations of capacitances to reveal further paths for even higher improvements. [ABSTRACT FROM AUTHOR]