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The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick. A non-monotonic variation of Co-Fe-B film damping with thickness is observed, which is in contrast to previously reported monotonic trends. The minimum damping and the corresponding Co-Fe-B thickness vary significantly among the different non-magnetic layer series, indicating that the structure selection significantly alters the relative contributions of various damping mechanisms. Thus, we developed a quantitative method to distinguish intrinsic from extrinsic damping via ferromagnetic resonance measurements of thickness-dependent damping rather than the traditional numerical calculation method. By separating extrinsic and intrinsic damping, each mechanism affecting the total damping of Co-Fe-B films in sandwich structures is analyzed in detail. Our findings have revealed that the thickness-dependent damping measurement is an effective tool for quantitatively investigating different damping mechanisms. This investigation provides an understanding of underlying mechanisms and opens up avenues for achieving low damping in Co-Fe-B alloy film, which is beneficial for the applications in spintronic devices design and optimization. [ABSTRACT FROM AUTHOR]

In this paper, we design a multifunctional micro-nano device with a hybrid metamaterial-waveguide system, which leads to a triple plasmon-induced transparency (PIT). The formation mechanisms of the three transparent peaks have their own unique characteristics. First, PIT-I can be switched into the BIC (Friedrich–Wintge bound state in continuum), and the quality factors (Q-factors) of the transparency window of PIT-I are increased during the process. Second, PIT-II comes from near-field coupling between two bright modes. Third, PIT-III is generated by the near-field coupling between a low-Q broadband bright mode and a high-Q narrowband guide mode, which also has a high-Q transparent window due to the guide mode. The triple-PIT described above can be dynamically tuned by the gate voltage of the graphene, particularly for the dynamic tuning of the Q values of PIT-I and PIT-III. Based on the high Q value of the transparent window, our proposed structure can be used for highly sensitive refractive index sensors or devices with prominent slow light effects. [ABSTRACT FROM AUTHOR]