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Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS2. The pristine MoS2 exhibits diamagnetic properties from low-to-room temperature. However, MoS2 compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

MoS2 nanoscrolls that have inner core radii of ∼250 nm are generated from MoS2 monolayers, and the optical and transport band gaps of the nanoscrolls are investigated. Photoluminescence spectroscopy reveals that a MoS2 monolayer, originally a direct gap semiconductor (∼1.85 eV (optical)), changes into an indirect gap semiconductor (∼1.6 eV) upon scrolling. The size of the indirect gap for the MoS2 nanoscroll is larger than that of a MoS2 bilayer (∼1.54 eV), implying a weaker interlayer interaction between concentric layers of the MoS2 nanoscroll compared to Bernal-stacked MoS2 few-layers. Transport measurements on MoS2 nanoscrolls incorporated into ambipolar ionic-liquid-gated transistors yielded a band gap of ∼1.9 eV. The difference between the transport and optical gaps indicates an exciton binding energy of 0.3 eV for the MoS2 nanoscrolls. The rolling up of 2D atomic layers into nanoscrolls introduces a new type of quasi-1D nanostructure and provides another way to modify the band gap of 2D materials.

Mobility spectrum analysis (MSA) is a method that enables the carrier density (and mobility) separation of the majority and minority carriers in multicarrier semiconductors, respectively. In this paper, we use the p-GaAs layer in order to demonstrate that the MSA can perform unique facilities for the defect analysis by using its resolvable features for the carriers. Using two proven methods, we reveal that the defect state can be anticipated at the characteristic temperature Tdeep, in which the ratio (RNn/Nh) that is associated with the density of the minority carrier Nn, to the density of the majority carrier Nh, exceeds 50%. (1) Using a p-GaAs Schottky diode in a reverse bias regime, the position of the deep level transient spectroscopy (DLTS) peak is shown directly as the defect signal. (2) Furthermore, by examining the current–voltage–temperature (I–V–T) characteristics in the forward bias regime, this peak position has been indirectly revealed as the generation–recombination center. The DLTS signals are dominant around the Tdeep, according to the window rate, and it has been shown that the peak variation range is consistent with the temperature range of the temperature-dependent generation–recombination peak. The Tdeep is also consistent with the temperature-dependent thermionic emission peak position. By having only RNn/Nh through the MSA, it is possible to intuitively determine the existence and the peak position of the DLTS signal, and the majority carrier’s density enables a more accurate extraction of the deep trap density in the DLTS analysis.

In this study, we report the synthesis of a 3-dimensional (3D) hierarchical Bi3O4Cl/Bi5O7I (BOC/BOI) heterostructure for the photocatalytic degradation of Rhodamine-B (RhB) dye and colorless Bisphenol-A (BPA) pollutant under visible light. The heterostructure was prepared using in situ solvothermal and calcination methods. BOC/BOI exhibits a 3D hierarchical structure constructed with thin nano-platelets. The photocatalytic performance of the BOC/BOI photocatalyst demonstrated that the degradation efficiencies of RhB and BPA were 97% and 92% after light illumination within 90 and 30 min, respectively. In comparison, bare BOC and BOI efficiencies were only 20% and 10% for RhB dye, respectively, and 2.3% and 37% for BPA aqueous pollutants, respectively. Moreover, radical trapping measurements indicated that •O2− and •OH radicals played prominent roles in RhB and BPA degradation into mineralization. Analysis of band structures and photochemical redox reactions of BOC/BOI revealed a Z-scheme charge transfer between BOC and BOI by an internal electric field formed at the interface. Therefore, the highly improved photocatalytic performance of the BOC/BOI heterostructure is attributed to the synergetic effects of large surface area, high visible-light absorption, and the enhanced separation and transport of photo-excited electron–hole pairs induced by the hierarchical and Z-scheme heterojunction of the BOC/BOI.

For this study, polarity-controlled ZnO films were grown on lithium niobate (LiNbO3) substrates without buffer layers using the pulsed-laser deposition technique. The interfacial structure between the ZnO films and the LiNbO3 was inspected using high-resolution transmission electron microscopy (HR-TEM) measurements, and X-ray diffraction (XRD) measurements were performed to support these HR-TEM results. The polarity determination of the ZnO films was investigated using piezoresponse force microscopy (PFM) and a chemical-etching analysis. It was verified from the PFM and chemical-etching analyses that the ZnO film grown on the (+z) LiNbO3 was Zn-polar ZnO, while the O-polar ZnO occurred on the (-z) LiNbO3. Further, a possible mechanism of the interfacial atomic configuration between the ZnO on the (+z) LiNbO3 and that on the (-z) LiNbO3 was suggested. It appears that the electrostatic stability at the substrate surface determines the initial nucleation of the ZnO films, leading to the different polarities in the ZnO systems.

Graphitic carbon nitride (g-C3N4) nanosheets were exfoliated from bulk g-C3N4 and utilized to improve the sensing performance of a pure graphene sensor for the first time. The role of hydrochloric acid treatment on the exfoliation result was carefully examined. The exfoliated products were characterized by X-ray diffraction (XRD) patterns, scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV-Vis spectroscopy. The exfoliated g-C3N4 nanosheets exhibited a uniform thickness of about 3–5 nm and a lateral size of about 1–2 µm. A g-C3N4/graphene nanocomposite was prepared via a self-assembly process and was demonstrated to be a promising sensing material for detecting nitrogen dioxide gas at room temperature. The nanocomposite sensor exhibited better recovery as well as two-times the response compared to pure graphene sensor. The detailed sensing mechanism was then proposed.