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Currently, precious metal group materials are known as the efficient and widely used oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) catalysts. The exorbitant prices and scarcity of the precious metals have stimulated scale exploration of alternative non-precious metal catalysts with low-cost and high performance. Layered double hydroxides (LDHs) are a promising precursor to prepare cost-effective and high-performance catalysts because they possess abundant micropores and nitrogen self-doping after pyrolysis, which can accelerate the electron transfer and serve as active sites for efficient OER. Herein, we developed a new highly active NiFeMn-layered double hydroxide (NFM LDH) based electrocatalyst for OER. Through building NFM hydroxide/oxyhydroxide heterojunction and incorporation of conductive graphene, the prepared NFM LDH-based electrocatalyst delivers a low overpotential of 338 mV at current density of 10 mA cm−2 with a small Tafel slope of 67 mV dec−1, which are superior to those of commercial RuO2 catalyst for OER. The LDH/OOH heterojunction involves strong interfacial coupling, which modulates the local electronic environment and boosts the kinetics of charge transfer. In addition, the high valence Fe3+ and Mn3+ species formed after NaOH treatment provide more active sites and promote the Ni2+ to higher oxidation states during the O2 evolution. Moreover, graphene contributes a lot to the reduction of charge transfer resistance. The combining effects have greatly enhanced the catalytic ability for OER, demonstrating that the synthesized NFM LDH/OOH heterojunction with graphene linkage can be practically applied as a high-performance electrocatalyst for oxygen production via water splitting.

Bi2Se3 possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs. It is also pointed out that Bi2Se3 is a topological insulator, making it a promising candidate for a wide range of electronic and optoelectronic applications. In this study, we investigate the growth of high-quality Bi2Se3 thin films on mica by the molecular beam epitaxy technique. The films exhibited a layered structure and highly c-axis-preferred growth orientation with an XRD rocking curve full-width at half-maximum (FWHM) of 0.088°, clearly demonstrating excellent crystallinity for the Bi2Se3 deposited on the mica substrate. The growth mechanism was studied by using an interface model associated with the coincidence site lattice unit (CSLU) developed for van der Waals epitaxies. This high (001) texture favors electron transport in the material. Hall measurements revealed a mobility of 726 cm2/(Vs) at room temperature and up to 1469 cm2/(Vs) at 12 K. The results illustrate excellent electron mobility arising from the superior crystallinity of the films with significant implications for applications in conducting electrodes in optoelectronic devices on flexible substrates.