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Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

This study focuses on fabricating efficient CdS/CdTe thin-film solar cells with thermally evaporated cuprous iodide (CuI) as hole-transporting material (HTM) by replacing Cu back contact in conventional CdS/CdTe solar cells to avoid Cu diffusion. In this study, a simple thermal evaporation method was used for the CuI deposition. The current-voltage characteristic of devices with CuI films of thickness 5 nm to 30 nm was examined under illuminations of 100 mW/cm2 (1 sun) with an Air Mass (AM) of 1.5 filter. A CdS/CdTe solar cell device with thermally evaporated CuI/Au showed power conversion efficiency (PCE) of 6.92% with JSC, VOC, and FF of 21.98 mA/cm2, 0.64 V, and 0.49 under optimized fabrication conditions. Moreover, stability studies show that fabricated CdS/CdTe thin-film solar cells with CuI hole-transporters have better stability than CdS/CdTe thin-film solar cells with Cu/Au back contacts. The significant increase in FF and, hence, PCE, and the stability of CdS/CdTe solar cells with CuI, reveals that Cu diffusion could be avoided by replacing Cu with CuI, which provides good band alignment with CdTe, as confirmed by XPS. Such an electronic band structure alignment allows smooth hole transport from CdTe to CuI, which acts as an electron reflector. Hence, CuI is a promising alternative stable hole-transporter for CdS/CdTe thin-film solar cells that increases the PCE and stability.

Hybrid Titanium dioxide/Poly(3-hexylthiophene) heterojunction solar cells have gained research interest as they have the potential to become cost-effective solar technology in the future. Limited power conversion efficiencies of about 5–6% have been reported so far, and an enhancement in efficiency was achieved through the engineering of the interface between Titanium dioxide (TiO2) and Poly(3-hexylthiophene) (P3HT). Evolution of this solar cell technology is relatively slow-moving due to the complex features of the metal oxide-polymer system and the limited understanding of the technology. In this review, we focus on recent developments in interface modified hybrid Titanium dioxide/Poly(3-hexylthiophene) solar cells, provide a short discussion on the working principle, device structure with interface modifiers, and summarize various types of interface modifiers studied to enhance the photovoltaic performance of hybrid TiO2/P3HT heterojunction solar cells. Further, we discuss the key factors influencing the power conversion efficiency and the role of a variety of interface modifiers in this regard. Finally, the challenges and perspectives related to hybrid TiO2/P3HT heterojunction solar cells are also explored.