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Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step under As flux. In order to model the complex process, including the masked deposition of the droplets and a reduction of their number during a thermal annealing step, a multiscale kinetic Monte Carlo (mkMC) simulation of self-assembled Ga droplet formation on AlGaAs is expanded for area-selective deposition. The simulation has only two free model parameters: the activation energy for surface diffusion and the activation energy for thermal escape of adatoms from a droplet. Simulated droplet numbers within the opening of the aperture agree quantitatively with the experimental results down to the perfect site-control, with one droplet per aperture. However, the model parameters are different compared to those of the self-assembled droplet growth. We attribute this to the presence of the mask in close proximity to the surface, which modifies the local process temperature and the As background. This approach also explains the dependence of the model parameters on the size of the aperture.

The optical emission of cone-shell quantum structures (CSQS) under vertical electric (F) and magnetic (B) fields is studied by means of simulations. A CSQS has a unique shape, where an electric field induces the transformation of the hole probability density from a disk into a quantum-ring with a tunable radius. The present study addresses the influence of an additional magnetic field. A common description for the influence of a B-field on charge carriers confined in a quantum dot is the Fock-Darwin model, which introduces the angular momentum quantum number l to describe the splitting of the energy levels. For a CSQS with the hole in the quantum ring state, the present simulations demonstrate a B-dependence of the hole energy which substantially deviates from the prediction of the Fock-Darwin model. In particular, the energy of exited states with a hole lh> 0 can become lower than the ground state energy with lh= 0. Because for the lowest-energy state the electron le is always zero, states with lh> 0 are optically dark due to selection rules. This allows switching from a bright state (lh= 0) to a dark state (lh> 0) or vice versa by changing the strength of the F or B field. This effect can be very interesting for trapping photoexcited charge carriers for a desired time. Furthermore, the influence of the CSQS shape on the fields required for the bright to dark state transition is investigated.

In recent years, lead-based perovskites solar cells have demonstrated excellent power-conversion efficiency. Despite their remarkable progress, the commercialization of lead-based perovskites is hampered by lead toxicity concerns. The recently discovered non-toxic FACsSnI3 perovskite has the potential to replace lead-based perovskites in solar cell applications. Since the perovskite material FACsSnI3 (FA0.85Cs0.15SnI3) is relatively new, there is a lack of information, particularly regarding the design features required for electron and hole-transport layers for efficient photovoltaic responses. The important variables, such as electron affinity, energy band gap, film thickness, and doping density of both electron and hole-transport layers, were simulated and modeled separately and iteratively in this study to achieve the most efficient photovoltaic response. Finally, the absorber layer thickness of FACsSnI3 perovskite is tuned to achieve a maximum power-conversion efficiency of slightly more than 24%. We hope that the findings of this study will serve as a strong guideline for future research and the design of lead-free perovskite solar cells for efficient photovoltaic responses.

Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE). During MBE, Al droplets are deposited on an AlGaAs surface, which then drill low-density (about 1 × 107 cm−2) nanoholes with adjustable shape and size. Subsequently, the holes are filled with GaAs to form CSQS, where the size can be adjusted by the amount of GaAs deposited for hole filling. An electric field is applied in growth direction to tune the WF in a CSQS. The resulting highly asymmetric exciton Stark shift is measured using micro-photoluminescence. Here, the unique shape of the CSQS allows a large charge–carrier separation and, thus, a strong Stark shift of up to more than 16 meV at a moderate field of 65 kV/cm. This corresponds to a very large polarizability of 8.6 × 10−6 eVkV −2 cm2. In combination with simulations of the exciton energy, the Stark shift data allow the determination of the CSQS size and shape. Simulations of the exciton–recombination lifetime predict an elongation up to factor of 69 for the present CSQSs, tunable by the electric field. In addition, the simulations indicate the field-induced transformation of the hole WF from a disk into a quantum ring with a tunable radius from about 10 nm up to 22.5 nm.

To improve photoelectrochemical (PEC) water splitting, various ZnO nanostructures (nanorods (NRs), nanodiscs (NDs), NRs/NDs, and ZnO NRs decorated with gold nanoparticles) have been manufactured. The pure ZnO nanostructures have been synthesized using the successive ionic-layer adsorption and reaction (SILAR) combined with the chemical bath deposition (CBD) process at various deposition times. The structural, chemical composition, nanomorphological, and optical characteristics have been examined by various techniques. The SEM analysis shows that by varying the deposition time of CBD from 2 to 12 h, the morphology of ZnO nanostructures changed from NRs to NDs. All samples exhibit hexagonal phase wurtzite ZnO with polycrystalline nature and preferred orientation alongside (002). The crystallite size along (002) decreased from approximately 79 to 77 nm as deposition time increased from 2 to 12 h. The bandgap of ZnO NRs was tuned from 3.19 to 2.07 eV after optimizing the DC sputtering time of gold to 4 min. Via regulated time-dependent ZnO growth and Au sputtering time, the PEC performance of the nanostructures was optimized. Among the studied ZnO nanostructures, the highest photocurrent density (Jph) was obtained for the 2 h ZnO NRs. As compared with ZnO NRs, the Jph (7.7 mA/cm2) of 4 min Au/ZnO NRs is around 50 times greater. The maximum values of both IPCE and ABPE are 14.2% and 2.05% at 490 nm, which is closed to surface plasmon absorption for Au NPs. There are several essential approaches to improve PEC efficiency by including Au NPs into ZnO NRs, including increasing visible light absorption and minority carrier absorption, boosting photochemical stability, and accelerating electron transport from ZnO NRs to electrolyte carriers.

Strain-free GaAs quantum dots (QDs) are fabricated by filling droplet-etched nanoholes in AlGaAs. Using a template of nominally identical nanoholes, the QD size is precisely controlled by the thickness of the GaAs filling layer. Atomic force microscopy indicates that the QDs have a cone-shell shape. From single-dot photoluminescence measurements, values of the exciton emission energy (1.58...1.82 eV), the exciton–biexciton splitting (1.8...2.5 meV), the exciton radiative lifetime of bright (0.37...0.58 ns) and dark (3.2...6.7 ns) states, the quantum efficiency (0.89...0.92), and the oscillator strength (11.2...17.1) are determined as a function of the dot size. The experimental data are interpreted by comparison with an atomistic model.

Due to the low mechanical performances of 3D-printed denture base resins, ZrO2 nanoparticles (ZrO2NPs) were incorporated into different 3D-printed resins and their effects on the flexure strength, elastic modulus, impact strength, hardness, and surface roughness were evaluated. A total of 286 specimens were fabricated in dimensions per respective test and divided according to materials into three groups: heat-polymerized as a control group and two 3D-printed resins (NextDent and ASIGA) which were modified with 0.5 wt.%, 1 wt.%, 3 wt.%, and 5 wt.% ZrO2NPs. The flexure strength and elastic modulus, impact strength, hardness, and surface roughness (µm) were measured using the three-point bending test, Charpy’s impact test, Vickers hardness test, and a profilometer, respectively. The data were analyzed by ANOVA and Tukey’s post hoc test (α = 0.05). The results showed that, in comparison to heat-polymerized resin, the unmodified 3D-printed resins showed a significant decrease in all tested properties (p < 0.001) except surface roughness (p = 0.11). In between 3D-printed resins, the addition of ZrO2NPs to 3D-printed resins showed a significant increase in flexure strength, impact strength, and hardness (p < 0.05) while showing no significant differences in surface roughness and elastic modulus (p > 0.05). Our study demonstrated that the unmodified 3D-printed resins showed inferior mechanical behavior when compared with heat-polymerized acrylic resin while the addition of ZrO2NPs improved the properties of 3D-printed resins. Therefore, the introduced 3D-printable nanocomposite denture-base resins are suitable for clinical use.