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The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 105 at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

Performance modulation of ZnO optoelectronic devices in the presence of proper piezoelectric polarization charges has been widely reported, whereas relatively less work has been performed about the influence of photoexcitation on piezotronics. In this study, we experimentally investigated the performance evolution of ZnO piezotronic strain sensor under various 365 nm UV irradiation densities. The device demonstrated a response ratio of ~200 under no illumination and under −0.53% compressive strain, and the response time is approximately 0.3 s. However, tremendous performance degradation was observed with the increase in the illumination density, which is attributed to the UV-modulated change in the free electron concentration and Schottky barrier height. It was observed that increased carrier density intensifies the screening effect and thus, the modulation ability of piezo-polarization charges weakens. Meanwhile, the deterioration of rectifying behavior at the interface under UV illumination also jeopardizes the device performance.

Sandwich-style memristor devices were synthesized by electrochemical deposition with a ZnO film serving as the active layer between Al-doped ZnO (AZO) and Au electrodes. The carrier concentration of the ZnO films is controlled by adding HNO3 during the growth process. A resulting increase in carrier concentration from 1017 to 1019 cm–3 was observed, along with a corresponding drop in the on–off ratio from 6,437% to 100%. The resistive switching characteristics completely disappeared when the carrier concentration was above 1019 cm–3, making it unsuitable for a memory device. The decreasing switching ratio is attributed to a reduction in the driving force for oxygen vacancy drift. Systematic analysis of the migration of oxygen vacancies is presented, including the concentration gradient and electrical potential gradient. Such oxygen vacancy migration dynamics provide insight into the mechanisms of the oxygen vacancy drift and provide valuable information for industrial production of memristor devices.

Photoanodes, which are used in photoelectrochemical (PEC) water splitting, have been shown to be applicable in the construction of a PEC biosensing platform. This was realized by replacing water oxidization with oxidation of an appropriate test molecule. Here, we have demonstrated the feasibility of adopting photoanodes consisting of zinc oxide nanorods arrays decorated with plasmonic gold nanoparticles (Au NPs@ZnO NRs) for the self-powered PEC bioanalysis of glutathione (GSH) in phosphate-buffered saline (PBS) at an applied bias potential of 0 V vs. Ag/AgCl. This heterostructure exhibited enhanced PEC properties because of the introduction of the Au/ZnO interface. Under visible light illumination, hot electrons from surface-plasmon resonance (SPR) at the Au NP surface were injected into the adjacent ZnO and subsequently driven to the photocathode. Under ultraviolet (UV) light illumination, the photogenerated electrons in ZnO tended to transfer to the fluorine-doped tin oxide due to the step-wise energy band structure and the upward energy band bending at the ZnO/ electrolyte interface. These results indicate that plasmonic metal/semiconductor heterostructure photoanodes have great potential for self-powered PEC bioanalysis applications and extended field of other photovoltaic beacons.

We developed and demonstrated a ZnO/ZnS/Au composite photoanode with significantly enhanced photoelectrochemical water-splitting performance, containing a ZnS interlayer and Au nanoparticles. The solar-to-hydrogen conversion efficiency of this ZnO/ZnS/Au heterostructure reached 0.21%, 3.5 times that of pristine ZnO. The comparison of the incident photon-to-current efficiency (IPCE) and the photoresponse in the white and visible light regions further verified that the enhancement resulted from contributions of both UV and visible light. The modification of the Au NPs was shown to improve the photoelectrochemical (PEC) performance to both UV and visible light, as modification encouraged effective surface passivation and surface-plasmonresonance effects. The ZnS interlayer favored the movement of photogenerated electrons under UV light and hot electrons under visible light, causing their injection into ZnO; this simultaneously suppressed the electron-hole recombination at the photoanode-electrolyte interface. The optimized design of the interlayer within plasmonic metal/semiconductor composite systems, as reported here, provided a facile and compatible photoelectrode configuration, enhancing the utilization efficiency of incident light for photoelectrochemical applications.

Gold nanoparticle (Au NP)@ZnO nanorod (NR) (Au@ZnO) hybrids with various ZnO:Au molar ratios were developed to enhance the generation of reactive oxygen species (ROS) in photodynamic therapy (PDT) applications. Introducing a metal/semiconductor heterostructure interface between Au NPs and ZnO NRs modulated electron transfer under ultraviolet (UV) irradiation, which dramatically suppressed the electron-hole recombination in ZnO and simultaneously increased the amount of excited electrons with high energy at Au NP surfaces. Hence, the ROS yield of the nanohybrid was considerably improved over those of pristine Au NPs or ZnO NRs alone and demonstrated a “1 + 1 > 2 effect.” This enhancement was strengthened with increases in the proportion of Au in the hybrid. The results showed that the Au@ZnO nanohybrids with a ZnO:Au ratio of 20:1 generated the highest ROS yield because they had the largest interface area between Au and ZnO, which in turn led to the lowest cell viability for HeLa and C2C12 cells during PDT. Furthermore, both ROS generation and cell destruction were positively correlated with nanohybrid dosage. The Au@ZnO hybrid (20:1, 100 μg/mL) resulted in HeLa cell viability as low as 28% after UV exposure for 2 min, which indicated its promising potential to improve the therapeutic efficacy of PDT.

The ability to arbitrarily regulate semiconductor interfaces provides the most effective way to modulate the performance of optoelectronic devices. However, less work has been reported on piezo-modulated interface engineering in all-oxide systems. In this paper, an enhanced photoresponse of an all-oxide Cu2O/ZnO heterojunction was obtained by taking advantage of the piezotronic effect. The illumination density-dependent piezoelectric modulation ability was also comprehensively investigated. An 18.6% enhancement of photoresponse was achieved when applying a −0.88% compressive strain. Comparative experiments confirmed that this enhancement could be interpreted in terms of the band modification induced by interfacial piezoelectric polarization. The positive piezopotential generated at the ZnO side produces an increase in space charge region in Cu2O, thus providing an extra driving force to separate the excitons more efficiently under illumination. Our research provides a promising method to boost the performance of optoelectronics without altering the interface structure and could be extended to other metal oxide devices.

ZnO nanomaterials have been shown to have novel applications in optoelectronics, energy harvesting and piezotronics, due to their coupled semiconducting and piezoelectric properties. Here a functional nanogenerator (FNG) based on ZnO nanowire arrays has been fabricated, which can be employed to detect vibration in both self-powered (SP) and external-powered (EP) modes. In SP mode, the vibration responses of the FNG can be measured through converting mechanical energy directly into an electrical signal. The FNG shows consistent alternating current responses (relative error < 0.37%) at regular frequencies from 1 to 15 Hz. In EP mode, the current responses of FNG are significantly enhanced via the piezotronic effect. Under a forward bias of 3 V, the sensor presented a sensitivity of 3700% and an accurate measurement (relative error < 0.91%) of vibration frequencies in the range 0.05–15 Hz. The results show that this type of functional nanogenerator sensor can detect vibration in both SP and EP modes according to the demands of the applications.