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Metal-insulator transitions in strongly correlated oxides induced by electrochemical charging have been attributed to formation of vacancy defects. However, the role of native defects in affecting these transitions is not clear. Here, we report a new type of phase transition in p-type, nonstoichiometric nickel oxide involving a semiconductor-to-insulator-to-metal transition along with the complete reversal of conductivity from p- to n-type at room temperature induced by electrochemical charging in a Li+-containing electrolyte. Direct observation of vacancy-ion interactions using in situ near-infrared photoluminescence spectroscopy show that the transition is a result of passivation of native nickel (cationic) vacancy defects and subsequent formation of oxygen (anionic) vacancy defects driven by Li+ insertion into the lattice. Changes in the oxidation states of nickel due to defect interactions probed by X-ray photoemission spectroscopy support the above conclusions. In contrast, n-type, nonstoichiometric tungsten oxide shows only insulator-to-metal transition, which is a result of oxygen vacancy formation. The defect-property correlations shown here in these model systems can be extended to other oxides. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) undergoes significant optical, electronic, and structural changes as it transforms between the low-temperature monoclinic and high-temperature rutile phases. Recently, alternative stimuli have been utilized to trigger insulator-to-metal transformations in VO2, including electrochemical gating. Here, we prepare and electrochemically reduce mesoporous films of VO2 nanocrystals, prepared from colloidally synthesized V2O3 nanocrystals that have been oxidatively annealed, in a three-electrode electrochemical cell. We observe a reversible transition between infrared transparent insulating phases and a darkened metallic phase by in situ visible-near-infrared spectroelectrochemistry and correlate these observations with structural and electronic changes monitored by X-ray absorption spectroscopy, X-ray diffraction, Raman spectroscopy, and conductivity measurements. An unexpected reversible transition from conductive, reduced monoclinic VO2 to an infrared-transparent insulating phase upon progressive electrochemical reduction is observed. This insulator-metal-insulator transition has not been reported in previous studies of electrochemically gated epitaxial VO2 films and is attributed to improved oxygen vacancy formation kinetics and diffusion due to the mesoporous nanocrystal film structure. [ABSTRACT FROM AUTHOR]

Metal-insulator transitions in strongly correlated oxides induced by electrochemical charging have been attributed to formation of vacancy defects. However, the role of native defects in affecting these transitions is not clear. Here, we report a new type of phase transition in p-type, nonstoichiometric nickel oxide involving a semiconductor-to-insulator-to-metal transition along with the complete reversal of conductivity from p- to n-type at room temperature induced by electrochemical charging in a Li + -containing electrolyte. Direct observation of vacancy-ion interactions using in situ near-infrared photoluminescence spectroscopy show that the transition is a result of passivation of native nickel (cationic) vacancy defects and subsequent formation of oxygen (anionic) vacancy defects driven by Li + insertion into the lattice. Changes in the oxidation states of nickel due to defect interactions probed by X-ray photoemission spectroscopy support the above conclusions. In contrast, n-type, nonstoichiometric tungsten oxide shows only insulator-to-metal transition, which is a result of oxygen vacancy formation. The defect-property correlations shown here in these model systems can be extended to other oxides.