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Start Over Author "Zeng, Xiao Cheng" Journal nano letters
21 results on '"Zeng, Xiao Cheng"'

3. Enhanced Direct Exchange Interaction and Hybridization by Single-Atom Linkers for High Curie Temperature and Superior Visible-Light Harvesting in Cr3(CN3)2

Author

Liu, Xiaofeng, Wang, Haidi, Chen, Zhao, Zhu, Weiduo, Li, Zhongjun, Hu, Wei, Xiao, Haixiao, and Zeng, Xiao Cheng

Abstract

Designing two-dimensional (2D) ferromagnetic (FM) semiconductors with elevated Curie temperature, high carrier mobility, and strong light harvesting is challenging but crucial to the development of spintronics with multifunctionalities. Herein, we show first-principles computation evidence of the 2D metal–organic framework Kagome ferromagnet Cr3(CN3)2. Monolayer Cr3(CN3)2is predicted to be an FM semiconductor with a record-high Curie temperature of 943 K owing to the use of a single-atom linker (N), which results in strong direct d–p exchange interaction and hybridization between dyz/xzand pzof Cr and N, as well as excellent matching characteristics in energy and symmetry. The single-atom linker structural feature also leads to notable band dispersion and a relatively high carrier mobility of 420 cm2V–1s–1. Moreover, under the in-plane strain, 2D Cr3(CN3)2can be tuned to possess a strong visible-light-harvesting functionality. These novel properties render monolayer Cr3(CN3)2a distinct 2D ferromagnet with high potential for the development of multifunctional spintronics.

Published
2024
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18. Lotus Effect in Engineered Zirconia

Author

Namavar, Fereydoon, primary, Cheung, Chin Li, additional, Sabirianov, Renat F., additional, Mei, Wai-Ning, additional, Zeng, Xiao Cheng, additional, Wang, Gonghua, additional, Haider, Hani, additional, and Garvin, Kevin L., additional

Published
2008
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21. Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI 2 Layers.

Author

Chen X, Ding X, Gou G, and Zeng XC

Abstract

Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX 2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr 2 and HgI 2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI 2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm 2 , readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI 2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.

Published
2024
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