1. High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts
- Author
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Zhixian Zhou, Ya-Qiong Xu, Jiaqiang Yan, David Mandrus, Tianjiao Wang, Tu Hong, Kraig Andrews, Arthur Bowman, and Michael R. Koehler
- Subjects
Photocurrent ,Materials science ,business.industry ,Mechanical Engineering ,Response time ,Photodetector ,Bioengineering ,02 engineering and technology ,General Chemistry ,Specific detectivity ,RC time constant ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Photodiode ,law.invention ,law ,Optoelectronics ,General Materials Science ,Quantum efficiency ,0210 nano-technology ,business ,Ohmic contact - Abstract
We report high-performance WSe2 phototransistors with two-dimensional (2D) contacts formed between degenerately p-doped WSe2 and undoped WSe2 channel. A photoresponsivity of ∼600 mA/W with a high external quantum efficiency up to 100% and a fast response time (both rise and decay times) shorter than 8 μs have been achieved concurrently. More importantly, our WSe2 phototransistor exhibits a high specific detectivity (∼1013 Jones) in vacuum, comparable or higher than commercial Si- and InGaAs-based photodetectors. Further studies have shown that the high photoresponsivity and short response time of our WSe2 phototransistor are mainly attributed to the lack of Schottky-barriers between degenerately p-doped WSe2 source/drain contacts and undoped WSe2 channel, which can reduce the RC time constant and carrier transit time of a photodetector. Our experimental results provide an accessible strategy to achieve high-performance WSe2 phototransistor architectures by improving their electrical transport and photocur...
- Published
- 2018