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Materials integration in heterostructureswith novel propertiesdifferent from those of the constituents has become one of the mostpowerful concepts of modern materials science. Two-dimensional (2D)crystals represent a new class of materials from which such engineeredstructures can be envisioned. Calculations have predicted emergentproperties in 2D heterostructures with nanoscale feature sizes, butmethods for their controlled fabrication have been lacking. Here,we use sequential graphene and boron nitride growth on Ru(0001) toshow that lateral heteroepitaxy, the joining of 2D materials by preferentialincorporation of different atomic species into exposed 1D edges duringchemical vapor deposition on a metal substrate, can be used for thebottom-up synthesis of 2D heterostructures with characteristic dimensionson the nanoscale. Our results suggest that on a proper substrate,this method lends itself to building nanoheterostructures from a widerange of 2D materials. [ABSTRACT FROM AUTHOR]

In the rechargeable lithium ion batteries, the rate capability and energy efficiency are largely governed by the lithium ion transport dynamics and phase transition pathways in electrodes. Real-time and atomic-scale tracking of fully reversible lithium insertion and extraction processes in electrodes, which would ultimately lead to mechanistic understanding of how the electrodes function and why they fail, is highly desirable but very challenging. Here, we track lithium insertion and extraction in the van der Waals interactions dominated SnS2 by in situ high-resolution TEM method. We find that the lithium insertion occurs via a fast two-phase reaction to form expanded and defective LiSnS2, while the lithium extraction initially involves heterogeneous nucleation of intermediate superstructure Li0.5SnS2 domains with a 1-4 nm size. Density functional theory calculations indicate that the Li0.5SnS2 is kinetically favored and structurally stable. The asymmetric reaction pathways may supply enlightening insights into the mechanistic understanding of the underlying electrochemistry in the layered electrode materials and also suggest possible alternatives to the accepted explanation of the origins of voltage hysteresis in the intercalation electrode materials. [ABSTRACT FROM AUTHOR]

The chemical transformation of nanowire templates into nanotubes is a promising avenue toward hollow one-dimensional (1D) nanostructures. To date, high-quality single crystalline tubes of nonlayered inorganic crystals have been obtained by solid-state reactions in diffusion couples of nanowires with deposited thin film shells, but this approach presents issues in achieving single-phase tubes with a desired stoichiometry. Chemical transformations with reactants supplied from the gas- or vapor-phase can avoid these complications, allowing single-phase nanotubes to be obtained through self-termination of the reaction once the sacrificial template has been consumed. Here, we demonstrate the realization of this scenario with the transformation of zincblende GaAs nanowires into single-crystalline cubic γ-Ga 2 S 3 nanotubes by reaction with sulfur vapor. The conversion proceeds via the formation of epitaxial GaAs-Ga 2 S 3 core-shell structures, vacancy injection and aggregation into Kirkendall voids, elastic relaxation of the detached Ga 2 S 3 shell, and finally complete incorporation of Ga in a crystalline chalcogenide tube. Absorption and luminescence spectroscopy on individual nanotubes show optoelectronic properties, notably a ∼3.1 eV bandgap and intense band-edge and near band-edge emission consistent with high-quality single crystals, along with transitions between gap-states due to the inherent cation-vacancy defect structure of Ga 2 S 3 . Our work establishes the transformation of nanowires via vapor-phase reactions as a viable approach for forming single-crystalline hollow 1D nanostructures with promising properties.

We use transmission electron microscopy observations to establish the parts of the phase diagram of nanometer sized Au-Ge alloy drops at the tips of Ge nanowires (NWs) that determine their temperature-dependent equilibrium composition and, hence, their exchange of semiconductor material with the NWs. We find that the phase diagram of the nanoscale drop deviates significantly from that of the bulk alloy, which explains discrepancies between actual growth results and predictions on the basis of the bulk-phase equilibria. Our findings provide the basis for tailoring vapor-liquid-solid growth to achieve complex one-dimensional materials geometries.

Using transmission electron microscopy, we identify the temperature-dependent interaction pathway of carbon-supported Au nanoparticles. At low temperature (room temp. to 400 degrees C), Au nanoparticles predominantly interact by coalescence initiated by an atomic Au bridge. At high temperature (400-800 degrees C), the particles assemble into Au/C core-shell nanostructures. C-shells around individual nanoparticles passivate their surface and prevent coalescence. Ultimately coalescence does occur via rupture of the passivating shells, which invariably follows the assembly of C sheets enveloping and compressing multiple closely spaced Au/C nanoparticles.