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Your search keyword '"Shin, Yong Cheol"' showing total 9 results
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9 results on '"Shin, Yong Cheol"'

1. Contact Engineering High-Performance n-Type MoTe2 Transistors

Author

Mleczko, Michal J., primary, Yu, Andrew C., additional, Smyth, Christopher M., additional, Chen, Victoria, additional, Shin, Yong Cheol, additional, Chatterjee, Sukti, additional, Tsai, Yi-Chia, additional, Nishi, Yoshio, additional, Wallace, Robert M., additional, and Pop, Eric, additional

Published
2019
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3. Contact Engineering High-Performance n-Type MoTe2Transistors

Author

Mleczko, Michal J., Yu, Andrew C., Smyth, Christopher M., Chen, Victoria, Shin, Yong Cheol, Chatterjee, Sukti, Tsai, Yi-Chia, Nishi, Yoshio, Wallace, Robert M., and Pop, Eric

Abstract

Semiconducting MoTe2is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2transistors with the highest performance to date, including high saturation current (>400 μA/μm at 80 K and >200 μA/μm at 300 K) and relatively low contact resistance (1.2 to 2 kΩ·μm from 80 to 300 K), achieved with Ag contacts and AlOxencapsulation. We also investigate other contact metals (Sc, Ti, Cr, Au, Ni, Pt), extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer hexagonal boron nitride between MoTe2and Sc. These metal-insulator-semiconductor (MIS) contacts partly depin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.

Published
2024
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4. Graphene-Based Thermopile for Thermal Imaging Applications

Author

Hsu, Allen L., primary, Herring, Patrick K., additional, Gabor, Nathaniel M., additional, Ha, Sungjae, additional, Shin, Yong Cheol, additional, Song, Yi, additional, Chin, Matthew, additional, Dubey, Madan, additional, Chandrakasan, Anantha P., additional, Kong, Jing, additional, Jarillo-Herrero, Pablo, additional, and Palacios, Tomás, additional

Published
2015
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9. Contact Engineering High-Performance n-Type MoTe 2 Transistors.

Author

Mleczko MJ, Yu AC, Smyth CM, Chen V, Shin YC, Chatterjee S, Tsai YC, Nishi Y, Wallace RM, and Pop E

Abstract

Semiconducting MoTe 2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe 2 transistors with the highest performance to date, including high saturation current (>400 μA/μm at 80 K and >200 μA/μm at 300 K) and relatively low contact resistance (1.2 to 2 kΩ·μm from 80 to 300 K), achieved with Ag contacts and AlO x encapsulation. We also investigate other contact metals (Sc, Ti, Cr, Au, Ni, Pt), extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer hexagonal boron nitride between MoTe 2 and Sc. These metal-insulator-semiconductor (MIS) contacts partly depin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.

Published
2019
Full Text
View/download PDF

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