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Fine control over material synthesis on the nanoscale can facilitate the stabilization of competing crystalline structures. Here, we demonstrate how carbon nanotube reaction vessels can be used to selectively create one-dimensional TaTe3 chains or two-dimensional TaTe2 nanoribbons with exquisite control of the chain number or nanoribbon thickness and width. Transmission electron microscopy and scanning transmission electron microscopy reveal the detailed atomic structure of the encapsulated materials. Complex superstructures such as multichain spiraling and apparent multilayer moirés are observed. The rare 2H phase of TaTe2 (1H in monolayer) is found to be abundant as an encapsulated nanoribbon inside carbon nanotubes. The experimental results are complemented by density functional theory calculations for the atomic and electronic structure, which uncovers the prevalence of 2H-TaTe2 due to nanotube-to-nanoribbon charge transfer and size confinement. Calculations also reveal new 1T' type charge density wave phases in TaTe2 that could be observed in experimental studies.

Imposing additional confinement in two-dimensional (2D) materials yields further control over their electronic, optical, and topological properties. However, synthesis of ultranarrow nanoribbons (NRs) remains challenging, particularly for transition metal dichalcogenides (TMDs), and synthesizing TMD NRs narrower than 50 nm has remained elusive. Here, we report the vapor-phase synthesis of ultranarrow TaS2 NRs. The NRs are grown within carbon nanotubes, limiting their width and layer number, while stabilizing them against the environment. The NRs reach monolayer thickness and exhibit widths down to 2.5 nm. Atomic-resolution scanning transmission electron microscopy reveals the detailed atomic structure of the ultranarrow NRs and we observe a hitherto unseen atomic structure supermodulation of ordered defect arrays within the NRs. Density functional theory calculations show the presence of flat bands and boundary-localized states, and help identify the atomic configuration of the supermodulation. Nanotube-templated synthesis represents a unique, transferable, and broadly deployable route toward ultranarrow TMD NR growth.

Defect engineering is widely used to impart the desired functionalities on materials. Despite the widespread application of atomic-resolution scanning transmission electron microscopy (STEM), traditional methods for defect analysis are highly sensitive to random noise and human bias. While deep learning (DL) presents a viable alternative, it requires extensive amounts of training data with labeled ground truth. Herein, employing cycle generative adversarial networks (CycleGAN) and U-Nets, we propose a method based on a single experimental STEM image to tackle high annotation costs and image noise for defect detection. Not only atomic defects but also oxygen dopants in monolayer MoS 2 are visualized. The method can be readily extended to other two-dimensional systems, as the training is based on unit-cell-level images. Therefore, our results outline novel ways to train the model with minimal data sets, offering great opportunities to fully exploit the power of DL in the materials science community.

Orientation engineering is a crucial aspect of thin film growth, and it is rather challenging to engineer film epitaxy beyond the substrate constraint. Guided by density functional theory calculations, we use SrRuO 3 (SRO) as a buffer layer and successfully deposit [111]-oriented CoFe 2 O 4 (CFO) on [001]-, [110]-, and [111]-oriented SrTiO 3 (STO) substrates. This enables subsequent growth of [111]-oriented functional oxides, such as PbTiO 3 (PTO), overcoming the constraint of the substrate. This strategy is quite general and applicable to lanthanum aluminate and yttria-stabilized zirconia substrates as well. X-ray Φ scans and atomic resolution aberration-corrected scanning transmission electron microscopy (AC-STEM) reveal detailed epitaxial relations in each of the cases, with four variants of [111]-CFO found on [001]-STO and two variants found on [110]-STO, formed to mitigate the large lattice misfit strain between the film and substrate. Our strategy thus provides a general pathway for orientation engineering of oxide epitaxy beyond substrate constraint.

In the realm of condensed matter physics and materials science, charge density waves (CDWs) have emerged as a captivating way to modulate correlated electronic phases and electron oscillations in quantum materials. However, collectively and efficiently tuning CDW order is a formidable challenge. Herein, we introduced a novel way to modulate the CDW order in 1T-TaS 2 via stacking engineering. By introducing shear strain during the electrochemical exfoliation, the thermodynamically stable AA-stacked TaS 2 consecutively transform into metastable ABC stacking, resulting in unique 3 a × 1 a CDW order. By decoupling atom coordinates, we atomically deciphered the 3D subtle structural variations in trilayer samples. As suggested by density functional theory (DFT) calculations, the origin of CDWs is presumably due to collective excitations and charge modulation. Therefore, our works shed light on a new avenue to collectively modulate the CDW order via stackingtronics and unveiled novel mechanisms for triggering CDW formation via charge modulation.

We report step edge-induced localized defects suppressing subsequent antiphase boundary formation in the bulk structure of a trilayer oxide heterostructure. The heterostructure encompasses a layer of La 0.66 Sr 0.34 MnO 3 sandwiched between a superconducting La 1.84 Sr 0.16 CuO 4 bottom layer and an insulating La 2 CuO 4 top layer. The combination of a minor a -axis mismatch (0.11 Å) and a pronounced c -axis mismatch (2.73 Å) at the step edges leads to the emergence of localized defects exclusively forming at the step edge. Employing atomically resolved electron energy-loss spectroscopy maps, we discern the electronic state of those structures in the second La 0.66 Sr 0.34 MnO 3 unit cell near the step edge. In particular, a reduction in the pre-edge region of the O- K edge indicates the formation of oxygen vacancies induced by the strained step edge. This study underscores our capability to control defects at the nanoscale.

Hydrogen donor doping of correlated electron systems such as vanadium dioxide (VO 2 ) profoundly modifies the ground state properties. The electrical behavior of H x VO 2 is strongly dependent on the hydrogen concentration; hence, atomic scale control of the doping process is necessary. It is however a nontrivial problem to quantitatively probe the hydrogen distribution in a solid matrix. As hydrogen transfers its sole electron to the material, the ionization mechanism is suppressed. In this study, a methodology mapping the doping distribution at subnanometer length scale is demonstrated across a H x VO 2 thin film focusing on the oxygen-hydrogen bonds using electron energy loss spectroscopy (EELS) coupled with first-principles EELS calculations. The hydrogen distribution was revealed to be nonuniform along the growth direction and between different VO 2 grains, calling for intricate hydrogenation mechanisms. Our study points to a powerful approach to quantitatively map dopant distribution in quantum materials relevant to energy and information sciences.

Control of the angular momentum of light is a key technology for next-generation nano-optical devices and optical communications, including quantum communication and encoding. We propose an approach to controllably generate circularly polarized light from a circular hole in a metal film using an electron beam by coherently exciting transition radiation and light scattering from the hole through surface plasmon polaritons. The circularly polarized light generation is confirmed by fully polarimetric four-dimensional cathodoluminescence mapping, where angle-resolved spectra are simultaneously obtained. The obtained intensity and Stokes maps show clear interference fringes as well as almost fully circularly polarized light generation with controllable parities by the electron beam position. By applying this approach to a three-hole system, a vortex field with a phase singularity is visualized in the middle of three holes.

In self-intercalated two-dimensional (ic-2D) materials, understanding the local chemical environment and the topology of the filling site remains elusive, and the subsequent correlation with the macroscopically manifested physical properties has rarely been investigated. Herein, highly crystalline gram-scale ic-2D Ta 1.33 S 2 crystals were successfully grown by the high-pressure high-temperature method. Employing combined atomic-resolution scanning transmission electron microscopy annular dark field imaging and density functional theory calculations, we systematically unveiled the atomic structures of an atlas of stacking registries in a well-defined √3(a) × √3(a) Ta 1.33 S 2 superlattice. Ferromagnetic order was observed in the AC' stacking registry, and it evolves into an antiferromagnetic state in AA/AB/AB' stacking registries; the AA' stacking registry shows ferrimagnetic ordering. Therefore, we present a novel approach for fabricating large-scale highly crystalline ic-2D crystals and shed light on a powerful means of modulating the magnetic order of ic-2D systems via stacking engineering, i.e., stackingtronics.

Retaining ferroelectricity in ultrathin films or nanostructures is crucial for miniaturizing ferroelectric devices, but it is a challenging task due to intrinsic depolarization and size effects. In this study, we have shown that it is possible to stably maintain in-plane polarization in an extremely thin, one-unit-cell thick epitaxial Bi 2 WO 6 film. The use of a perfectly lattice-matched NdGaO 3 (110) substrate for the Bi 2 WO 6 film minimizes strain and enhances stability. We attribute the residual polarization in this ultrathin film to the crystal stability of the Bi-O octahedral framework against structural distortions. Our findings suggest that ferroelectricity can surpass the critical thickness limit through proper strain engineering, and the Bi 2 WO 6 /NdGaO 3 (110) system presents a potential platform for designing low-energy consumption, nonvolatile ferroelectric memories.

Phase transformation─a universal phenomenon in materials─plays a key role in determining their properties. Resolving complex phase domains in materials is critical to fostering a new fundamental understanding that facilitates new material development. So far, although conventional classification strategies such as order-parameter methods have been developed to distinguish remarkably disparate phases, highly accurate and efficient phase segmentation for material systems composed of multiphases remains unavailable. Here, by coupling hard-attention-enhanced U-Net network and geometry simulation with atomic-resolution transmission electron microscopy, we successfully developed a deep-learning tool enabling automated atom-by-atom phase segmentation of intertwined phase domains in technologically important cathode materials for lithium-ion batteries. The new strategy outperforms traditional methods and quantitatively elucidates the correlation between the multiple phases formed during battery operation. Our work demonstrates how deep learning can be employed to foster an in-depth understanding of phase transformation-related key issues in complex materials.

Bulk Td -WTe 2 is a semimetal, while its monolayer counterpart is a two-dimensional (2D) topological insulator. Recently, electronic transport resembling a Luttinger liquid state was found in twisted-bilayer WTe 2 (tWTe 2 ) with a twist angle of ∼5°. Despite the strong interest in 2D WTe 2 systems, little experimental information is available about their intrinsic microstructure, leaving obstacles in modeling their physical properties. The monolayer, and consequently tWTe 2 , are highly air-sensitive, and therefore, probing their atomic structures is difficult. In this study, we develop a robust method for atomic-resolution visualization of monolayers and tWTe 2 obtained through mechanical exfoliation and fabrication. We confirm the high crystalline quality of mechanically exfoliated WTe 2 samples and observe that tWTe 2 with twist angles of ∼5 and ∼2° retains its pristine moiré structure without substantial deformations or reconstructions. The results provide a structural foundation for future electronic modeling of monolayer and tWTe 2 moiré lattices.

Two-dimensional (2D) materials have generated interest in the scientific community because of the advanced electronic applications they might offer. Powerful electron beam microscopes have been used not only to evaluate the structures of these materials but also to manipulate them by forming vacancies, nanofragments, and nanowires or joining nanoislands together. In this work, we show that the electron beam in a scanning transmission electron microscope (STEM) can be used in yet another way: to mediate the synthesis of 2D 1H-MoSe2 from Mo-decorated 2D β-FeSe and simultaneously image the process on the atomic scale. This is quite remarkable given the different crystal structures of the reactant (square lattice β-FeSe) and the product (hexagonal lattice 1H-MoSe2). The feasibility of the transformation was first explored by theoretical calculations that predicted that the reaction is exothermic. Furthermore, a theoretical reaction path to forming a stable 1H-MoSe2 nucleation kernel within pure β-FeSe was found, demonstrating that the pertinent energy barriers are smaller than the energy supplied by the STEM electron beam. [ABSTRACT FROM AUTHOR]

Over the past decade, III–V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb–InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb–InAs nanowire TFETs. STEM–EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb–InAs nanowires for TFET applications. [ABSTRACT FROM AUTHOR]

The ultimate challenge for the development of new multiferroics with enhanced properties lies in achieving nanoscale control of the coupling between different ordering parameters. In oxide-based multiferroics, substitutional cation dopants offer the unparalleled possibility to modify both the electric and magnetic properties at a local scale. Herein it is demonstrated the formation of a dopant-controlled polar pattern in BiFeO3 leading to the spontaneous instauration of periodic polarization waves. In particular, nonpolar Ca-doped rich regions act as spacers between consecutive dopant-depleted regions displaying coupled ferroelectric states. This alternation of layers with different ferroelectric state creates a novel vertical polar structure exhibiting giant polarization gradients as large as 70 µC cm-2 across 30 Å thick domains. The drastic change in the polar state of the film is visualized using high-resolution differential phase-contrast imaging able to map changes in ferroelectric polarization at atomic scale. Furthermore, a periodic distortion in the Fe--O--Fe bonding angle suggests a local variation in the magnetic ordering. The findings provide a new insight into the role of doping and reveal hitherto unexplored means to tailor the functional properties of multiferroics by doping engineering. [ABSTRACT FROM AUTHOR]

Nanocrystalline materials often exhibit extraordinary mechanical and physical properties but their applications at elevated temperatures are impaired by the rapid grain growth. Moreover, the grain growth in nanocrystalline oxide nanofibers at high temperatures can occur at hundreds of degrees lower than that would occur in corresponding bulk nanocrystalline materials, which would eventually break the fibers. Herein, by characterizing a model system of scandia-stabilized zirconia using hot-stage in situ scanning transmission electron microscopy, we discover that the enhanced grain growth in nanofibers is initiated at the surface. Subsequently, we demonstrate that coating the fibers with nanometer-thick amorphous alumina layer can enhance their temperature stability by nearly 400 °C via suppressing the surface-initiated grain growth. Such a strategy can be effectively applied to other oxide nanofibers, such as samarium-doped ceria, yttrium-stabilized zirconia, and lanthanum molybdate. The nanocoatings also increase the flexibility of the oxide nanofibers and stabilize the high-temperature phases that have 10 times higher ionic conductivity. This study provides new insights into the surface-initiated grain growth in nanocrystalline oxide nanofibers and develops a facile yet innovative strategy to improve the high-temperature stability of nanofibers for a broad range of applications. [ABSTRACT FROM AUTHOR]

Ferroelectric flux-closures are very promising in high-density storage and other nanoscale electronic devices. To make the data bits addressable, the nanoscale flux-closures are required to be periodic via a controlled growth. Although flux-closure quadrant arrays with 180° domain walls perpendicular to the interfaces (V-closure) have been observed in strained ferroelectric PbTiO3 films, the flux-closure quadrants therein are rather asymmetric. In this work, we report not only a periodic array of the symmetric flux-closure quadrants with 180° domain walls parallel to the interfaces (H-closure) but also a large scale alternative stacking of the V- and H-closure arrays in PbTiO3/SrTiO3 multilayers. On the basis of a combination of aberration-corrected scanning transmission electron microscopic imaging and phase field modeling, we establish the phase diagram in the layer-by-layer two-dimensional arrays versus the thickness ratio of adjacent PbTiO3 films, in which energy competitions play dominant roles. The manipulation of these flux-closures may stimulate the design and development of novel nanoscale ferroelectric devices with exotic properties. [ABSTRACT FROM AUTHOR]

Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst-ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal-semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal-nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal-support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au-nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I-V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I-V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au-nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au-nanowire systems cannot presently deliver. [ABSTRACT FROM AUTHOR]

Diverse topological defects arise in hexagonal manganites, such as ferroelectric vortices, as well as neutral and charged domain walls. The topological defects are intriguing because their low symmetry enables unusual couplings between structural, charge, and spin degrees of freedom, holding great potential for novel types of functional 2D and 1D systems. Despite the considerable advances in analyzing the different topological defects in hexagonal manganites, the understanding of their key intrinsic properties is still rather limited and disconnected. In particular, a rapidly increasing number of structural variants is reported without clarifying their relation, leading to a zoo of seemingly unrelated topological textures. Here, we combine picometer-precise scanning-transmission-electron microscopy with Landau theory modeling to clarify the inner structure of topological defects in Er1-xZrxMnO3. By performing a comprehensive parametrization of the inner atomic defect structure, we demonstrate that one primary length scale drives the morphology of both vortices and domain walls. Our findings lead to a unifying general picture of this type of structural topological defects. We further derive novel fundamental and universal properties, such as unusual bound-charge distributions and electrostatics at the ferroelectric vortex cores with emergent U(1) symmetry. [ABSTRACT FROM AUTHOR]

A Ruddlesden-Popper (RP) type structure is well-known in oxide perovskites and is related to many interesting properties such as superconductivity and ferroelectricity. However, the RP phase has not yet been discovered in inorganic halide perovskites. Here, we report the direct observation of unusual structure in two-dimensional CsPbBr3 nanosheets which could be interpreted as the RP phase based on model simulations. Structural details of the plausible RP domains and domain boundaries between the RP and conventional perovskite phases have been revealed on the atomic level using aberration-corrected scanning transmission electron microscopy. The finding marks a major advance toward future inorganic halide RP phase synthesis and theoretical modeling, as well as unraveling their structure-property relationship. [ABSTRACT FROM AUTHOR]

Atomic chains are perfect systems for getting fundamental insights into the electron dynamics and coupling between the electronic and ionic degrees of freedom in one-dimensional metals. Depending on the band filling, they can exhibit Peierls instabilities (or charge density waves), where equally spaced chain of atoms with partially filled band is inherently unstable, exhibiting spontaneous distortion of the lattice that further leads to metal-insulator transition in the system. Here, using high-resolution scanning transmission electron microscopy, we directly image the atomic structures of a chain of iodine atoms confined inside carbon nanotubes. In addition to long equidistant chains, the ones consisting of iodine dimers and trimers were also observed, as well as transitions between them. First-principles calculations reproduce the experimentally observed bond lengths and lattice constants, showing that the ionic movement is largely unconstrained in the longitudinal direction, while naturally confined by the nanotube in the lateral directions. Moreover, the trimerized chain bears the hallmarks of a charge density wave. The transition is driven by changes in the charge transfer between the chain and the nanotube and is enabled by the charge compensation and additional screening provided by the nanotube. [ABSTRACT FROM AUTHOR]

Ferroelectrics hold promise for sensors, transducers, and telecommunications. With the demand of electronic devices scaling down, they take the form of nanoscale films. However, the polarizations in ultrathin ferroelectric films are usually reduced dramatically due to the depolarization field caused by incomplete charge screening at interfaces, hampering the integrations of ferroelectrics into electric devices. Here, we design and fabricate a ferroelectric/multiferroic PbTiO3/BiFeO3 system, which exhibits discontinuities in both chemical valence and ferroelectric polarization across the interface. Aberration-corrected scanning transmission electron microscopic study reveals an 8% elongation of out-of-plane lattice spacing associated with 104%, 107%, and 39% increments of ΔTi, ΔO1, and ΔO2 in the PbTiO3 layer near the head-to-tail polarized interface, suggesting an over ~70% enhancement of polarization compared with that of bulk PbTiO3. Besides that in PbTiO3, polarization in the BiFeO3 is also remarkably enhanced. Electron energy loss spectrum and X-ray photoelectron spectroscopy investigations demonstrate the oxygen vacancy accumulation as well as the transfer of Fe3+ to Fe2+ at the interface. On the basis of the polar catastrophe model, FeO2/PbO interface is determined. First-principles calculation manifests that the oxygen vacancy at the interface plays a predominate role in inducing the local polarization enhancement. We propose a charge transfer mechanism that leads to the remarkable polarization increment at the PbTiO3/BiFeO3 interface. This study may facilitate the development of nanoscale ferroelectric devices by tailing the coupling of charge and lattice in oxide heteroepitaxy. [ABSTRACT FROM AUTHOR]

Dislocations, one-dimensional lattice defects, are known to strongly interact with impurity atoms in a crystal. This interaction is generally explained on the basis of the long-range strain field of the dislocation. In ionic crystals, the impurity-dislocation interactions must be influenced by the electrostatic effect in addition to the strain effect. However, such interactions have not been verified yet. Here, we show a direct evidence of the electrostatic impurity-dislocation interaction in α-Al2O3 by visualizing the dopant atom distributions at dislocation cores using atomic-resolution scanning transmission electron microscopy (STEM). It was found that the dopant segregation behaviors strongly depend on the kind of elements, and their valence states are considered to be a critical factor. The observed segregation behaviors cannot be explained by the elastic interactions only, but can be successfully understood if the electrostatic interactions are taken into account. The present findings will lead to the precise and quantitative understanding of impurity induced dislocation properties in many materials and devices. [ABSTRACT FROM AUTHOR]

Two-dimensional materials offer a remarkably rich materials platform to study the origin of different material behaviors at the atomic level, and doping provides a key means of tailoring such materials' functional properties. The local atomic structure around such dopants can be critically important in determining the material's behavior as it could modulate scattering, catalytic activity, electronic and magnetic properties, and so forth. Here, using aberration-corrected scanning transmission electron microscopy (STEM) with sub-Ångstrom resolution in conjunction with density functional theory calculations, we demonstrate a strong coupling between Mo dopants and two types of defects in WS2 monolayers: sulfur monovacancies and grain boundaries. Although Mo does occupy a transition metal lattice site, it is not an ideal substitutional dopant: 80% of the S vacancies identified by STEM colocalize with Mo dopants, an affinity that appears to be enhanced by symmetry breaking of a partially occupied midgap defect state. Although a Mo dopant by itself does not considerably distort the WS2 lattice, it induces substantial lattice deformation by apparently facilitating the charging of a sulfur monovacancy paired with it, which is consistent with the results of first-principles calculations. This coupling of foreign substitutional dopants with vacancies could potentially be exploited to control the distribution and location of chalcogenide vacancies within transition metal dichalcogenides (TMD), by segregating vacancies into regions of high Mo concentration that are purposely placed away from active regions of TMD-based devices. [ABSTRACT FROM AUTHOR]

Determining the formation and growth mechanism of bimetallic nanoparticles (NPs) with atomic detail is fundamental to synthesize efficient "catalysts by design". However, an understanding of the elementary steps which take place during their synthesis remains elusive. Herein, we have exploited scanning transmission electron microscopy coupled to energy-dispersive X-ray spectroscopy, operando wide angle and small-angle X-ray scattering, and electrochemistry to unveil the formation and growth mechanism of hollow PtNi/C NPs. Such NPs, composed of a PtNi shell surrounding a nanoscale void, catalyze efficiently and sustainably the oxygen reduction reaction (ORR) in an acidic electrolyte. Our step-by-step study reveals that (i) Ni-rich/C NPs form first, before being embedded in a NixByOz shell, (ii) the combined action of galvanic displacement and the nanoscale Kirkendall effect then results in the sequential formation of Ni-rich core@Pt-rich/C shell and ultimately hollow PtNi/C NPs. The electrocatalytic properties for the ORR and the stability of the different synthesis intermediates were tested and structure-activity-stability relationships established both in acidic and alkaline electrolytes. Beyond its interest for the ORR electrocatalysis, this study also presents a methodology that is capable to unravel the formation and growth mechanism of various nanomaterials including preferentially shaped metal NPs, core@shell NPs, onion-like NPs, Janus NPs, or a combination of several of these structures. [ABSTRACT FROM AUTHOR]

Thermal runaways triggered by the oxygen release from oxide cathode materials pose a major safety concern for widespread application of lithium ion batteries. Utilizing in situ aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) at high temperatures, we show that oxygen release from LixCoO2 cathode crystals is occurring at the surface of particles. We correlated this local oxygen evolution from the LixCoO2 structure with local phase transitions spanning from layered to spinel and then to rock salt structure upon exposure to elevated temperatures. Ab initio molecular dynamics simulations (AIMD) results show that oxygen release is highly dependent on LixCoO2 facet orientation. While the [001] facets are stable at 300 °C, oxygen release is observed from the [012] and [104] facets, where under-coordinated oxygen atoms from the delithiated structures can combine and eventually evolve as O2. The novel understanding that emerges from the present study provides in-depth insights into the thermal runaway mechanism of Li-ion batteries and can assist the design and fabrication of cathode crystals with the most thermally stable facets. [ABSTRACT FROM AUTHOR]

In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well-aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and scanning TEM (STEM). We developed a detection method in the STEM that is capable of recording the direction of the scattered electron beam and that is extremely sensitive to the local stacking of atoms. A comparison between experimental data and simulated models shows that the heterostructure effectively bends in the out-of-plane direction, producing an undulated structure having a periodicity that matches the moiré wavelength. We attribute this rippling to the interlayer interaction and also show how this affects the intralayer strain in each layer. [ABSTRACT FROM AUTHOR]

Selecting the electrical properties of nanomaterials is essential if their potential as manufacturable devices is to be reached. Here, we show that the addition or removal of native semiconductor material at the edge of a nanocontact can be used to determine the electrical transport properties of metal-nanowire interfaces. While the transport properties of as-grown Au nanocatalyst contacts to semiconductor nanowires are well-studied, there are few techniques that have been explored to modify the electrical behavior. In this work, we use an iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the effects of chemical processes that create structural changes at the contact interface edge. A strong metal-support interaction that encapsulates the Au nanocontacts over time, adding ZnO material to the edge region, gives rise to ohmic transport behavior due to the enhanced quantum-mechanical tunneling path. Removal of the extraneous material at the Au-nanowire interface eliminates the edge-tunneling path, producing a range of transport behavior that is dependent on the final interface quality. These results demonstrate chemically driven processes that can be factored into nanowire-device design to select the final properties. [ABSTRACT FROM AUTHOR]

Phonon scattering at grain boundaries (GBs) is significant in controlling the nanoscale device thermal conductivity. However, GBs could also act as waveguides for selected modes. To measure localized GB phonon modes, milli-electron volt (meV) energy resolution is needed with subnanometer spatial resolution. Using monochromated electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) we have mapped the 60 meV optic mode across GBs in silicon at atomic resolution and compared it to calculated phonon densities of states (DOS). The intensity is strongly reduced at GBs characterized by the presence of 5- and 7-fold rings where bond angles differ from the bulk. The excellent agreement between theory and experiment strongly supports the existence of localized phonon modes and thus of GBs acting as waveguides.

Topological textures of ferroelectric polarizations have promise as alternative devices for future information technology. A polarization rotation inevitably deviates from the stable orientation in axial ferroelectrics, but local energy losses compromise the global symmetry, resulting in a distorted shape of the topological vortex or inhibiting the vortex. Easy planar isotropy helps to promote rotating structures and, accordingly, to facilitate access to nontrivial textures. Here, we investigate the domain structure of an epitaxial thin film of bismuth tungsten oxide (Bi 2 WO 6 ) grown on a (001) SrTiO 3 substrate. By using angle-resolved piezoresponse force microscopy and scanning transmission electron microscopy, we find the existence of a hidden phase with ⟨100⟩-oriented ferroelectric polarizations in the middle of the four variant ⟨110⟩-oriented polarization domains, which assists in the formation of flux closure domains. The results suggest that this material is one step closer to becoming an isotropic two-dimensional polar material.

Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of utmost necessity to streamline further developments. We demonstrate that electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM can be used to quickly map SEI components and quantify LixSi alloys from single experiments with resolutions down to 5 nm. Exploiting the low-loss part of the EEL spectrum allowed us to circumvent the degradation phenomena that have so far crippled the application of this technique on such beam-sensitive compounds. Our results provide unprecedented insight into silicon aging mechanisms in full cell configuration. We observe the morphology of the SEI to be extremely heterogeneous at the particle scale but with clear chemical evolutions with extended cycling coming from both SEI accumulation and a transition from lithium-rich carbonate-like compounds to lithium-poor ones. Thanks to the retrieval of several results from a single data set we were able to correlate local discrepancies in lithiation to the initial crystallinity of silicon as well as to the local SEI chemistry and morphology. This study emphasizes how initial heterogeneities in the percolating electronic network and the porosity affect SiNPs aggregates along cycling. These findings pinpoint the crucial role of an optimized formulation in silicon-based thick electrodes. [ABSTRACT FROM AUTHOR]

We investigate the variation of the bandgap energy of single quantum dots of CsPbBr3 inorganic halide perovskite as a function of size and shape and upon embedding within an ensemble. For that purpose, we make use of valence-loss electron spectroscopy with Z-contrast annular dark-field (ADF) imaging in a state-of-the-art low-voltage monochromatic scanning transmission electron microscope. In the experiment, energy absorption is directly mapped onto individual quantum dots, whose dimensions and location are simultaneously measured to the highest precision. In that way, we establish an intimate relation between quantum dot size and even shape and its bandgap energy on a single object level. We explicitly follow the bandgap increase in smaller quantum dots due to quantum confinement and demonstrate that it is predominantly governed by the smallest of the three edges of the cuboidal perovskite dot. We also show the presence of an effective coupling between proximal dots in an ensemble, leading to band structure modification. These unique insights are directly relevant to the development of custom-designed quantum structures and solids which will be realized by purposeful assemblage of individually characterized and selected quantum dots, serving as building blocks. [ABSTRACT FROM AUTHOR]

The internal structure of hollow AgAu nanorods created by partial galvanic replacement was manipulated reversibly, and its effect on optical properties was mapped with nanometer resolution. Using the electron beam in a scanning transmission electron microscope to create solvated electrons and reactive radicals in an encapsulated solution-filled cavity in the nanorods, Ag ions were reduced nearby the electron beam, reshaping the core of the nanoparticles without affecting the external shape. The changes in plasmon-induced near-field properties were then mapped with electron energy-loss spectroscopy without disturbing the internal structure, and the results are supported by finite-difference time-domain calculations. This reversible shape and near-field control in a hollow nanoparticle actuated by an external stimulus introduces possibilities for applications in reprogrammable sensors, responsive materials, and optical memory units. Moreover, the liquid-filled nanorod cavity offers new opportunities for in situ microscopy of chemical reactions. [ABSTRACT FROM AUTHOR]