1. Robust and Selective Switching of an FeIII Spin-Crossover Compound on Cu2N/Cu(100) with Memristance Behavior
- Author
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Torben Jasper-Toennies, Felix Tuczek, Richard Berndt, Hanne Jacob, Sujoy Karan, and Manuel Gruber
- Subjects
Spin states ,Condensed matter physics ,Spintronics ,Chemistry ,Mechanical Engineering ,Conductance ,Bioengineering ,02 engineering and technology ,General Chemistry ,Substrate (electronics) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,law.invention ,Chemical physics ,Spin crossover ,law ,Molecule ,General Materials Science ,Density functional theory ,Scanning tunneling microscope ,0210 nano-technology - Abstract
The switching between two spin states makes spin-crossover molecules on surfaces very attractive for potential applications in molecular spintronics. Using scanning tunneling microscopy, the successful deposition of [Fe(pap)2]+ (pap = N-2-pyridylmethylidene-2-hydroxyphenylaminato) molecules on Cu2N/Cu(100) surface is evidenced. The deposited FeIII spin-crossover compound is controllably switched between three different states, each of them exhibiting a characteristic tunneling conductance. The conductance is therefore employed to readily read the state of the molecules. A comparison of the experimental data with the results of density functional theory calculations reveals that all Fe(pap)2 molecules are initially in their high-spin state. The two other states are compatible with the low-spin state of the molecule but differ with respect to their coupling to the substrate. As a proof of concept, the reversible and selective nature of the switching is used to build a two-molecule memory.
- Published
- 2017
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