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Wereport the first experimental demonstration of a three-terminalnanoelectromechanical field effect transistor (NEMFET) with measurablesubthreshold slope as small as 6 mV/dec at room temperature and aswitching voltage window of under 2 V. The device operates by modulatingdrain current through a suspended nanowire channel via an insulatedgate electrode, thus eliminating the need for a conducting movingelectrode, and yields devices that reliably switch on/off for up to130 cycles. Radio-frequency measurements have confirmed operationat 125 MHz. Our measurements and simulations suggest that the NEMFETdesign is scalable toward sub-1 V ultrahigh-frequency operation forfuture low-power computing systems. [ABSTRACT FROM AUTHOR]