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The bottom-up synthesis process often allows the growth of metastable phase nanowires instead of the thermodynamically stable phase. Herein, we synthesized Cd3As2 nanowires with a controlled three-...

The bottom-up synthesis process often allows the growth of metastable phase nanowires instead of the thermodynamically stable phase. Herein, we synthesized Cd

We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd

In recent years, methylammonium lead halide (MAPbX3, where X = Cl, Br, and I) perovskites have attracted tremendous interest caused by their outstanding photovoltaic performance. Mixed halides have been frequently used as the active layer of solar cells, as a result of their superior physical properties as compared to those of traditionally used pure iodide. Herein, we report a remarkable finding of reversible halide-exchange reactions of MAPbX3, which facilitates the synthesis of a series of mixed halide perovskites. We synthesized MAPbBr3 plate-type nanocrystals (NCs) as a starting material by a novel solution reaction using octylamine as the capping ligand. The synthesis of MAPbBr(3-x)Clx and MAPbBr(3-x)Ix NCs was achieved by the halide exchange reaction of MAPbBr3 with MACl and MAI, respectively, in an isopropyl alcohol solution, demonstrating full-range band gap tuning over a wide range (1.6-3 eV). Moreover, photodetectors were fabricated using these composition-tuned NCs; a strong correlation was observed between the photocurrent and photoluminescence decay time. Among the two mixed halide perovskite series, those with I-rich composition (x = 2), where a sole tetragonal phase exists without the incorporation of a cubic phase, exhibited the highest photoconversion efficiency. To understand the composition-dependent photoconversion efficiency, first-principles density-functional theory calculations were carried out, which predicted many plausible configurations for cubic and tetragonal phase mixed halides.

Phase-change nanowires (NWs) have emerged as critical materials for fast-switching nonvolatile memory devices. In this study, we synthesized a series of mGeTe·Bi2Te3 (GBT) pseudobinary alloy NWs—Ge3Bi2Te6 (m = 3), Ge4Bi2Te7 (m = 4), Ge5Bi2Te8 (m = 5), Ge6Bi2Te9 (m = 6), and Ge8Bi2Te11 (m = 8)—and investigated their composition-dependent thermal stabilities and electrical properties. As m decreases, the phase of the NWs evolves from the cubic (C) to the hexagonal (H) phase, which produces unique superlattice structures that consist of periodic 2.2–3.8 nm slabs for m = 3–8. In situ temperature-dependent transmission electron microscopy reveals the higher thermal stability of the compositions with lower m values, and a phase transition from the H phase into the single-crystalline C phase at high temperatures (400 °C). First-principles calculations, performed for the superlattice structures (m = 1–8) of GBT and mGeTe·Sb2Te3 (GST), show an increasing stability of the H phase (versus the C phase) with decreasin...

Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn3P2) and zinc arsenide (Zn3As2) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn3(P1–xAsx)2 NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 ≤ x ≤ 1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn3P2 and Zn3As2 NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the ...

Phase-change nanowires (NWs) have emerged as critical materials for fast-switching nonvolatile memory devices. In this study, we synthesized a series of mGeTe·Bi2Te3 (GBT) pseudobinary alloy NWs-Ge3Bi2Te6 (m = 3), Ge4Bi2Te7 (m = 4), Ge5Bi2Te8 (m = 5), Ge6Bi2Te9 (m = 6), and Ge8Bi2Te11 (m = 8)-and investigated their composition-dependent thermal stabilities and electrical properties. As m decreases, the phase of the NWs evolves from the cubic (C) to the hexagonal (H) phase, which produces unique superlattice structures that consist of periodic 2.2-3.8 nm slabs for m = 3-8. In situ temperature-dependent transmission electron microscopy reveals the higher thermal stability of the compositions with lower m values, and a phase transition from the H phase into the single-crystalline C phase at high temperatures (400 °C). First-principles calculations, performed for the superlattice structures (m = 1-8) of GBT and mGeTe·Sb2Te3 (GST), show an increasing stability of the H phase (versus the C phase) with decreasing m; the difference in stability being more marked for GBT than for GST. The calculations explain remarkably the phase evolution of the GBT and GST NWs as well as the composition-dependent thermal stabilities. Measurement of the current-voltage curves for individual GBT NWs shows that the resistivity is in the range 3-25 mΩ·cm, and the resistivity of the H phase is lower than that of the C phase, which has been supported by the calculations.

Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn3P2) and zinc arsenide (Zn3As2) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn3(P1-xAsx)2 NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 ≤ x ≤ 1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn3P2 and Zn3As2 NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the Zn-depleted indium catalytic nanoparticles which favor the growth of hexagonal phases. The formation of a solid solution at all compositions allowed the continuous tuning of the band gap (1.0-1.5 eV). Photocurrent measurements were performed on individual NWs by fabricating photodetector devices; the single-crystalline NWs with [110] growth direction exhibit a higher photoconversion efficiency compared to the twinned crystalline NWs with [111] or [112] growth direction.

Multicomponent nanowires (NWs) are of great interest for integrated nanoscale optoelectronic devices owing to their widely tunable band gaps. In this study, we synthesize a series of (GaP)(1-x)(ZnS)(x) (0 ≤ x ≤ 1) pseudobinary alloy NWs using the vapor transport method. Compositional tuning results in the phase evolution from the zinc blende (ZB) (x0.4) to the wurtzite (WZ) phase (x0.7). A coexistence of ZB and WZ phases (x = 0.4-0.7) is also observed. In the intermediate phase coexistence range, a core-shell structure is produced with a composition of x = 0.4 and 0.7 for the core and shell, respectively. The band gap (2.4-3.7 eV) increases nonlinearly with increasing x, showing a significant bowing phenomenon. The phase evolution leads to enhanced photoluminescence emission. Strikingly, the photoluminescence spectrum shows a blue-shift (70 meV for x = 0.9) with increasing excitation power, and a wavelength-dependent decay time. Based on the photoluminescence data, we propose a type-II pseudobinary heterojunction band structure for the single-crystalline WZ phase ZnS-rich NWs. The slight incorporation of GaP into the ZnS induces a higher photocurrent and excellent photocurrent stability, which opens up a new strategy for enhancing the performance of photodetectors.

Scaling-down of phase change materials to a nanowire (NW) geometry is critical to a fast switching speed of nonvolatile memory devices. Herein, we report novel composition-phase-tuned GeSbTe NWs, synthesized by a chemical vapor transport method, which guarantees promising applications in the field of nanoscale electric devices. As the Sb content increased, they showed a distinctive rhombohedral-cubic-rhombohedral phase evolution. Remarkable superlattice structures were identified for the Ge(8)Sb(2)Te(11), Ge(3)Sb(2)Te(6), Ge(3)Sb(8)Te(6), and Ge(2)Sb(7)Te(4) NWs. The coexisting cubic-rhombohedral phase Ge(3)Sb(2)Te(6) NWs exhibited an exclusively uniform superlattice structure consisting of 2.2 nm period slabs. The rhombohedral phase Ge(3)Sb(8)Te(6) and Ge(2)Sb(7)Te(4) NWs adopted an innovative structure; 3Sb(2) layers intercalated the Ge(3)Sb(2)Te(6) and Ge(2)Sb(1)Te(4) domains, respectively, producing 3.4 and 2.7 nm period slabs. The current-voltage measurement of the individual NW revealed that the vacancy layers of Ge(8)Sb(2)Te(11) and Ge(3)Sb(2)Te(6) decreased the electrical conductivity.