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Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2xSe2(1-x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ~ 6 meV and valley polarization as high as ~60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the BN/WS0.6Se1.4/BN van der Waals heterostructure, which renders the otherwise optically silent Raman modes visible. In addition, the emerging Raman signals can be drastically enhanced by the resonant coupling to the 2s state of the monolayer WS0.6Se1.4 A exciton. The BN/WS2xSe2(1-x)/BN van der Waals heterostructure with a tunable bandgap thus provides an exciting platform for exploring the valley degree of freedom and emerging excitonic physics in two-dimension.

Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. Although WS

In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS$_2$ field-effect transistors. We find that ReS$_2$ exfoliated on SiO$_2$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $��_i$ ~30 cm$^2$/Vs at $T = 300$ K which increases up to ~350 cm$^2$/Vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic $T^2$-dependence. This indicates that the band structure of 1T$^{\prime}$-ReS$_2$ is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T$ and $n$, we find that the metallic state of ReS$_2$ results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides., 25 pages, 5 figures

Resonant Raman spectroscopy is a powerful tool for providing information about excitons and exciton-phonon coupling in two-dimensional materials. We present here resonant Raman experiments of single-layered WS2 and WSe2 using more than 25 laser lines. The Raman excitation profiles of both materials show unexpected differences. All Raman features of WS2 monolayers are enhanced by the first-optical excitations (with an asymmetric response for the spin-orbit related XA and XB excitons), whereas Raman bands of WSe2 are not enhanced at XA/B energies. Such an intriguing phenomenon is addressed by DFT calculations and by solving the Bethe-Salpeter equation. These two materials are very similar. They prefer the same crystal arrangement, and their electronic structure is akin, with comparable spin-orbit coupling. However, we reveal that WS2 and WSe2 exhibit quite different exciton-phonon interactions. In this sense, we demonstrate that the interaction between XC and XA excitons with phonons explains the different Raman responses of WS2 and WSe2, and the absence of Raman enhancement for the WSe2 modes at XA/B energies. These results reveal unusual exciton-phonon interactions and open new avenues for understanding the two-dimensional materials physics, where weak interactions play a key role coupling different degrees of freedom (spin, optic, and electronic).

We report the use of transition metal nanoparticles (Ni or Co) to longitudinally cut open multiwalled carbon nanotubes in order to create graphitic nanoribbons. The process consists of catalytic hydrogenation of carbon, in which the metal particles cut sp(2) hybridized carbon atoms along nanotubes that results in the liberation of hydrocarbon species. Observations reveal the presence of unzipped nanotubes that were cut by the nanoparticles. We also report the presence of partially open carbon nanotubes, which have been predicted to have novel magnetoresistance properties.(1) The nanoribbons produced are typically 15-40 nm wide and 100-500 nm long. This method offers an alternative approach for making graphene nanoribbons, compared to the chemical methods reported recently in the literature.

In ReS2, a layer-independent direct band gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS2 crystallizes in the 1T'-structure, which leads to anisotropic physical properties and whose concomitant electronic structure might host a nontrivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS2 field-effect transistors. We find that ReS2 exfoliated on SiO2 behaves as an n-type semiconductor with an intrinsic carrier mobility surpassing μ(i) ∼ 30 cm(2)/(V s) at T = 300 K, which increases up to ∼350 cm(2)/(V s) at 2 K. Semiconducting behavior is observed at low electron densities n, but at high values of n the resistivity decreases by a factor of7 upon cooling to 2 K and displays a metallic T(2)-dependence. This suggests that the band structure of 1T'-ReS2 is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of T and n, we find that the metallic state of ReS2 results from a second-order metal-to-insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.

We show extensive theoretical studies related to the generation and characterization of 2D and 3D ordered networks using 1D units that are connected covalently. We experimentally created multi-terminal junctions containing 1D carbon blocks in order to study the most common morphologies and branched structures that could be used in the theoretical design of network models. We found that the mechanical and electronic characteristics of ordered networks based on carbon nanotubes (ON-CNTs) are dominated by their specific super-architecture (hexagonal, cubic, square, and diamond-type). We show that charges follow specific paths through the nodes of the multi-terminal systems, which could result in complex integrated nanoelectronic circuits. The 3D architectures reveal their ability to support extremely high unidirectional stress when their mechanical properties are studied. In addition, these networks are shown to perform better than standard carbon aerogels because of their low mass densities, continuous porosities, and high surface areas.

All self-assembled nanostructures, like carbon nanotubes, exhibit structural imperfections that affect their electronic and mechanical properties and constitute a serious problem for the development of novel electronic nanodevices. Very common defects in nanotubes are pentagon-heptagon pairs, in which the replacement of four hexagons by two pentagons and two heptagons disrupts the perfect hexagonal lattice. In this work, we demonstrate that these defects can be eliminated efficiently with the help of femtosecond laser pulses. By performing nonadiabatic molecular dynamics simulations, we show that in the laser-induced electronic nonequilibrium the pentagon-heptagon pair is transformed back into four hexagons without producing any irreversible damage to the rest of the nanotube.

We demonstrate that carbon nanotori constructed by either coalescing C60 molecules along the 5-fold axis (incorporating pentagons and octagons) or by joining the ends of Haeckelite tubes (containing heptagons, hexagons, and pentagons) exhibit large magnetic moments when an external magnetic field is applied. In particular, we have used a π-orbital nearest-neighbor tight-binding Hamiltonian with the London approximation in order to study the influence of uniform external magnetic fields on various types of torous-like carbon nanostructures with negative and positive Gaussian curvature. We have calculated the ring currents and the induced magnetic moments on these structures. The results reveal the presence of an unexpected magnetic response, which is due to the presence of nonhexagonal carbon rings. Our results could also explain the existence of ferromagnetic nanocarbons. We envisage that coalesced peapods may exhibit unusual magnetic properties.

Here, we demonstrate that by coalescing double-walled carbon nanotubes (DWNTs), a novel and stable structure consisting of flattened tubules containing two single-walled tubes (SWNTs) is created. The process occurs due to the coalescence and reconstruction of the outer shells of DWNTs, leaving the inner cylinders almost intact, the latter being encapsulated inside the large diameter coalesced tube (bicable). We propose that the coalescence process is due to: (1) the thermal activity of the outer shells, which is driven by a surface energy minimization process, and (2) a zipping mechanism followed by atom reconstruction, in which two outer shells interact and anneal.

First-principles (FP) calculations of the electronic and vibrational properties of three different Haeckelite structures have been performed. The relatively low cohesive energies (when compared to C-60) of these phases suggest the possible synthesis of such novel carbon arrangements. In agreement with previous tight-binding calculations (Terrones, H.; Terrones, M.; Hernandez, E.; Grobert, N.; Charlier, J.-C.; Ajayan, P. M. Phys. Rev. Lett. 2000, 84, 1716), the Haeckelite structures exhibit a clear metallic behavior. In addition, within the ab initio framework, we predict the IR and Raman frequencies, which constitute the fingerprint of their structure and allow for their unambiguous identification. STM images and quantum conductances of various tubular Haeckelite structures are also calculated within a tight-binding framework. The three investigated Haeckelite structures are shown to be good candidates of conducting wires with great potential in nanoelectronics. The results presented here provide a catalog of properties that will aid in the identification of other Haeckelite structures as well as carbon systems containing pentagonal and heptagonal defects.

A fascinating structural transformation occurring inside single-walled carbon nanotubes (SWNTs) is the fullerene coalescence, which is responsible for forming stable zeppelinlike carbon molecules. We report in situ transmission electron microscope (TEM) observations revealing sequences of fullerene coalescence induced by electron irradiation on pristine nanotube peapods, together with extensive theoretical investigations of the microscopic mechanism underlying this process. TEM images indicate that the merging of fullerenes results in stable but corrugated tubules (5 to 7 Angstrom in diameter) confined within SWNTs. These observations have been confirmed using a combination of theoretical approaches based on molecular dynamics, empirical potentials, tight-binding methods, Monte Carlo techniques, and first principles calculations. We have fully elucidated the coalescence mechanism of fullerenes inside SWNTs under electron irradiation and thermal annealing. The process occurs via the polymerization Of C-60 molecules followed by surface reconstruction, which can be triggered either by the formation of vacancies (created under electron irradiation) or by surface-energy minimization activated by thermal annealing. These novel tubular forms of carbon contain hexagons, pentagons, heptagons, and octagons. The stability, electronic properties, and electron conductance of the novel tubules are strongly affected by the final geometry of the coalesced fullerene complex. The possibility of forming highly conducting and semiconducting tubular structures suggests new avenues in designing carbon nanowires with specific electronic characteristics.

Two-dimensional molybdenum disulfide (MoS2) is a promising material for optoelectronic devices due to its strong photoluminescence emission. In this work, the photoluminescence of twisted bilayer MoS2 is investigated, revealing a tunability of the interlayer coupling of bilayer MoS2. It is found that the photoluminescence intensity ratio of the trion and exciton reaches its maximum value for the twisted angle 0° or 60°, while for the twisted angle 30° or 90° the situation is the opposite. This is mainly attributed to the change of the trion binding energy. The first-principles density functional theory analysis further confirms the change of the interlayer coupling with the twisted angle, which interprets our experimental results.

Standard spin-polarized density functional theory calculations have been conducted to study the electronic structures and magnetic properties of O and S functionalized zigzag boron nitride nanoribbons (zBNNRs). Unlike the semiconducting and nonmagnetic H edge-terminated zBNNRs, the O edge-terminated zBNNRs have two energetically degenerate magnetic ground states with a ferrimagnetic character on the B edge, both of which are metallic. In contrast, the S edge-terminated zBNNRs are nonmagnetic albeit still metallic. An intriguing coexistence of two different Peierls-like distortions is observed for S edge-termination that manifests as a strong S dimerization at the B zigzag edge and a weak S trimerization at the N zigzag edge, dictated by the band fillings at the vicinity of the Fermi level. Nevertheless, metallicity is retained along the S wire on the N edge due to the partial filling of the band derived from the p(z) orbital of S. A second type of functionalization with O or S atoms embedded in the center of zBNNRs yields semiconducting features. Detailed examination of both types of functionalized zBNNRs reveals that the p orbitals on O or S play a crucial role in mediating the electronic structures of the ribbons. We suggest that O and S functionalization of zBNNRs may open new routes toward practical electronic devices based on boron nitride materials.

The quantum transport properties of graphene nanoribbon networks are investigated using first-principles calculations based on density functional theory. Focusing on systems that can be experimentally realized with existing techniques, both in-plane conductance in interconnected graphene nanoribbons and tunneling conductance in out-of-plane nanoribbon intersections were studied. The characteristics of the ab initio electronic transport through in-plane nanoribbon cross-points is found to be in agreement with results obtained with semiempirical approaches. Both simulations confirm the possibility of designing graphene nanoribbon-based networks capable of guiding electrons along desired and predetermined paths. In addition, some of these intersections exhibit different transmission probability for spin up and spin down electrons, suggesting the possible applications of such networks as spin filters. Furthermore, the electron transport properties of out-of-plane nanoribbon cross-points of realistic sizes are described using a combination of first-principles and tight-binding approaches. The stacking angle between individual sheets is found to play a central role in dictating the electronic transmission probability within the networks.

The atomistic mechanism for the self-assembly of molybdenum into one-dimensional metallic nanowires in a confined environment such as a carbon nanotube is investigated using quantum mechanical calculations. We find that Mo does not organize into linear chains but rather prefers to form four atom per unit cell nanowires that consist of a subunit of a Mo body-centered cubic crystal. Our model explains the 0.3 nm separation between features measured by high-resolution transmission electron microscopy and why the nanotube diameter must be in the 0.70-1.0 nm range to accommodate the smallest stable one-dimensional wire. We also computed the electronic band structure of the Mo wires inside a nanotube and found significant hybridization with the nanotube states, thereby explaining the experimentally observed quenching of fluorescence and the damping of the radial breathing modes as well as an increased resistance to oxidation.

We report the use of chemical vapor deposition (CVD) for the bulk production (grams per day) of long, thin, and highly crystalline graphene ribbons (20-30 microm in length) exhibiting widths of 20-300 nm and small thicknesses (2-40 layers). These layers usually exhibit perfect ABAB... stacking as in graphite crystals. The structure of the ribbons has been carefully characterized by several techniques and the electronic transport and gas adsorption properties have been measured. With this material available to researchers, it should be possible to develop new applications and physicochemical phenomena associated with layered graphene.

In this report, we compare the toxicological effects between pure carbon multiwalled nanotubes (MWNTs) and N-doped multiwalled carbon (CNx) nanotubes. Different doses of tubes were administered in various ways to mice: nasal, oral, intratracheal, and intraperitoneal. We have found that when MWNTs were injected into the mice's trachea, the mice could die by dyspnea depending on the MWNTs doses. However, CNx nanotubes never caused the death of any mouse. We always found that CNx nanotubes were far more tolerated by the mice when compared to MWNTs. Extremely high concentrations of CNx nanotubes administrated directly into the mice's trachea only induced granulomatous inflammatory responses. Importantly, all other routes of administration did not induce signs of distress or tissue changes on any treated mouse. We therefore believe that CNx nanotubes are less harmful than MWNTs or SWNTs and might be more advantageous for bioapplications.

Here we demonstrate that the incorporation of boron (B) atoms between double-walled carbon nanotubes (DWNTs) during thermal annealing (1400-1600 degrees C) results in covalent nanotube "Y" junctions, DWNT coalescence, and the formation of flattened multiwalled carbon nanotubes (MWNTs). These processes occur via the merging of adjacent tubes, which is triggered by B interstitial atoms. We observe that B atom interstitials between DWNTs are responsible for the rapid establishment of covalent connections between neighboring tubes (polymerization), thereby resulting in the fast annealing of the carbon cylinders with B atoms embedded in the newly created carbon nanotube network. Once B is in the lattice, tube faceting (polygonization) starts to occur, and the electronic properties are expected to change dramatically. Therefore, B atoms indeed act as atomic nanotube fusers (or welders), and this process could now be used in assembling novel electronic nanotube devices, nanotube networks, carbon nanofoams and heterojunctions exhibiting p-type electronic properties.

We describe the synthesis of novel monocrystalline FeCo nanowires encapsulated inside multiwalled carbon nanotubes (MWNTs). These FeCo nanowires exhibit homogeneous Fe and Co concentrations and do not contain an external oxide layer due to the presence of insulating nanotube layers. The method involves the aerosol thermolysis of toluene-ferrocene-cobaltocene solutions in inert atmospheres. The materials have been carefully characterized using state-of-the-art high-resolution transmission electron microscopy (HRTEM), electron-energy-loss spectroscopy (EELS), scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX), electron diffraction, HREELS-STM elemental mapping, X-ray powder diffraction, and SQUID magnetometry. We noted that the formation of FeCo alloys occurs at relatively low pyrolytic temperatures (e.g., 650-750 degrees C). These single-crystal nanowires, which have not been reported hitherto, always exhibit the FeCo (110) plane parallel to the carbon nanotube axis. The FeCo nanomaterials have shown large coercive fields at room temperature (e.g., 900 Oe). We envisage that these aligned ferromagnetic nanowires could be used in the fabrication of high-density magnetic storage devices and magnetic composites.

The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped nanotubes is positive, indicating hole-like carriers. In contrast, the nitrogen doped material exhibits negative TEP over the same temperature range, suggesting electron-like conduction. Therefore, the TEP distinct nonlinearites are primarily due to the formation of donor and acceptor states in the B- and N- doped materials. The sharply varying density of states used in our model can be directly correlated to the scanning tunneling spectroscopy studies of these materials., Comment: 4 pages, 3 figures, revtex 4, submitted to PRL

Field emission properties of B-doped carbon nanotubes are investigated from both theoretical and experimental standpoints. Using tight-binding and ab initio calculations, it is observed that B-saturating tip edges of carbon nanotubes induce the presence of large peaks within the local density of states (LDOS) located in an energy region close to the Fermi level (Ef). These localized states suggest a field emission enhancement for the B-doped tubes. In addition, ab initio theoretical results indicate that the work function for B-doped tubes is 1.7 eV lower when compared to pure carbon-terminated nanotubes. Experimentally, it is found that B-doped tubes, which are produced by arc discharge techniques and contain B mainly at the tips, exhibit stable electron field emission at lower turn-on voltages (1.4 V/mum) when compared to pure single- and multiwalled carbon nanotubes (2.8 and 3.0 V/mum, respectively) measured under the same conditions. We strongly believe our results will bring new insights in the fabrication of stable field emission sources.