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Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Mysteries about the origin of friction have remained for centuries. Especially, how friction is tuned by an electric field is still unclear. Present tuning mechanisms mainly focus on the atomic configurations and electrostatic force, yet the role of interfacial electronic properties is not fully understood. Here, we investigate a unique friction tuning effect induced by an electric current in a conductive atomic force microscopy experiment and uncover two main tuning mechanisms of friction by the fluctuation of electronic properties during sliding: (1) electric-field-induced electron density redistribution and (2) current-induced electron transfer. We put forward an electronic level friction model unraveling the relationship between the friction tuning and the electronic property fluctuation (EPF) under electric field/current, which is applicable to tribosystems ranging from conductors to semiconductors and insulators, including two-dimensional material interfaces. This model provides theoretical guidance for tribosystem design and friction control, proposing a new perspective in understanding the origin of friction.

Construction of lateral junctions is essential to generate one-dimensional (1D) confined potentials that can effectively trap quasiparticles. A series of remarkable electronic phases in one dimension, such as Wigner crystallization, are expected to be realized in such junctions. Here, we demonstrate that we can precisely tune the 1D-confined potential with an in situ manipulation technique, thus providing a dynamic way to modify the correlated electronic states at the junctions. We confirm the existence of 1D-confined potential at the homojunction of two single-layer 1T-NbSe

We report the chemical vapor deposition (CVD) growth, characterization, and low-temperature magnetotransport of 1T phase multilayer single-crystalline VTe2 nanoplates. The transport studies reveal ...

With strong spin–orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The ob...

Creation of functional patterns in two-dimensional (2D) materials provides opportunities to extend their potential for applications. Transition-metal dichalcogenides (TMDCs) are suitable 2D materia...

Graphene on SiO

Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to ∼10

Opening a band gap in bilayer graphene (BLG) is of significance for potential applications in graphene-based electronic and photonic devices. Here, we report the generation of a sizable band gap in BLG by intercalating silicene between BLG and Ru substrate. We first grow high-quality Bernal-stacked BLG on Ru(0001) and then intercalate silicene to the interface between the BLG and Ru, which is confirmed by low-energy electron diffraction and scanning tunneling microscopy. Raman spectroscopy shows that the G and 2D peaks of the intercalated BLG are restored to the freestanding-BLG features. Angle-resolved photoelectron spectroscopy measurements show that a band gap of about 0.2 eV opens in the BLG. Density functional theory calculations indicate that the large-gap opening results from a cooperative contribution of the doping and rippling/strain in the BLG. This work provides insightful understanding on the mechanism of band gap opening in BLG and enhances the potential of graphene-based device development.

Molecular rotors on solid surfaces are fundamental components of molecular machines. No matter whether the rotation is activated by heat, electric field or light, it is determined by the intrinsic rotational potential landscape. Therefore, tuning the potential landscape is of great importance for future applications of controlled molecular rotors. Here, using scanning tunneling microscopy (STM), we demonstrate that both tip-molecule distance and sample bias can modify the rotational potential of molecular rotors. We achieve the potential energy difference variations of ∼0.3 meV/pm and ∼18 meV/V between two configurations of a molecular rotor, a tetra- tert-butyl nickel phthalocyanine molecule on Au(111) substrate. Further analysis indicates that the mechanism of modifying the rotational potential is a combination of the van der Waals interaction and the interaction between the molecular dipole and an electric field. This work provides insight into the methods used to modify the effective rotational potential energy of molecular rotors.

Group-V elemental monolayers were recently predicted to exhibit exotic physical properties such as nontrivial topological properties, or a quantum anomalous Hall effect, which would make them very suitable for applications in next-generation electronic devices. The free-standing group-V monolayer materials usually have a buckled honeycomb form, in contrast with the flat graphene monolayer. Here, we report epitaxial growth of atomically thin flat honeycomb monolayer of group-V element antimony on a Ag(111) substrate. Combined study of experiments and theoretical calculations verify the formation of a uniform and single-crystalline antimonene monolayer without atomic wrinkles, as a new honeycomb analogue of graphene monolayer. Directional bonding between adjacent Sb atoms and weak antimonene-substrate interaction are confirmed. The realization and investigation of flat antimonene honeycombs extends the scope of two-dimensional atomically-thick structures and provides a promising way to tune topological properties for future technological applications.

The quantum efficiency or the rate of conversion of incident photon to free electron in photosynthesis is known to be extremely high. It has long been thought that the origin of this efficiency are molecular vibrations leading to a very fast separation of electrons and holes within the involved molecules. However, molecular vibrations are commonly in the range above 100 meV, which is too high for excitations in an ambient environment. Here, we analyze experimental spectra of single organic molecules on metal surfaces at ∼4 K, which often exhibit a pronounced dip. We show that measurements on iron(II) [tetra-(pentafluorophenyl)]porphyrin resolve this single dip at 4 K into a series of step-shaped inelastic excitations at 0.4 K. Via extensive spectral maps under applied magnetic fields and corresponding theoretical analysis we find that the dip is due to ultralow-energy vibrations of the molecular frame, typically in the range below 20 meV. The result indicates that ultralow energy vibrations in organic molecules are much more common than currently thought and may be all-pervasive for molecules above a certain size.

The controlled synthesis of high-quality nitrogen (N) doped single layer graphene on the Ru(0001) surface has been achieved using the N-containing sole precursor azafullerence (C59NH). The synthesis process and doping properties have been investigated on the atomic scale by combining scanning tunneling microscopy and X-ray photoelectron spectroscopy measurements. We find for the first time that the concentration of N-related defects on the N-doped graphene/Ru(0001) surface is tunable by adjusting the dosage of sole precursor and the number of growth cycles. Two primary types of N-related defects have been observed. The predominant bonding configuration of N atoms in the obtained graphene layer is pyridinic N. Our findings indicate that the synthesis from heteroatom-containing sole precursors is a very promising approach for the preparation of doped graphene materials with controlled doping properties.

Silicon-based two-dimensional (2D) materials are uniquely suited for integration in Si-based electronics. Silicene, an analogue of graphene, was recently fabricated on several substrates and was used to make a field-effect transistor. Here, we report that when Ru(0001) is used as a substrate, a range of distinct monolayer silicon structures forms, evolving toward silicene with increasing Si coverage. Low Si coverage produces a herringbone structure, a hitherto undiscovered 2D phase of silicon. With increasing Si coverage, herringbone elbows evolve into silicene-like honeycomb stripes under tension, resulting in a herringbone-honeycomb 2D superlattice. At even higher coverage, the honeycomb stripes widen and merge coherently to form silicene in registry with the substrate. Scanning tunneling microscopy (STM) was used to image the structures. The structural stability and electronic properties of the Si 2D structures, the interaction between the Si 2D structures and the Ru substrate, and the evolution of the...

Two-dimensional topological materials have attracted intense research efforts owing to their promise in applications for low-energy, high-efficiency quantum computations. Group-VA elemental thin films with strong spin-orbit coupling have been predicted to host topologically nontrivial states as excellent two-dimensional topological materials. Herein, we experimentally demonstrated for the first time that the epitaxially grown high-quality antimonene monolayer islands with buckled configurations exhibit significantly robust one-dimensional topological edge states above the Fermi level. We further demonstrated that these topologically nontrivial edge states arise from a single p-orbital manifold as a general consequence of atomic spin-orbit coupling. Thus, our findings establish monolayer antimonene as a new class of topological monolayer materials hosting the topological edge states for future low-power electronic nanodevices and quantum computations.

With strong spin-orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The observation of WAL effect in VSe

Contacting interfaces with physical isolation and weak interactions usually act as barriers for electrical conduction. The electrical contact conductance across interfaces has long been correlated with the true contact area or the "contact quantity". Much of the physical understanding of the interfacial electrical contact quality was primarily based on Landauer's theory or Richardson formulation. However, a quantitative model directly connecting contact conductance to interfacial atomistic structures still remains absent. Here, we measure the atomic-scale local electrical contact conductance instead of local electronic surface states in graphene/Ru(0001) superstructure, via atomically resolved conductive atomic force microscopy. By defining the "quality" of individual atom-atom contact as the carrier tunneling probability along the interatomic electron transport pathways, we establish a relationship between the atomic-scale contact quality and local interfacial atomistic structure. This real-space model unravels the atomic-level spatial modulation of contact conductance, and the twist angle-dependent interlayer conductance between misoriented graphene layers.

Creation of functional patterns in two-dimensional (2D) materials provides opportunities to extend their potential for applications. Transition-metal dichalcogenides (TMDCs) are suitable 2D materials for pattern generation because of properties including alterable polymorphic phases, easy chalcogen-vacancy formation, metal-atom insertion, and alloying. Such patterning can be used for selective functionalization. Here we report the spontaneous formation of long-range, well-ordered 1D patterns in monolayer vanadium diselenide (VSe

We predict theoretical existence of intrinsic two-dimensional organic topological insulator (OTI) states in Cu-dicyanoanthracene (DCA) lattice, a system that has also been grown experimentally on Cu substrate, based on first-principle density functional theory calculations. The pz-orbital Kagome bands having a Dirac point lying exactly at the Fermi level are found in the freestanding Cu-DCA lattice. The tight-binding model analysis, the calculated Chern numbers, and the semi-infinite Dirac edge states within the spin-orbit coupling gaps all confirm its intrinsic topological properties. The intrinsic TI states are found to originate from a proper number of electrons filling of the hybridized bands from Cu atomic and DCA molecular orbitals based on which similar lattices containing noble metal atoms (Au and Cu) and those molecules with two CN groups (DCA and cyanogens) are all predicted to be intrinsic OTIs.

Grain boundaries (GBs) in polycrystalline graphene scatter charge carriers, which reduces carrier mobility and limits graphene applications in high-speed electronics. Here we report the extraction of the resistivity of GBs and the effect of GBs on carrier mobility by direct four-probe measurements on millimeter-sized graphene bicrystals grown by chemical vapor deposition (CVD). To extract the GB resistivity and carrier mobility from direct four-probe intragrain and intergrain measurements, an electronically equivalent extended 2D GB region is defined based on Ohm's law. Measurements on seven representative GBs find that the maximum resistivities are in the range of several kΩ·μm to more than 100 kΩ·μm. Furthermore, the mobility in these defective regions is reduced to 0.4-5.9‰ of the mobility of single-crystal, pristine graphene. Similarly, the effect of wrinkles on carrier transport can also be derived. The present approach provides a reliable way to directly probe charge-carrier scattering at GBs and can be further applied to evaluate the GB effect of other two-dimensional polycrystalline materials, such as transition-metal dichalcogenides (TMDCs).

Silicene, a two-dimensional (2D) honeycomb structure similar to graphene, has been successfully fabricated on an Ir(111) substrate. It is characterized as a (√7×√7) superstructure with respect to the substrate lattice, as revealed by low energy electron diffraction and scanning tunneling microscopy. Such a superstructure coincides with the (√3×√3) superlattice of silicene. First-principles calculations confirm that this is a (√3×√3)silicene/(√7×√7)Ir(111) configuration and that it has a buckled conformation. Importantly, the calculated electron localization function shows that the silicon adlayer on the Ir(111) substrate has 2D continuity. This work provides a method to fabricate high-quality silicene and an explanation for the formation of the buckled silicene sheet.

The capabilities to tune the conduction properties of materials by doping or electric fields are essential for the design of electronic devices. However, in two-dimensional materials substitutional doping has been achieved in only a few systems, such as Nb substitutional doping in MoS2. Surface charge transfer is still one of the popular ways to control whether the conduction is dominated by holes or electrons. Here, we demonstrate that a capping layer of cross-linked poly(methyl methacrylate) modifies the potential in a black phosphorus (BP) layer so that conduction in the absence of an external electric field is dominated by electrons, rather than holes. Using this technique to form adjoining regions dominated by hole and electron conduction, a family of novel planar devices, such as BP-gated diodes, BP bidirectional rectifier, and BP logic inverters, can be fabricated. The devices are potentially useful for electronic applications, including rectification and switching.

Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.

Single-layer transition-metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, spintronics, catalysis, and so on. Here, we demonstrate the epitaxial growth of high-quality single-crystal, monolayer platinum diselenide (PtSe2), a new member of the layered TMDs family, by a single step of direct selenization of a Pt(111) substrate. A combination of atomic-resolution experimental characterizations and first-principle theoretic calculations reveals the atomic structure of the monolayer PtSe2/Pt(111). Angle-resolved photoemission spectroscopy measurements confirm for the first time the semiconducting electronic structure of monolayer PtSe2 (in contrast to its semimetallic bulk counterpart). The photocatalytic activity of monolayer PtSe2 film is evaluated by a methylene-blue photodegradation experiment, demonstrating its practical application as a promising photocatalyst. Mor...

Single-walled carbon nanotube (SWNT)-polymer composites have been fabricated to evaluate the electromagnetic interference (EMI) shielding effectiveness (SE) of SWNTs. Our results indicate that SWNTs can be used as effective lightweight EMI shielding materials. Composites with greater than 20 dB shielding efficiency were obtained easily. EMI SE was tested in the frequency range of 10 MHz to 1.5 GHz, and the highest EMI shielding efficiency (SE) was obtained for 15 wt % SWNT, reaching 49 dB at 10 MHz and exhibiting 15-20 dB in the 500 MHz to 1.5 GHz range. The EMI SE was found to correlate with the dc conductivity, and this frequency range is found to be dominated by reflection. The effects of SWNT wall defects and aspect ratio on the EMI SE were also studied.

The Kondo effect, a widely studied phenomenon in which the scattering of conduction electrons by magnetic impurities increases as the temperature T is lowered, depends strongly on the density of states at the Fermi energy. It has been predicted by theory that magnetic impurities on free-standing monolayer graphene exhibit the Kondo effect and that control of the density of states at the Fermi level by external means can be used to switch the effect on and off. However, though transport data for Co adatoms on graphene monolayers on several substrates have been reported, there exists no evidence for a Kondo effect. Here we probe the role of the substrate on the Kondo effect of Co on graphene by combining low-temperature scanning tunneling microscopy and spectroscopy measurements with density functional theory calculations. We use a Ru(0001) substrate that is known to cause graphene to ripple, yielding a moire superlattice. The experimental data show a sharp Kondo resonance peak near the Fermi energy from only Co adatoms at the edge of atop regions of the moire pattern. The theoretical results show that the variation of the distance from the graphene to the Ru substrate, which controls the spin polarization and local density of states at the Fermi energy, is the key factor for the appearance of the Kondo resonance. The results suggest that rippling of graphene by suitable substrates is an additional lever for tuning and selectively switching the appearance of the Kondo effect.

The development of methods for controlling the motion and arrangement of molecules adsorbed on a metal surface would provide a powerful tool for the design of molecular electronic devices. Recently, metal phthalocyanines (MPc) have been extensively considered for use in such devices. Here we show that applied electric fields can be used to turn off the diffusivity of iron phthalocyanine (FePc) on Au(111) at fixed temperature, demonstrating a practical and direct method for controlling and potentially patterning FePc layers. Using scanning tunneling microscopy, we show that the diffusivity of FePc on Au(111) is a strong function of temperature and that applied electric fields can be used to retard or enhance molecular diffusion at fixed temperature. Using spin-dependent density-functional calculations, we then explore the origin of this effect, showing that applied fields modify both the molecule-surface binding energies and the molecular diffusion barriers through an interaction with the dipolar Fe-Au adsorption bond. On the basis of these results FePc on Au(111) is a promising candidate system for the development of adaptive molecular device structures.