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Your search keyword '"Hofer, Werner"' showing total 10 results
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10 results on '"Hofer, Werner"'

1. Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Author

Guo, Hui, primary, Wang, Xueyan, additional, Huang, Li, additional, Jin, Xin, additional, Yang, Zhenzhong, additional, Zhou, Zhang, additional, Hu, Hai, additional, Zhang, Yu-Yang, additional, Lu, Hongliang, additional, Zhang, Qinghua, additional, Shen, Chengmin, additional, Lin, Xiao, additional, Gu, Lin, additional, Dai, Qing, additional, Bao, Lihong, additional, Du, Shixuan, additional, Hofer, Werner, additional, Pantelides, Sokrates T., additional, and Gao, Hong-Jun, additional

Published
2020
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4. Evidence for Ultralow-Energy Vibrations in Large Organic Molecules

Author

Chen, Hui, primary, Pope, Thomas, additional, Wu, Zhuo-Yan, additional, Wang, Dongfei, additional, Tao, Lei, additional, Bao, De-Liang, additional, Xiao, Wende, additional, Zhang, Jun-Long, additional, Zhang, Yu-Yang, additional, Du, Shixuan, additional, Gao, Song, additional, Pantelides, Sokrates T., additional, Hofer, Werner A., additional, and Gao, Hong-Jun, additional

Published
2017
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5. Insulating SiO2under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Author

Guo, Hui, Wang, Xueyan, Huang, Li, Jin, Xin, Yang, Zhenzhong, Zhou, Zhang, Hu, Hai, Zhang, Yu-Yang, Lu, Hongliang, Zhang, Qinghua, Shen, Chengmin, Lin, Xiao, Gu, Lin, Dai, Qing, Bao, Lihong, Du, Shixuan, Hofer, Werner, Pantelides, Sokrates T., and Gao, Hong-Jun

Abstract

Graphene on SiO2enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2has been produced. The insulating nature of the thick amorphous SiO2is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situfabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Published
2020
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6. Buckled Silicene Formation on Ir(111)

Author

Meng, Lei, primary, Wang, Yeliang, additional, Zhang, Lizhi, additional, Du, Shixuan, additional, Wu, Rongting, additional, Li, Linfei, additional, Zhang, Yi, additional, Li, Geng, additional, Zhou, Haitao, additional, Hofer, Werner A., additional, and Gao, Hong-Jun, additional

Published
2013
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7. Tuning Structural and Mechanical Properties of Two-Dimensional Molecular Crystals: The Roles of Carbon Side Chains

Author

Cun, Huanyao, primary, Wang, Yeliang, additional, Du, Shixuan, additional, Zhang, Lei, additional, Zhang, Lizhi, additional, Yang, Bing, additional, He, Xiaobo, additional, Wang, Yue, additional, Zhu, Xueyan, additional, Yuan, Quanzi, additional, Zhao, Ya-Pu, additional, Ouyang, Min, additional, Hofer, Werner A., additional, Pennycook, Stephen J., additional, and Gao, Hong-jun, additional

Published
2012
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10. Insulating SiO 2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication.

Author

Guo H, Wang X, Huang L, Jin X, Yang Z, Zhou Z, Hu H, Zhang YY, Lu H, Zhang Q, Shen C, Lin X, Gu L, Dai Q, Bao L, Du S, Hofer W, Pantelides ST, and Gao HJ

Abstract

Graphene on SiO 2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO 2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO 2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO 2 has been produced. The insulating nature of the thick amorphous SiO 2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Published
2020
Full Text
View/download PDF

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